DMG6968U-7

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 25m Ω @ 6.5A, 4.5V ±12V 151pF @ 10V 8.5nC @ 4.5V TO-236-3, SC-59, SOT-23-3


  • Manufacturer: Diodes Incorporated
  • NO: 233-DMG6968U-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 8541
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 25m Ω @ 6.5A, 4.5V ±12V 151pF @ 10V 8.5nC @ 4.5V TO-236-3, SC-59, SOT-23-3 (Kg)

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SPECIFICATIONS

Parameters
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 36mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 810mW
Turn On Delay Time 54 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 151pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 205 ns
Turn-Off Delay Time 613 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 500mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Nominal Vgs 500 mV
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg

DMG6968U-7 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 151pF @ 10V.The drain current is the maximum continuous current the device can conduct, and this device has 6.5A continuous drain current (ID).With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 613 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 54 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.500mV is the threshold voltage at which an electrical device activates any of its operations.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

DMG6968U-7 Features


a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 613 ns
a threshold voltage of 500mV

DMG6968U-7 Applications


There are a lot of Diodes Incorporated DMG6968U-7 applications of single MOSFETs transistors.

  • Motor Drives and Uninterruptible Power Supples
  • Micro Solar Inverter
  • DC-to-DC converters
  • Lighting
  • LCD/LED TV
  • AC-DC Power Supply
  • Lighting, Server, Telecom and UPS.
  • LCD/LED/ PDP TV Lighting
  • Power Management Functions
  • Solar Inverter

In Stock

Please send RFQ , we will respond immediately.