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ContactIRLML6401TRPBF
IRLML6401TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLML6401TRPBF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 6002
- Description: IRLML6401TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 50mOhm |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4.3A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 11 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 4.3A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
| Rise Time | 32ns |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 210 ns |
| Turn-Off Delay Time | 250 ns |
| Continuous Drain Current (ID) | -4.3A |
| Threshold Voltage | -550mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -12V |
| Dual Supply Voltage | -12V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -550 mV |
| Height | 1.12mm |
| Length | 3.0226mm |
| Width | 1.397mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRLML6401TRPBF MOSFET Description
Advanced processing techniques are used in these P-Channel MOSFETs from International Rectifier to obtain exceptionally low on-resistance per silicon area. This feature gives the designer a very effective and dependable device for use in battery and load management, in addition to the quick switching speed and ruggedized device design that HEXFETB power MOSFETs are widely known for.
The regular SOT-23 packaging has been combined with a thermally improved big pad leadframe to create a HEXFET Power MOSFET with the lowest footprint available in the market. The Micro3M package is perfect for uses where printed circuit board space is at a premium. The Micro3 may readily fit into very small application contexts like portable electronics and PCMCIA cards thanks to its tiny profile (1.1mm). The best attainable thermal resistance and power dissipation are used.
IRLML6401TRPBF MOSFET Features
Halogen-Free
P-Channel MOSFET
Ultra-Low On-Resistance
1.8V Gate Rated
Fast Switching
Low Profile (<1.1mm)
Available in Tape and Reel
SOT-23 Footprint
Lead-Free
IRLML6401TRPBF MOSFET Applications
Synchronous Rectification Applications
UIS Rating System
Active Clamp Switch
Linear Switching Applications
Totem Pole Swithcing Circuits
Ground-Connected Loads
