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MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 300m Ω @ 1A, 10V ±20V 135pF @ 15V 3nC @ 4.5V 30V TO-236-3, SC-59, SOT-23-3
- Manufacturer: ON Semiconductor
- NO: 598-NDS352AP
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1769
- Description: MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 300m Ω @ 1A, 10V ±20V 135pF @ 15V 3nC @ 4.5V 30V TO-236-3, SC-59, SOT-23-3 (Kg)
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| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 135pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 900mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| Rise Time | 16ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 900mA |
| Threshold Voltage | -800mV |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.9A |
| Drain to Source Breakdown Voltage | -30V |
| Dual Supply Voltage | -30V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -1.7 V |
| Height | 1.22mm |
| Width | 3.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 500mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -900mA |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 8 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
NDS352AP Description
The NDS352AP P-Channel logic level enhancement mode power field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
NDS352AP Features
Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability.
ROHS3 Compliant
Lead Free
No SVHC
No Radiation Hardening
NDS352AP Applications
Switching Application
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
