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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFHS9301TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfhs9301trpbf-datasheets-3985.pdf | 6-PowerVDFN | 2.1mm | 950μm | 2.1mm | Lead Free | 6 | 12 Weeks | No SVHC | 37MOhm | 6 | EAR99 | No | DUAL | Single | 2.1W | 1 | 12 ns | 80ns | 25 ns | 13 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1.8V | 2.1W Ta | 6A | 52A | -30V | P-Channel | 580pF @ 25V | -1.8 V | 37m Ω @ 7.8A, 10V | 2.4V @ 25μA | 6A Ta 13A Tc | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NVTFS5C478NLWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nvtfs5c478nlwftag-datasheets-4770.pdf | 8-PowerWDFN | 5 | 18 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 20W Tc | 104A | 0.025Ohm | 43 mJ | N-Channel | 400pF @ 25V | 14m Ω @ 5A, 10V | 2.2V @ 20μA | 26A Tc | 3.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI2328DS-T1-GE3 | Vishay Siliconix | $2.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2328dst1ge3-datasheets-5062.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 730mW | 1 | FET General Purpose Powers | 7 ns | 11ns | 10 ns | 9 ns | 1.15A | 20V | SILICON | 100V | 4V | 730mW Ta | 0.25Ohm | N-Channel | 250m Ω @ 1.5A, 10V | 4V @ 250μA | 1.15A Ta | 5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPN50R650CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn50r650ceatma1-datasheets-5065.pdf | SOT-223-3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 9A | 500V | 3V | 5W Tc | N-Channel | 342pF @ 100V | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 9A Tc | 15nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC7678 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc7678-datasheets-4754.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 23 Weeks | 180mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 31W | 1 | FET General Purpose Power | S-PDSO-N5 | 10 ns | 4ns | 3 ns | 26 ns | 17.5A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 2.3W Ta 31W Tc | MO-240BA | 70A | 0.0053Ohm | 54 mJ | 30V | N-Channel | 2410pF @ 15V | 5.3m Ω @ 17.5A, 10V | 3V @ 250μA | 17.5A Ta 19.5A Tc | 39nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| ZXMN6A07ZTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zxmn6a07zta-datasheets-4565.pdf | 60V | 1.2A | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 17 Weeks | 130.492855mg | No SVHC | 250mOhm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 3 | 1 | Single | 40 | 2.6W | 1 | FET General Purpose Power | 1.8 ns | 1.4ns | 2 ns | 4.9 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 60V | N-Channel | 166pF @ 40V | 250m Ω @ 1.8A, 10V | 3V @ 250μA | 1.9A Ta | 3.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIA445EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia445edjt1ge3-datasheets-4626.pdf | PowerPAK® SC-70-6 | 2.05mm | 800μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 16.5mOhm | 6 | EAR99 | No | DUAL | 1 | Single | 3.5W | 1 | 150°C | S-PDSO-N3 | 25 ns | 55 ns | -11.8A | 12V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 3.5W Ta 19W Tc | 50A | -20V | P-Channel | 2130pF @ 10V | 16.5m Ω @ 7A, 4.5V | 1.2V @ 250μA | 12A Tc | 72nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| NVTFS5124PLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvtfs5124pltag-datasheets-4840.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | NOT SPECIFIED | 8 | Single | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-F5 | 7 ns | 14ns | 10 ns | 13 ns | 2.4A | 20V | SILICON | DRAIN | 60V | 60V | 3W Ta 18W Tc | 6A | 24A | P-Channel | 250pF @ 25V | 260m Ω @ 3A, 10V | 2.5V @ 250μA | 2.4A Ta | 6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TSM950N10CW RPG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-261-4, TO-261AA | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 9W Tc | N-Channel | 1480pF @ 50V | 95m Ω @ 5A, 10V | 2.5V @ 250μA | 6.5A Tc | 9.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD7N20TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdd7n20tm-datasheets-4886.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | No SVHC | 690mOhm | 3 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 43W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 30ns | 10 ns | 13 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 5V | 43W Tc | TO-252AA | 5A | 62.5 mJ | 200V | N-Channel | 250pF @ 25V | 690m Ω @ 2.5A, 10V | 5V @ 250μA | 5A Tc | 6.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| NVTFS5C466NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvtfs5c466nltag-datasheets-4882.pdf | 8-PowerWDFN | 5 | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 38W Tc | 14A | 214A | 0.012Ohm | 72 mJ | N-Channel | 880pF @ 25V | 7.3m Ω @ 10A, 10V | 2.2V @ 250μA | 51A Tc | 7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RQ6P015SPTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rq6p015sptr-datasheets-4925.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 20 Weeks | No SVHC | 350mOhm | 6 | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 1.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | -2.5V | 600mW Ta | P-Channel | 950pF @ 25V | 470m Ω @ 1.5A, 10V | 2.5V @ 1mA | 1.5A Ta | 322nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD3055L104T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-ntd3055l104t4g-datasheets-4707.pdf | 60V | 12A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 8 Weeks | No SVHC | 104MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 40 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.2 ns | 104ns | 40.5 ns | 19 ns | 12A | 15V | SILICON | DRAIN | SWITCHING | 1.6V | 1.5W Ta 48W Tj | 45A | 60V | N-Channel | 440pF @ 25V | 1.6 V | 104m Ω @ 6A, 5V | 2V @ 250μA | 12A Ta | 20nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||
| IRF8721TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf8721trpbf-datasheets-4711.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 8.5MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 2.5W | 1 | FET General Purpose Power | 8.2 ns | 11ns | 7 ns | 8.1 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 30V | N-Channel | 1040pF @ 15V | 2.35 V | 8.5m Ω @ 14A, 10V | 2.35V @ 25μA | 14A Ta | 12nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTF5P03T3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntf5p03t3g-datasheets-4721.pdf | -30V | -5.2A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 15 Weeks | No SVHC | 100MOhm | 4 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | Single | 40 | 3.13W | 1 | Other Transistors | 16 ns | 45ns | 24 ns | 23 ns | 5A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1.75V | 1.56W Ta | 3.7A | 250 mJ | -30V | P-Channel | 950pF @ 25V | 100m Ω @ 5.2A, 10V | 3V @ 250μA | 3.7A Ta | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| DMPH6050SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmph6050sk313-datasheets-4702.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 23.6A | 60V | 1.9W Ta | P-Channel | 1377pF @ 30V | 50m Ω @ 7A, 10V | 3V @ 250μA | 7.2A Ta 23.6A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP6180SK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp6180sk3q13-datasheets-4736.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 2.7W Ta | P-Channel | 984.7pF @ 30V | 110m Ω @ 12A, 10V | 2.7V @ 250μA | 14A Tc | 17.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDT86246L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdt86246l-datasheets-4759.pdf | TO-261-4, TO-261AA | 4 Weeks | 250.2mg | ACTIVE (Last Updated: 13 hours ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 2A | 150V | 1W Ta | N-Channel | 335pF @ 75V | 228m Ω @ 2A, 10V | 2.5V @ 250μA | 2A Ta | 6.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP6050SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp6050sfg13-datasheets-4599.pdf | 8-PowerVDFN | 5 | 23 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N5 | 4.8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.1W Ta | 32A | 0.05Ohm | P-Channel | 1293pF @ 30V | 50m Ω @ 5A, 10V | 3V @ 250μA | 4.8A Ta | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M24-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m2460ex-datasheets-4521.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 55W Tc | 127A | 0.024Ohm | 23.9 mJ | N-Channel | 1469pF @ 25V | 21m Ω @ 10A, 10V | 2.1V @ 1mA | 32A Tc | 12.4nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH625DN-T1-GE3 | Vishay Siliconix | $0.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish625dnt1ge3-datasheets-4498.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.7W Ta 52W Tc | P-Channel | 4427pF @ 15V | 7mOhm @ 15A, 10V | 2.5V @ 250μA | 17.3A Ta 35A Tc | 126nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC8878 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdc8878-datasheets-3862.pdf | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 13 Weeks | 36mg | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 800mW | 1 | FET General Purpose Power | 6 ns | 2ns | 2 ns | 17 ns | 8A | 20V | 1.6W Ta | 8A | 30V | N-Channel | 1040pF @ 15V | 16m Ω @ 8A, 10V | 3V @ 250μA | 8A Ta 8A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSS159NH6906XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-bss159nh6906xtsa1-datasheets-4630.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 10 Weeks | 3 | EAR99 | 8541.21.00.95 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.9ns | 230mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 5.9 pF | N-Channel | 44pF @ 25V | 3.5 Ω @ 160mA, 10V | 2.4V @ 26μA | 230mA Ta | 2.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4C13NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nttfs4c13ntag-datasheets-4647.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | DUAL | FLAT | 8 | 1 | Single | 1 | FET General Purpose Power | S-PDSO-F5 | 7.2A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 780mW Ta 21.5W Tc | 0.0094Ohm | N-Channel | 770pF @ 15V | 9.4m Ω @ 30A, 10V | 2.1V @ 250μA | 7.2A Ta | 7.8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIA446DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sia446djt1ge3-datasheets-4622.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | NOT SPECIFIED | SIA446 | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N3 | 5 ns | 13ns | 10 ns | 10 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 3.5V | 3.5W Ta 19W Tc | 2.5 mJ | 150V | N-Channel | 230pF @ 75V | 177m Ω @ 3A, 10V | 3.5V @ 250μA | 7.7A Tc | 8nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQD13N10LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqd13n10ltm-datasheets-4602.pdf | 100V | 10A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 2 | 4 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.5 ns | 220ns | 72 ns | 22 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 40W Tc | 40A | 0.2Ohm | 95 mJ | 100V | N-Channel | 520pF @ 25V | 180m Ω @ 5A, 10V | 2V @ 250μA | 10A Tc | 12nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSC080N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc080n03lsgatma1-datasheets-4651.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 35W | 1 | Not Qualified | R-PDSO-F5 | 2.8ns | 14A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 35W Tc | N-Channel | 1700pF @ 15V | 8m Ω @ 30A, 10V | 2.2V @ 250μA | 14A Ta 53A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN025-80YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-psmn02580ylx-datasheets-4692.pdf | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G4 | 37A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 95W Tc | MO-235 | 150A | 0.027Ohm | 45.4 mJ | N-Channel | 2703pF @ 25V | 25m Ω @ 10A, 10V | 2.1V @ 1mA | 37A Tc | 17.1nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSS126H6906XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss126h6906xtsa1-datasheets-4415.pdf | TO-236-3, SC-59, SOT-23-3 | 10 Weeks | 3 | SOT-23-3 | 6.1 ns | 9.7ns | 115 ns | 14 ns | 21mA | 20V | 600V | 500mW Ta | 280Ohm | N-Channel | 28pF @ 25V | 500Ohm @ 16mA, 10V | 1.6V @ 8μA | 21mA Ta | 2.1nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN10H099SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn10h099sk313-datasheets-4441.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.172nF | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 5.4 ns | 5.9ns | 7.3 ns | 20 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 100V | 34W Tc | 20A | 0.08Ohm | 28.5 mJ | N-Channel | 1172pF @ 50V | 80m Ω @ 3.3A, 10V | 3V @ 250μA | 17A Tc | 25.2nC @ 10V | 6V 10V | ±20V |
