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FDP61N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDP61N20
- Package: TO-220-3
- Datasheet:
- Stock: 4923
- Description: FDP61N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | UniFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 41MOhm |
| Additional Feature | FAST SWITCHING |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 61A |
| Number of Elements | 1 |
| Voltage | 200V |
| Power Dissipation-Max | 417W Tc |
| Element Configuration | Single |
| Current | 61A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 417W |
| Turn On Delay Time | 40 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 41m Ω @ 30.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3380pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 61A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Rise Time | 215ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 125 ns |
| Continuous Drain Current (ID) | 6.1A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 200V |
| Height | 9.4mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDP61N20 Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDP61N20 Features
RDS(on) = 34 m? (Typ.) @ VGS = 10 V, ID = 30.5 A
Low Gate Charge (Typ. 58 nC)
Low Cross (Typ. 80 pF)
100% Avalanche Tested
FDP61N20 Applications
PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
