BSS306NH6327XTSA1

BSS306NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
NO: 376-BSS306NH6327XTSA1
Package: TO-236-3, SC-59, SOT-23-3
Datasheet:
Stock: 5604
Description: BSS306NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 5V
Rise Time	2.3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	8.3 ns
Continuous Drain Current (ID)	2.3A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.057Ohm
Drain to Source Breakdown Voltage	30V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-SOT23
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	500mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	4.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	57m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id	2V @ 11μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	275pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta