Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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BSP89H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-bsp89h6327xtsa1-datasheets-3461.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 6.7mm | Lead Free | 4 | 10 Weeks | 250.212891mg | No SVHC | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 1.7W | 1 | FET General Purpose Power | 4 ns | 3.5ns | 18.4 ns | 15.9 ns | 360mA | 20V | 240V | 240V | SILICON | DRAIN | 1.4V | 1.8W Ta | 0.35A | 6Ohm | 240V | N-Channel | 140pF @ 25V | 1.4 V | 6 Ω @ 350mA, 10V | 1.8V @ 108μA | 350mA Ta | 6.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
BSP88H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsp88h6327xtsa1-datasheets-3413.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.5mm | Lead Free | 10 Weeks | 250.212891mg | 4 | Tin | Halogen Free | 1 | 1.8W | 1 | PG-SOT223-4 | 76pF | 3.6 ns | 3.5ns | 18.9 ns | 17.9 ns | 350mA | 20V | 240V | 240V | 1.8W Ta | 6Ohm | 240V | N-Channel | 95pF @ 25V | 6Ohm @ 350mA, 10V | 1.4V @ 108μA | 350mA Ta | 6.8nC @ 10V | 600 mΩ | 2.8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SI2306BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2306bdst1e3-datasheets-3482.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 47mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Power | 7 ns | 12ns | 12 ns | 14 ns | 3.16A | 20V | SILICON | 3V | 750mW Ta | 30V | N-Channel | 305pF @ 15V | 47m Ω @ 3.5A, 10V | 3V @ 250μA | 3.16A Ta | 4.5nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SI2343CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2343cdst1ge3-datasheets-3500.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 45MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 30 ns | 8 ns | 18 ns | 5.9A | 20V | SILICON | SWITCHING | 30V | -1.2V | 1.25W Ta 2.5W Tc | -30V | P-Channel | 590pF @ 15V | -1.2 V | 45m Ω @ 4.2A, 10V | 2.5V @ 250μA | 5.9A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BUK9Y40-55B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nexperiausainc-buk9y4055b115-datasheets-3504.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 12 Weeks | 4.535924g | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | SINGLE | GULL WING | 260 | 4 | 30 | 59W | 1 | 17 ns | 93ns | 72 ns | 35 ns | 26A | 15V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 59W Tc | 36 mJ | 55V | N-Channel | 1020pF @ 25V | 36m Ω @ 15A, 10V | 2V @ 1mA | 26A Tc | 11nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||
TSM2306CX RFG | Taiwan Semiconductor Corporation | $2.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2306cxrfg-datasheets-3515.pdf | TO-236-3, SC-59, SOT-23-3 | 20 Weeks | e3 | Tin (Sn) | 260 | 30 | 30V | 1.25W Ta | N-Channel | 555pF @ 15V | 57m Ω @ 3.5A, 10V | 3V @ 250μA | 3.5A Ta | 5.5nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOD444 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18 Weeks | 3 | yes | EAR99 | No | SINGLE | GULL WING | 3 | 2W | 1 | R-PSSO-G2 | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.1W Ta 20W Tc | 0.06Ohm | N-Channel | 540pF @ 30V | 60m Ω @ 12A, 10V | 3V @ 250μA | 4A Ta 12A Tc | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN13H750S-7 | Diodes Incorporated | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn13h750s7-datasheets-2827.pdf | TO-236-3, SC-59, SOT-23-3 | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1A | 130V | 770mW Ta | N-Channel | 231pF @ 25V | 750m Ω @ 2A, 10V | 4V @ 250μA | 1A Ta | 5.6nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4441 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/alphaomegasemiconductor-ao4441-datasheets-1987.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 18 Weeks | 8 | No | DUAL | GULL WING | 1 | 3.1W | 1 | Other Transistors | 150°C | 8 ns | 31.5 ns | -4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | -2.1V | 3.1W Ta | 4A | -60V | P-Channel | 1120pF @ 30V | 100m Ω @ 4A, 10V | 3V @ 250μA | 4A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
BUK9Y104-100B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9y104100b115-datasheets-3572.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | Tin | No | e3 | NO | SINGLE | THROUGH-HOLE | 4 | 59W | 1 | 15 ns | 8ns | 6 ns | 36 ns | 14.8A | 15V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 59W Tc | MO-235 | 59A | 35 mJ | N-Channel | 1139pF @ 25V | 99m Ω @ 5A, 10V | 2.15V @ 1mA | 14.8A Tc | 11nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||
DMN10H120SE-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn10h120se13-datasheets-3401.pdf | TO-261-4, TO-261AA | 4 | 22 Weeks | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G4 | 3.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1.3W Ta | 16A | 0.11Ohm | N-Channel | 549pF @ 50V | 110m Ω @ 3.3A, 10V | 3V @ 250μA | 3.6A Ta | 10nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
FQT5P10TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fqt5p10tf-datasheets-3408.pdf&product=onsemiconductor-fqt5p10tf-6825992 | -100V | -1A | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.56mm | Lead Free | 4 | 24 Weeks | 188mg | No SVHC | 1.05Ohm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 2W | 1 | Other Transistors | R-PDSO-G4 | 9 ns | 70ns | 30 ns | 12 ns | 1mA | 30V | SILICON | DRAIN | SWITCHING | 100V | -4V | 2W Tc | 1A | 4A | 55 mJ | -100V | P-Channel | 250pF @ 25V | 1.05 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 8.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
FDT458P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdt458p-datasheets-3425.pdf | -30V | -3.4A | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.56mm | Lead Free | 4 | 8 Weeks | 188mg | No SVHC | 3 | ACTIVE (Last Updated: 11 hours ago) | yes | EAR99 | Tin | No | e3 | TIN | DUAL | GULL WING | 260 | 1 | Single | 30 | 3W | 1 | Other Transistors | 150°C | R-PDSO-G4 | 4.5 ns | 12.5ns | 2 ns | 11 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1.8V | 3W Ta | -30V | P-Channel | 205pF @ 15V | 130m Ω @ 3.4A, 10V | 3V @ 250μA | 3.4A Ta | 3.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
SI2323DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2323ddst1ge3-datasheets-3131.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 960mW | 1 | 150°C | 8 ns | 22ns | 11 ns | 58 ns | -4.1A | 8V | SILICON | SWITCHING | 20V | -1V | 960mW Ta 1.7W Tc | -20V | P-Channel | 1160pF @ 10V | 39m Ω @ 4.1A, 4.5V | 1V @ 250μA | 5.3A Tc | 36nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
DMP3013SFV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmp3013sfv7-datasheets-3077.pdf | 8-PowerVDFN | 22 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 940mW Ta | P-Channel | 1674pF @ 15V | 9.5m Ω @ 11.5A, 10V | 3V @ 250μA | 12A Ta 35A Tc | 33.7nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZXMN10A08E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zxmn10a08e6ta-datasheets-3188.pdf | 100V | 1.5A | SOT-23-6 | 3.1mm | 1.3mm | 1.8mm | Lead Free | 6 | 17 Weeks | 14.996898mg | No SVHC | 250mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 6 | 1 | Single | 1.7W | 1 | 3.4 ns | 2.2ns | 2.2 ns | 8 ns | 3.5A | 20V | SILICON | SWITCHING | 1.1W Ta | 100V | N-Channel | 405pF @ 50V | 250m Ω @ 3.2A, 10V | 4V @ 250μA | 1.5A Ta | 7.7nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSH108,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-bsh108215-datasheets-3177.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | 830mW | 1 | 1.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 830mW Tc | 0.14Ohm | N-Channel | 190pF @ 10V | 120m Ω @ 1A, 10V | 2V @ 1mA | 1.9A Tc | 10nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
CSD17313Q2 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd17313q2-datasheets-1913.pdf | 6-WDFN Exposed Pad | 2mm | 800μm | 2mm | Lead Free | 6 | 6 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | 750μm | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | CSD17313 | 8 | Single | 2.3W | 1 | FET General Purpose Powers | 2.8 ns | 3.9ns | 1.3 ns | 4.2 ns | 5A | 10V | SILICON | DRAIN | SWITCHING | 1.3V | 2.3W Ta | 5A | 20A | 0.042Ohm | 30V | N-Channel | 340pF @ 15V | 30m Ω @ 4A, 8V | 1.8V @ 250μA | 5A Tc | 2.7nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||
AOD413A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3 | 50W | 1 | Other Transistors | 12A | 20V | Single | 40V | 2.5W Ta 50W Tc | P-Channel | 1125pF @ 20V | 44m Ω @ 12A, 10V | 3V @ 250μA | 12A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOD454A | Alpha & Omega Semiconductor Inc. | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 20A | 40V | 2.5W Ta 37W Tc | N-Channel | 650pF @ 20V | 30m Ω @ 12A, 10V | 3V @ 250μA | 20A Tc | 10.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4449 | Alpha & Omega Semiconductor Inc. | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | EAR99 | DUAL | GULL WING | 8 | 1 | Other Transistors | Not Qualified | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.1W Ta | 7A | 0.034Ohm | 135 pF | P-Channel | 910pF @ 15V | 34m Ω @ 7A, 10V | 2.4V @ 250μA | 7A Ta | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMT5015LFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmt5015lfdf7-datasheets-3283.pdf | 6-UDFN Exposed Pad | 6 | 22 Weeks | 15mOhm | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N6 | 2.8 ns | 5.1ns | 2.7 ns | 10.6 ns | 9.1A | 16V | SILICON | DRAIN | SWITCHING | 820mW Ta | 50V | N-Channel | 902.7pF @ 25V | 15m Ω @ 8A, 10V | 2V @ 250μA | 9.1A Ta | 14nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
DMN1032UCB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn1032ucb47-datasheets-3304.pdf | 4-UFBGA, WLBGA | 4 | 34 Weeks | 4 | EAR99 | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 3.3 ns | 5.6ns | 9 ns | 24 ns | 4.8A | 8V | SILICON | SWITCHING | 900mW Ta | 0.038Ohm | 12V | N-Channel | 450pF @ 6V | 26m Ω @ 1A, 4.5V | 1.2V @ 250μA | 4.8A Ta | 4.5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
SI3442BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3442bdvt1e3-datasheets-3334.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 57mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 20mW | 1 | FET General Purpose Power | 35 ns | 50ns | 15 ns | 20 ns | 3A | 12V | SILICON | 1.8V | 860mW Ta | 3A | 20V | N-Channel | 295pF @ 10V | 1.8 V | 57m Ω @ 4A, 4.5V | 1.8V @ 250μA | 3A Ta | 5nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
SI2343DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2343dst1ge3-datasheets-3348.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 53mOhm | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | Other Transistors | Not Qualified | 10 ns | 15ns | 20 ns | 31 ns | -4A | 20V | SILICON | SWITCHING | 30V | -3V | 750mW Ta | -30V | P-Channel | 540pF @ 15V | -3 V | 53m Ω @ 4A, 10V | 3V @ 250μA | 3.1A Ta | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
FDC608PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdc608pz-datasheets-3370.pdf | -20V | -5.8A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 13 Weeks | 36mg | No SVHC | 30MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 1.6W | 1 | Other Transistors | 13 ns | 8ns | 8 ns | 91 ns | 5.8A | 12V | -20V | SILICON | 20V | -1V | 1.6W Ta | 20A | -20V | P-Channel | 1330pF @ 10V | -1 V | 30m Ω @ 5.8A, 4.5V | 1.5V @ 250μA | 5.8A Ta | 23nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
PMV213SN,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-pmv213sn215-datasheets-2918.pdf | TO-236-3, SC-59, SOT-23-3 | 3.05mm | 3 | 4 Weeks | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 30 | 2W | 1 | 1.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 280mW Tj | 0.25Ohm | N-Channel | 330pF @ 20V | 250m Ω @ 500mA, 10V | 4V @ 1mA | 1.9A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
PCP1302-TD-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-pcp1302tdh-datasheets-2887.pdf | TO-243AA | Lead Free | 3 | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | SINGLE | FLAT | 1 | Other Transistors | R-PSSO-F3 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.5W Tc | 3A | 0.266Ohm | P-Channel | 262pF @ 20V | 266m Ω @ 1.5A, 10V | 2.6V @ 1mA | 3A Ta | 6.4nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SI8472DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si8472dbt2e1-datasheets-2941.pdf | 4-UFBGA | Lead Free | 4 | 33 Weeks | 44MOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | Single | 1 | FET General Purpose Powers | S-PBGA-B4 | 4.5A | 8V | SILICON | SWITCHING | 780mW Ta | 20V | N-Channel | 630pF @ 10V | 44m Ω @ 1.5A, 4.5V | 900mV @ 250μA | 18nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
TSM2314CX RFG | Taiwan Semiconductor Corporation | $1.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2314cxrfg-datasheets-2965.pdf | TO-236-3, SC-59, SOT-23-3 | 28 Weeks | SOT-23 | 20V | 1.25W Ta | N-Channel | 900pF @ 10V | 33mOhm @ 4.9A, 4.5V | 1.2V @ 250μA | 4.9A Tc | 11nC @ 4.5V | 1.8V 4.5V | ±12V |
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