BSS119NH6327XTSA1

BSS119NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
NO: 376-BSS119NH6327XTSA1
Package: TO-236-3, SC-59, SOT-23-3
Datasheet:
Stock: 2167
Description: BSS119NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2002
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	2.7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id	2.3V @ 13μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	20.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C	190mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 10V
Rise Time	3.3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	18.8 ns
Turn-Off Delay Time	7 ns
Continuous Drain Current (ID)	190mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	6Ohm
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	2.9mm
Width	1.3mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free