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ContactFDS6680A
FDS6680A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6680A
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2394
- Description: FDS6680A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9.5m Ω @ 12.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1620pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 5V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 12.5A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| Recovery Time | 28 ns |
| Nominal Vgs | 2 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 130mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 9.5MOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 12.5A |
| Number of Elements | 1 |
Description
The FDS6680A is a 30V N-channel logic level PowerTrench? MOSFET with a low gate charge and low on-state resistance for enhanced switching performance. The most recent medium voltage power MOSFETs are optimized power switches that combine a tiny gate charge (QG), a small reverse recovery charge (Qrr), and a soft reverse recovery body diode to provide quick switching for synchronous rectification in AC/DC power supplies. It makes use of a charge-balancing shielded-gate arrangement. The FOM (figure of merit (QGxRDS(ON)) of these devices is 66 percent lower than that of earlier generations because to this superior technology. Because it can minimize the undesired voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET can eliminate snubber circuits or replace higher voltage ratings - MOSFET requires circuit. This product is intended for general use and can be used in a variety of situations.
Features
? 12.5 A, 30 V RDS(ON) = 9.5 m? @ VGS = 10 V
RDS(ON) = 13 m? @ VGS = 4.5 V
? Exceptionally cheap gate charge
? Trench technique with high performance for exceptionally low RDS (ON)
? Capability to handle high power and current
? Extremely low RDS with high-performance trench technology (on)
Applications
? Switch the negative supply to the motor for reverse direction (low-side switching)
? Switch
? Auto intensity control
? Radio
? Passive element
