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ContactSTF13NM60ND
STF13NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STF13NM60ND
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 3034
- Description: STF13NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | FDmesh™ II |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STF13 |
| Number of Elements | 1 |
| Power Dissipation-Max | 25W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 25W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 46.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 380m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 845pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 24.5nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 15.4 ns |
| Turn-Off Delay Time | 9.6 ns |
| Continuous Drain Current (ID) | 11A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 44A |
| Height | 16.4mm |
| Length | 10.6mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
STF13NM60ND Description
STF13NM60ND Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology.
STF13NM60ND have extremely low on-resistance and improved switching performance thanks to a unique strip-layout vertical construction. Bridge topologies and ZVS phase-shift converters are suited for STF13NM60ND.
STF13NM60ND Features
The worldwide best RDS(on)* area among fast recovery diode devices
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
Extremely high dv/dt and avalanche capabilities
STF13NM60ND Applications
Switching applications
Dual-Channel LED Drivers, Bulb Drivers
Dual-Channel High-Side Switches for Sub-Modules
Dual-Channel High-Side Relay, Solenoid Drivers
