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IPB110N20N3LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPB110N20N3LFATMA1
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 1753
- Description: IPB110N20N3LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ 3 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 250W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 11m Ω @ 88A, 10V |
| Vgs(th) (Max) @ Id | 4.2V @ 260μA |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 88A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 11A |
| Drain-source On Resistance-Max | 0.011Ohm |
| Pulsed Drain Current-Max (IDM) | 352A |
| DS Breakdown Voltage-Min | 200V |
| Avalanche Energy Rating (Eas) | 560 mJ |
| RoHS Status | ROHS3 Compliant |
IPB110N20N3LFATMA1 Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout, yielding one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.
IPB110N20N3LFATMA1 Features
Ideal for hot-swap and-fuse applications
Verylowon-resistance(on)
WidesafeoperatingareaSOA
N-channel, normal level
100%avalanchetested
Pb-free plating;RoHS-compliant
QualifiedaccordingtoJEDEC1)for target applications
Halogen-freeaccordingtoIEC61249-2-21
IPB110N20N3LFATMA1 Applications
Switching applications
