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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Supplier Device Package | Max Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Switching Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TN2106K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/microchiptechnology-tn2106k1g-datasheets-0026.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 950μm | 1.3mm | 3 | 5 Weeks | 1.437803g | 3 | EAR99 | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | FET General Purpose Power | 3 ns | 5ns | 5 ns | 6 ns | 280mA | 20V | SILICON | SWITCHING | 360mW Tc | 0.28A | 8 pF | 60V | N-Channel | 50pF @ 25V | 2.5 Ω @ 500mA, 10V | 2V @ 1mA | 280mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| 2N7002-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-2n7002g-datasheets-0033.pdf | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.12mm | 1.3mm | Lead Free | 3 | 14 Weeks | 1.437803g | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | FET General Purpose Power | 150°C | 20 ns | 20 ns | 115mA | 30V | SILICON | SWITCHING | 360mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tj | 5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SISS27ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siss27adnt1ge3-datasheets-9982.pdf | PowerPAK® 1212-8S | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 57W Tc | P-Channel | 4660pF @ 15V | 5.1m Ω @ 15A, 10V | 2.2V @ 250μA | 50A Tc | 55nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2203 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2203-datasheets-9996.pdf | Die | 14 Weeks | Die | 80V | N-Channel | 88pF @ 50V | 80mOhm @ 1A, 5V | 2.5V @ 600μA | 1.7A | 0.83nC @ 5V | 5V | +5.75V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP317PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsp317ph6327xtsa1-datasheets-9833.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.5mm | Lead Free | 4 | 10 Weeks | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.8W | 1 | 5.7 ns | 11.1ns | 67 ns | 254 ns | 430mA | 20V | -250V | SILICON | DRAIN | 250V | 1.8W Ta | 4Ohm | -250V | P-Channel | 262pF @ 25V | 4 Ω @ 430mA, 10V | 2V @ 370μA | 430mA Ta | 15.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSP129H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsp129h6327xtsa1-datasheets-9195.pdf | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.5mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | Tin | No | 35A | PG-SOT223-4 | e3 | 240V | Halogen Free | DUAL | GULL WING | 4 | 1 | Single | 1.7W | 1 | 150°C | 4.4 ns | 4.1ns | 35 ns | 22 ns | 120mA | 20V | 240V | 240V | SILICON | DRAIN | -2.1V | 1.8W Ta | 20Ohm | 240V | N-Channel | 108pF @ 25V | -1.4 V | 6 Ω @ 350mA, 10V | 1V @ 108μA | 350mA Ta | 5.7nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSP296NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsp296nh6327xtsa1-datasheets-9827.pdf | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.5mm | Lead Free | 4 | 10 Weeks | 250.212891mg | 4 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | PG-SOT223-4 | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1.8W | 1 | 150°C | 3.5 ns | 7.9ns | 21.4 ns | 18.4 ns | 1.2A | 20V | 100V | SILICON | DRAIN | 1.4V | 1.8W Ta | 0.6Ohm | 100V | N-Channel | 152.7pF @ 25V | 600m Ω @ 1.2A, 10V | 1.8V @ 100μA | 1.2A Ta | 6.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| DMP4015SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4015sps13-datasheets-9323.pdf | 8-PowerTDFN | 5.1mm | 1.1mm | 6mm | Lead Free | 5 | 14 Weeks | 95.991485mg | No SVHC | 8 | no | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 1 | Single | 2.1W | 1 | R-PDSO-F5 | 13.2 ns | 10ns | 137.9 ns | 302.7 ns | 8.5A | 25V | SILICON | DRAIN | SWITCHING | 40V | 40V | 1.3W Ta | P-Channel | 4234pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 8.5A Ta | 47.5nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| TN2404K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-tn2404kt1e3-datasheets-0731.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 3 | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 360mW | 1 | FET General Purpose Powers | 5 ns | 12ns | 16 ns | 35 ns | 200mA | 20V | SILICON | SWITCHING | 800mV | 360mW Ta | 0.2A | 4Ohm | 240V | N-Channel | 800 mV | 4 Ω @ 300mA, 10V | 2V @ 250μA | 200mA Ta | 8nC @ 10V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y12-55B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk7y1255b115-datasheets-9916.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 105W | 1 | 19.3 ns | 29.4ns | 22 ns | 43.2 ns | 61.8A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 105W Tc | MO-235 | N-Channel | 2067pF @ 25V | 12m Ω @ 20A, 10V | 4V @ 1mA | 61.8A Tc | 35.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BS107PSTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-bs107pstz-datasheets-9874.pdf | 200V | 120mA | E-Line-3 | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | EAR99 | HIGH RELIABILITY | Tin | e3 | BOTTOM | WIRE | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 500mW | 1 | O-PBCY-W3 | 7 ns | 8ns | 8 ns | 16 ns | 120mA | 20V | SILICON | 500mW Ta | 7 pF | 200V | N-Channel | 85pF @ 25V | 30 Ω @ 100mA, 5V | 120mA Ta | 2.6V 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDN86265P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdn86265p-datasheets-9899.pdf | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 940μm | 1.4mm | 3 | 8 Weeks | 30mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | 5.7 ns | 2.2ns | 9.9 ns | 7.9 ns | 800mA | 25V | SILICON | SWITCHING | 150V | 1.5W Ta | 0.8A | 5 pF | P-Channel | 210pF @ 75V | 1.2 Ω @ 800mA, 10V | 4V @ 250μA | 800mA Ta | 4.1nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| IRFL4105TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfl4105trpbf-datasheets-9952.pdf | 55V | 3.7A | TO-261-4, TO-261AA | 6.6802mm | 1.8mm | 3.7mm | Contains Lead, Lead Free | 4 | 12 Weeks | No SVHC | 45mOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | DUAL | GULL WING | 1 | Single | 2.1W | 1 | 150°C | R-PDSO-G4 | 7.1 ns | 12ns | 12 ns | 19 ns | 3.7A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 1W Ta | 82 ns | 55V | N-Channel | 660pF @ 25V | 4 V | 45m Ω @ 3.7A, 10V | 4V @ 250μA | 3.7A Ta | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI3437DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3437dvt1e3-datasheets-9963.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 750mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 2A | 14 ns | 29ns | 14 ns | 23 ns | 1.1A | 20V | -150V | SILICON | 150V | -4V | 2W Ta 3.2W Tc | 5A | P-Channel | 510pF @ 50V | -4 V | 750m Ω @ 1.4A, 10V | 4V @ 250μA | 1.4A Tc | 19nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTD24N06LT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntd24n06lt4g-datasheets-9912.pdf | 60V | 24A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 9 Weeks | No SVHC | 36mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 62.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.4 ns | 97ns | 52 ns | 23 ns | 24A | 15V | SILICON | DRAIN | SWITCHING | 1.36W Ta 62.5W Tj | 72A | 60V | N-Channel | 1140pF @ 25V | 1.7 V | 45m Ω @ 10A, 5V | 2V @ 250μA | 24A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||
| CSD19538Q3AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Lead Free | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 800μm | AVALANCHE RATED | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | CSD19538 | Single | NOT SPECIFIED | 1 | 15A | SILICON | DRAIN | SWITCHING | 100V | 100V | 3.2V | 2.8W Ta 23W Tc | 4.9A | 37A | 0.072Ohm | 16.4 pF | N-Channel | 454pF @ 50V | 59m Ω @ 5A, 10V | 3.8V @ 250μA | 15A Ta | 4.3nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR220NTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr220ntrpbf-datasheets-9596.pdf | 200V | 5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 600MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 43W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 6.4 ns | 11ns | 12 ns | 20 ns | 5A | 20V | 200V | SILICON | DRAIN | SWITCHING | 5A | 4V | 43W Tc | TO-252AA | 140 ns | 5A | 20A | 46 mJ | 200V | N-Channel | 300pF @ 25V | 4 V | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 5A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| FDC3512 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdc3512-datasheets-9588.pdf | 80V | 3A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 5 Weeks | 36mg | No SVHC | 77MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | 8541.29.00.95 | e3 | DUAL | GULL WING | Single | 1.6W | 1 | FET General Purpose Power | 7 ns | 3ns | 3 ns | 24 ns | 3A | 20V | SILICON | SWITCHING | 2.4V | 1.6W Ta | 3A | 80V | N-Channel | 634pF @ 40V | 2.4 V | 77m Ω @ 3A, 10V | 4V @ 250μA | 3A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIS407ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis407adnt1ge3-datasheets-9675.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | e3 | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.7W | 1 | 150°C | R-PDSO-F5 | 12 ns | 4ns | 36 ns | 120 ns | -16.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1V | 3.7W Ta 39.1W Tc | 0.009Ohm | -20V | P-Channel | 5875pF @ 10V | 9m Ω @ 15A, 4.5V | 1V @ 250μA | 18A Tc | 168nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7465TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf7465trpbf-datasheets-9607.pdf | 150V | 1.9A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 280mOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | 7 ns | 1.2ns | 9 ns | 10 ns | 1.9A | 30V | 150V | SILICON | SWITCHING | 5.5V | 2.5W Ta | 150V | N-Channel | 330pF @ 25V | 5.5 V | 280m Ω @ 1.14A, 10V | 5.5V @ 250μA | 1.9A Ta | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| BSP297H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsp297h6327xtsa1-datasheets-9687.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 6.7mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 66A | e3 | Tin (Sn) | 200V | Halogen Free | DUAL | GULL WING | 4 | Single | 1.8W | 1 | 5.2 ns | 3.8ns | 19 ns | 49 ns | 600mA | 20V | 200V | 200V | SILICON | DRAIN | 1.4V | 1.8W Ta | 200V | N-Channel | 357pF @ 25V | 1.4 V | 1.8 Ω @ 660mA, 10V | 1.8V @ 400μA | 660mA Ta | 16.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTHS4101PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nths4101pt1g-datasheets-9694.pdf | -20V | -4.8A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 9 Weeks | No SVHC | 21MOhm | 8 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 8 ns | 28ns | 28 ns | 75 ns | -4.8A | 8V | SILICON | SWITCHING | 20V | -1.5V | 1.3W Ta | -20V | P-Channel | 2100pF @ 16V | -1.5 V | 34m Ω @ 4.8A, 4.5V | 1.5V @ 250μA | 4.8A Tj | 35nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI3460BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-si3460bdvt1e3-datasheets-9746.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 27mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | FET General Purpose Power | 2A | 5 ns | 15ns | 5 ns | 25 ns | 8A | 8V | 20V | SILICON | SWITCHING | 1V | 2W Ta 3.5W Tc | 8A | 20A | N-Channel | 860pF @ 10V | 1 V | 27m Ω @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 24nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SI3458BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si3458bdvt1e3-datasheets-9757.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 5 ns | 12ns | 10 ns | 18 ns | 4.1A | 20V | SILICON | SWITCHING | 3V | 2W Ta 3.3W Tc | 3.2A | 60V | N-Channel | 350pF @ 30V | 3 V | 100m Ω @ 3.2A, 10V | 3V @ 250μA | 4.1A Tc | 11nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDS86242 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fds86242-datasheets-9750.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.75mm | 5mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 1 | Single | 2.5W | 1 | FET General Purpose Power | 150°C | 7.9 ns | 10ns | 10 ns | 13 ns | 4.1A | 20V | SILICON | SWITCHING | 2V | 2.5W Ta 5W Tc | 0.067Ohm | 5 pF | 150V | N-Channel | 760pF @ 75V | 3.5 V | 67m Ω @ 4.1A, 10V | 4V @ 250μA | 4.1A Ta | 13nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| ZVN4424GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvn4424gta-datasheets-9526.pdf | 240V | 500mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 16 Weeks | 7.994566mg | No SVHC | 5.5Ohm | no | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2.5W | 1 | R-PDSO-G4 | 2.5 ns | 5ns | 16 ns | 40 ns | 500mA | 40V | SILICON | DRAIN | SWITCHING | 2.5W Ta | 0.5A | 240V | N-Channel | 200pF @ 25V | 5.5 Ω @ 500mA, 10V | 1.8V @ 1mA | 500mA Ta | 2.5V 10V | ±40V | ||||||||||||||||||||||||||||||||||||||
| FDT457N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdt457n-datasheets-9739.pdf | 30V | 5A | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.56mm | Lead Free | 4 | 18 Weeks | 250.2mg | No SVHC | 60mOhm | 4 | ACTIVE (Last Updated: 10 hours ago) | yes | EAR99 | No | e3 | TIN | DUAL | GULL WING | 260 | 1 | Single | 30 | 3W | 1 | FET General Purpose Power | 150°C | 5 ns | 12ns | 3 ns | 12 ns | 5A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 3W Ta | 5A | 30V | N-Channel | 235pF @ 15V | 60m Ω @ 5A, 10V | 3V @ 250μA | 5A Ta | 5.9nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPZ40N04S58R4ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipz40n04s58r4atma1-datasheets-9732.pdf | 8-PowerTDFN | Contains Lead | 3 | 16 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N3 | 40A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 34W Tc | 160A | 0.0099Ohm | 24 mJ | N-Channel | 771pF @ 25V | 8.4m Ω @ 20A, 10V | 3.4V @ 10μA | 40A Tc | 13.7nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3017SFGQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp3017sfgq7-datasheets-9468.pdf | 8-PowerVDFN | 850μm | 15 Weeks | 8 | EAR99 | POWERDI3333-8 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | 940mW | 150°C | 7.5 ns | 45.6 ns | -11.5A | 25V | 30V | 940mW Ta | -30V | P-Channel | 2246pF @ 15V | 10m Ω @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta | 41nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR9343TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr9343trpbf-datasheets-9482.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 93MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 79W | 1 | R-PSSO-G2 | 9.5 ns | 24ns | 9.5 ns | 21 ns | -20A | 20V | SILICON | DRAIN | AMPLIFIER | 55V | 79W Tc | TO-252AA | 60A | -55V | P-Channel | 660pF @ 50V | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 20A Tc | 47nC @ 10V | 4.5V 10V | ±20V |
