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ContactNTS4409NT1G
NTS4409NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTS4409NT1G
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 5959
- Description: NTS4409NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 249MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 25V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 700mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 280mW Tj |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 280mW |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 350m Ω @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 700mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| Rise Time | 8.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.7V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 8.2 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 750mA |
| Threshold Voltage | 650mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 0.7A |
| Drain to Source Breakdown Voltage | 25V |
| Height | 900μm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTS4409NT1G Description
NTS4409NT1G belongs to the family of N-channel power MOSFETs provided by ON Semiconductor based on the advanced planar technology for fast switching and low RDS (on). It is characterized by ESD protection and high efficiency in extending battery life. On the basis of these features, it is well suited for a wide range of applications, including boost and buck converter, load switch, and battery protection.
NTS4409NT1G Features
Advanced planar technology
Fast switching
Low RDS (on)
High-efficiency extending battery life
Available in the SC-70/SOT-323 package
NTS4409NT1G Applications
Boost and buck converter
Load switch
Battery protection
