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MOSFET (Metal Oxide) N-Channel Digi-Reel® 42m Ω @ 4.3A, 10V ±20V 340pF @ 20V 9nC @ 10V TO-236-3, SC-59, SOT-23-3
- Manufacturer: Vishay Siliconix
- NO: 880-SI2318CDS-T1-GE3
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 425
- Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 42m Ω @ 4.3A, 10V ±20V 340pF @ 20V 9nC @ 10V TO-236-3, SC-59, SOT-23-3 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 1.437803g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 42mOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.25W Ta 2.1W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 42m Ω @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 4.3A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5.6A |
| Drain to Source Breakdown Voltage | 40V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 1.2 V |
| Height | 1.12mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
SI2318CDS-T1-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 340pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.3A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.5.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 14 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI2318CDS-T1-GE3 Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 14 ns
a threshold voltage of 3V
SI2318CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix SI2318CDS-T1-GE3 applications of single MOSFETs transistors.
- Consumer Appliances
- AC-DC Power Supply
- Battery Protection Circuit
- Uninterruptible Power Supply
- Solar Inverter
- Lighting
- LCD/LED/ PDP TV Lighting
- Server power supplies
- DC/DC converters
- Motor drives and Uninterruptible Power Supplies
