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FDD8778 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDD8778
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1973
- Description: FDD8778 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 14MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 25V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 35A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 39W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 39W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 14m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 845pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 22ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 35A |
| Threshold Voltage | 1.5V |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 25V |
| Avalanche Energy Rating (Eas) | 24 mJ |
| Nominal Vgs | 1.5 V |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDD8778 Description
This N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters usingeither synchronous orconventional switching PWMcontrollers. It has been optimized for low gate charge,low「DS(ony and fast switching speed.
FDD8778 Features
DC-DC for Desktop Computers and Servers
VRM for lntermediate Bus Architecture
FDD8778 Applications
Max rDs(on)= 14.0m at Vcs= 10V, Ip = 35A
Max rDs(on)= 21.0m at Vcs= 4.5V,ID= 33A
Low gate charge: og(ToT)= 12.6nC(Typ)，Vcs = 10V
Low gate resistance
RoHS compliant
