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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 1.3MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 366W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 366W |
| Case Connection | DRAIN |
| Turn On Delay Time | 32 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.3m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 14240pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 195A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 460nC @ 10V |
| Rise Time | 105ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 100 ns |
| Turn-Off Delay Time | 160 ns |
| Continuous Drain Current (ID) | 195A |
| Threshold Voltage | 2.2V |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Avalanche Energy Rating (Eas) | 722 mJ |
| Recovery Time | 52 ns |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.31mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRFP7430PBF is an N-channel power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 40V. The operating temperature of IRFP7430PBF is -55°C~175°C TJ and its maximum power dissipation are 366W. IRFP7430PBF has 3 pins and it is available in TO-247-3 packaging way. The FET Type of IRFP7430PBF is N-Channel and its resistance is 1.3MOhm.
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
RoHS Compliant, Halogen-Free*
Brushed Motor drive applications
BLDC Motor drive applications
Battery-powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Please send RFQ , we will respond immediately.