FQA11N90C-F109

MOSFET (Metal Oxide) N-Channel Tube 1.1 Ω @ 5.5A, 10V ±30V 3290pF @ 25V 80nC @ 10V TO-3P-3, SC-65-3


  • Manufacturer: ON Semiconductor
  • NO: 598-FQA11N90C-F109
  • Package: TO-3P-3, SC-65-3
  • Datasheet: pdf
  • Stock: 5252
  • Description: MOSFET (Metal Oxide) N-Channel Tube 1.1 Ω @ 5.5A, 10V ±30V 3290pF @ 25V 80nC @ 10V TO-3P-3, SC-65-3 (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 17 hours ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series QFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 1.1Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 60 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 85 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 960 mJ
Height 18.9mm
Length 15.8mm
Width 5mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FQA11N90C-F109 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 960 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3290pF @ 25V is its maximum input capacitance.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=900V. And this device has 900V drain to source breakdown voltage.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 130 ns.A maximum pulsed drain current of 44A is the maximum peak drain current rated for this device.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 60 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.This device reduces its overall power consumption by using drive voltage (10V).

FQA11N90C-F109 Features


the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 44A.
a threshold voltage of 5V

FQA11N90C-F109 Applications


There are a lot of ON Semiconductor FQA11N90C-F109 applications of single MOSFETs transistors.

  • Industrial Power Supplies
  • Server power supplies
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • DC-to-DC converters
  • Motor Drives and Uninterruptible Power Supples
  • General Purpose Interfacing Switch
  • LCD/LED TV
  • Power Management Functions
  • DC/DC converters

In Stock

Please send RFQ , we will respond immediately.