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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2N7000BU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-2n7002-datasheets-6168.pdf&product=onsemiconductor-2n7000bu-6827960 | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 11 Weeks | No SVHC | 5Ohm | 3 | EAR99 | Copper, Silver, Tin | e3 | Tin (Sn) | 2N7000 | Single | 400mW | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 10 ns | 200mA | 30V | 3.9V | 400mW Ta | 0.2A | 60V | N-Channel | 50pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R190C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r190c6atma1-datasheets-1817.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 151W Tc | 20.2A | 59A | 0.19Ohm | 418 mJ | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf540nstrlpbf-datasheets-8721.pdf&product=infineontechnologies-irf540nlpbf-6827963 | 100V | 33A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 44MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 130W | 1 | FET General Purpose Power | 11 ns | 35ns | 35 ns | 39 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 130W Tc | 100V | N-Channel | 1960pF @ 25V | 4 V | 44m Ω @ 16A, 10V | 4V @ 250μA | 33A Tc | 71nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQP19N20C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp19n20c-datasheets-1841.pdf&product=onsemiconductor-fqp19n20c-6827965 | 200V | 19A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 170mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 139W | 1 | FET General Purpose Power | 15 ns | 150ns | 115 ns | 135 ns | 19A | 30V | SILICON | SWITCHING | 4V | 139W Tc | TO-220AB | 76A | 200V | N-Channel | 1080pF @ 25V | 170m Ω @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF9620PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irf9620pbf-datasheets-1688.pdf | -200V | -3.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 40W | 1 | TO-220AB | 350pF | 15 ns | 25ns | 15 ns | 20 ns | -3.5A | 20V | 200V | -4V | 40W Tc | 450 ns | 1.5Ohm | -200V | P-Channel | 350pF @ 25V | -4 V | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 3.5A Tc | 22nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF1010EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf1010epbf-datasheets-1714.pdf | 60V | 84A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 12mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Tin | No | Single | 170W | 1 | FET General Purpose Power | 12 ns | 78ns | 53 ns | 48 ns | 84A | 20V | 60V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-220AB | 75A | 60V | N-Channel | 3210pF @ 25V | 4 V | 12m Ω @ 50A, 10V | 4V @ 250μA | 84A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF6215PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf6215pbf-datasheets-1723.pdf | -150V | -13A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 14 Weeks | No SVHC | 290mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 110W | 1 | Other Transistors | 14 ns | 36ns | 37 ns | 53 ns | -13A | 20V | -150V | SILICON | DRAIN | SWITCHING | 150V | -4V | 110W Tc | TO-220AB | 240 ns | 44A | -150V | P-Channel | 860pF @ 25V | -4 V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STF2HNK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq2hnk60zrap-datasheets-8947.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.8Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STF2HN | 3 | Single | 20W | 1 | FET General Purpose Power | 10 ns | 30ns | 50 ns | 13 ns | 1A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 20W Tc | TO-220AB | 2A | 8A | 600V | N-Channel | 280pF @ 25V | 4.8 Ω @ 1A, 10V | 4.5V @ 50μA | 2A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRLB8743PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlb8743pbf-datasheets-1738.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 8.7MOhm | 3 | EAR99 | No | Single | 140W | 1 | 23 ns | 92ns | 36 ns | 25 ns | 150A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.8V | 140W Tc | TO-220AB | 44 ns | 78A | 620A | 30V | N-Channel | 5110pF @ 15V | 1.8 V | 3.2m Ω @ 40A, 10V | 2.35V @ 100μA | 78A Tc | 54nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STP4NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp4nk60z-datasheets-1747.pdf | 600V | 4A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP4N | 3 | Single | 70W | 1 | FET General Purpose Power | 12 ns | 9.5ns | 16.5 ns | 29 ns | 4A | 30V | 600V | SILICON | SWITCHING | 3.75V | 70W Tc | TO-220AB | 4A | 600V | N-Channel | 510pF @ 25V | 3.75 V | 2 Ω @ 2A, 10V | 4.5V @ 50μA | 4A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFS3306TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfb3306pbf-datasheets-3047.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 12 Weeks | No SVHC | 3 | No | Single | 230W | 1 | D2PAK | 4.52nF | 15 ns | 46ns | 77 ns | 40 ns | 120A | 20V | 60V | 4V | 230W Tc | 4.2mOhm | 60V | N-Channel | 4520pF @ 50V | 4 V | 4.2mOhm @ 75A, 10V | 4V @ 150μA | 120A Tc | 120nC @ 10V | 4.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLIZ44NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irliz44npbf-datasheets-1764.pdf | 55V | 30A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 25mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | NOT SPECIFIED | Single | NOT SPECIFIED | 38W | 1 | FET General Purpose Power | Not Qualified | 2kV | 11 ns | 84ns | 15 ns | 26 ns | 30A | 16V | 55V | SILICON | ISOLATED | SWITCHING | 2V | 45W Tc | TO-220AB | 120 ns | 28A | 55V | N-Channel | 1700pF @ 25V | 2 V | 22m Ω @ 17A, 10V | 2V @ 250μA | 30A Tc | 48nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRF1010EZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1010ezpbf-datasheets-1778.pdf | 60V | 75A | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 8.5MOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | Single | 140W | 1 | FET General Purpose Power | 19 ns | 90ns | 54 ns | 38 ns | 75A | 20V | 60V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | TO-220AB | 99 mJ | 60V | N-Channel | 2810pF @ 25V | 4 V | 8.5m Ω @ 51A, 10V | 4V @ 100μA | 75A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRL2203NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irl2203npbf-datasheets-1788.pdf | 30V | 116A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 7MOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 130W | 1 | FET General Purpose Power | 11 ns | 160ns | 66 ns | 23 ns | 116A | 16V | 30V | SILICON | DRAIN | SWITCHING | 1V | 180W Tc | TO-220AB | 84 ns | 75A | 400A | 290 mJ | 30V | N-Channel | 3290pF @ 25V | 1 V | 7m Ω @ 60A, 10V | 1V @ 250μA | 116A Tc | 60nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IAUA200N04S5N010AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaua200n04s5n010auma1-datasheets-1645.pdf | 5-PowerSFN | 39 Weeks | 40V | 167W Tc | N-Channel | 7650pF @ 25V | 1m Ω @ 100A, 10V | 3.4V @ 100μA | 200A Tc | 132nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC036NE7NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-bsc036ne7ns3gatma1-datasheets-1649.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | R-PDSO-F5 | 14 ns | 18ns | 10 ns | 38 ns | 20A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 156W Tc | 400A | 0.0036Ohm | 260 mJ | N-Channel | 4400pF @ 37.5V | 3.6m Ω @ 50A, 10V | 3.8V @ 110μA | 100A Tc | 63.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQP3P50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fqp3p50-datasheets-1677.pdf | -500V | -2.7A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 8 Weeks | 1.8g | No SVHC | 4.9Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 85W | 1 | Other Transistors | 12 ns | 56ns | 45 ns | 35 ns | 2.7A | 30V | -500V | SILICON | SWITCHING | 500V | 85W Tc | TO-220AB | 250 mJ | -500V | P-Channel | 660pF @ 25V | -5 V | 4.9 Ω @ 1.35A, 10V | 5V @ 250μA | 2.7A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| NVMFS6H818NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-nvmfs6h818nwft1g-datasheets-1474.pdf | 8-PowerTDFN, 5 Leads | 5 | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 3.8W Ta 136W Tc | 20A | 900A | 0.0037Ohm | 731 mJ | N-Channel | 3100pF @ 40V | 3.7m Ω @ 20A, 10V | 4V @ 190μA | 20A Ta 123A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF6N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf6n60m2-datasheets-1503.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STF6N | 1 | Single | 20W | 9.5 ns | 7.4ns | 22.5 ns | 24 ns | 4.5A | 25V | 20W Tc | 600V | N-Channel | 232pF @ 100V | 1.2 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Ta | 8nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB6NK90ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb6nk90zt4-datasheets-1507.pdf | 900V | 5.8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | 4.535924g | No SVHC | 1.56Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB6N | 3 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 45ns | 20 ns | 20 ns | 5.8A | 30V | SILICON | SWITCHING | 3.75V | 140W Tc | 900V | N-Channel | 1350pF @ 25V | 3.75 V | 2 Ω @ 2.9A, 10V | 4.5V @ 100μA | 5.8A Tc | 60.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| NVMFS5C460NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-nvmfs5c460nlaft1g-datasheets-0895.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.6W Ta 50W Tc | N-Channel | 1300pF @ 25V | 4.5m Ω @ 35A, 10V | 2V @ 250μA | 21A Ta 78A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2805STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf2805strlpbf-datasheets-1477.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | 4.7Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 120ns | 110 ns | 68 ns | 135A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 75A | 700A | 55V | N-Channel | 5110pF @ 25V | 4.7m Ω @ 104A, 10V | 4V @ 250μA | 135A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIR826DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir826dpt1ge3-datasheets-1559.pdf | PowerPAK® SO-8 | Lead Free | 14 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 6.25W | 1 | PowerPAK® SO-8 | 2.9nF | 15 ns | 14ns | 8 ns | 36 ns | 60A | 20V | 80V | 1.2V | 6.25W Ta 104W Tc | 4mOhm | N-Channel | 2900pF @ 40V | 4.8mOhm @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 90nC @ 10V | 4.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf730pbf-datasheets-1564.pdf | 400V | 5.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 1Ohm | 3 | No | 55A | 400V | 1 | Single | 74W | 1 | TO-220AB | 700pF | 10 ns | 15ns | 14 ns | 38 ns | 5.5A | 20V | 400V | 4V | 74W Tc | 530 ns | 1Ohm | 400V | N-Channel | 700pF @ 25V | 4 V | 1Ohm @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STP7N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp7n60m2-datasheets-1572.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 950mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP7N | 1 | Single | 1 | 7.6 ns | 7.2ns | 15.9 ns | 19.3 ns | 5A | 25V | SILICON | DRAIN | SWITCHING | 3V | 60W Tc | TO-220AB | 5A | 20A | 99 mJ | 600V | N-Channel | 271pF @ 100V | 950m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 8.8nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz44nlpbf-datasheets-1585.pdf | 55V | 49A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 17.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | 12 ns | 60ns | 45 ns | 44 ns | 49A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 94W Tc | 55V | N-Channel | 1470pF @ 25V | 4 V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| MTP3055VL | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-mtp3055vl-datasheets-1601.pdf | 60V | 12A | TO-220-3 | 10.67mm | 20.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 180mOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 48W | 1 | FET General Purpose Powers | Not Qualified | 175°C | 9 ns | 190ns | 90 ns | 14 ns | 12A | 15V | SILICON | DRAIN | SWITCHING | 1V | 48W Tc | TO-220AB | 42A | 72 mJ | 60V | N-Channel | 570pF @ 25V | 15 V | 180m Ω @ 6A, 5V | 2V @ 250μA | 12A Tc | 10nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||
| PSMN7R0-100BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn7r0100bs118-datasheets-1354.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 269W | 1 | R-PSSO-G2 | 34.6 ns | 45.6ns | 49.5 ns | 103.9 ns | 100A | 4.3V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 269W Tc | 475A | 0.0068Ohm | 90V | N-Channel | 6686pF @ 50V | 6.8m Ω @ 15A, 10V | 4V @ 1mA | 100A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf830apbf-datasheets-1618.pdf | 500V | 5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 1.4Ohm | 3 | No | 5A | 500V | 1 | Single | 74W | 1 | TO-220AB | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 4.5V | 74W Tc | 650 ns | 1.4Ohm | 500V | N-Channel | 620pF @ 25V | 4.5 V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFZ48VPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz48vpbf-datasheets-1637.pdf | 60V | 72A | TO-220-3 | 10.6426mm | 8.77mm | 4.82mm | Lead Free | 3 | 14 Weeks | No SVHC | 12MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | Single | 30 | 150W | 1 | FET General Purpose Power | 7.6 ns | 200ns | 166 ns | 157 ns | 72A | 20V | 60V | SILICON | DRAIN | SWITCHING | 4V | 150W Tc | TO-220AB | 100 ns | 290A | 60V | N-Channel | 1985pF @ 25V | 4 V | 12m Ω @ 43A, 10V | 4V @ 250μA | 72A Tc | 110nC @ 10V | 10V | ±20V |
