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ContactTP0610K-T1-E3
TP0610K-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi
- Manufacturer: Vishay Siliconix
- NO: 880-TP0610K-T1-E3
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5371
- Description: TP0610K-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 1.437803g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 10Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ESD PROTECTION, LOW THRESHOLD |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 20 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 350mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 350mW |
| Turn On Delay Time | 20 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 23pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 185mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 15V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | -185mA |
| Threshold Voltage | -3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -3 V |
| Height | 1.12mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
TP0610K-T1-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 23pF @ 25V.This device has a continuous drain current (ID) of [-185mA], which is its maximum continuous current.When VGS=-60V, and ID flows to VDS at -60VVDS, the drain-source breakdown voltage is -60V in this device.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
TP0610K-T1-E3 Features
a continuous drain current (ID) of -185mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 35 ns
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)
TP0610K-T1-E3 Applications
There are a lot of Vishay Siliconix TP0610K-T1-E3 applications of single MOSFETs transistors.
- DC-to-DC converters
- Consumer Appliances
- Solar Inverter
- Motor control
- Telecom 1 Sever Power Supplies
- Micro Solar Inverter
- LCD/LED TV
- Synchronous Rectification
- LCD/LED/ PDP TV Lighting
- Lighting
