Products
Manufacturer
RFQ
NEWS
ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CTLDM304P-M832DS TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | 2014 | /files/centralsemiconductorcorp-ctldm304pm832dstr-datasheets-7493.pdf | 8-TDFN Exposed Pad | 8 | 6 Weeks | EAR99 | compliant | 8541.29.00.95 | YES | NO LEAD | 2 | R-PDSO-N8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.65W | 4.2A | 0.07Ohm | 2 P-Channel (Dual) | 760pF @ 15V | 70m Ω @ 4.2A, 10V | 1.3V @ 250μA | 4.2A | 6.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS9953A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds9953a-datasheets-7549.pdf | -30V | -2.9A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 230.4mg | No SVHC | 130MOhm | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 4.5 ns | 13ns | 2 ns | 11 ns | 2.9mA | 25V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.8V | 900mW | 10A | -30V | 2 P-Channel (Dual) | 185pF @ 15V | 1.8 V | 130m Ω @ 1A, 10V | 3V @ 250μA | 2.9A | 3.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SIS990DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis990dnt1ge3-datasheets-7450.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | EAR99 | No | 25W | C BEND | 2 | Dual | 2 | FET General Purpose Powers | S-PDSO-C6 | 8 ns | 8ns | 6 ns | 8 ns | 12.1A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 0.085Ohm | 100V | 2 N-Channel (Dual) | 250pF @ 50V | 85m Ω @ 8A, 10V | 4V @ 250μA | 8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI7228DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7228dnt1ge3-datasheets-7581.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 13 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7228 | 8 | Dual | 30 | 2.6W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 10ns | 10 ns | 15 ns | 8.8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 35A | 30V | 2 N-Channel (Dual) | 480pF @ 15V | 20m Ω @ 8.8A, 10V | 2.5V @ 250μA | 26A | 13nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| FDS6892A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fds6892a-datasheets-7538.pdf | 20V | 7.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 18MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | Dual | 2W | 2 | FET General Purpose Power | 8 ns | 15ns | 9 ns | 26 ns | 7.5A | 12V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 900mV | 900mW | 30A | 20V | 2 N-Channel (Dual) | 1333pF @ 10V | 900 mV | 18m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI4532DY | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-si4532dy-datasheets-7598.pdf | 30V | 3.9A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 8 Weeks | 230.4mg | No SVHC | 65MOhm | 8 | ACTIVE (Last Updated: 16 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | DUAL | GULL WING | SI4532D | 2W | 2 | Other Transistors | 18 ns | 8ns | 6 ns | 18 ns | 3.9A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3V | 900mW | 30V | N and P-Channel | 235pF @ 10V | 3 V | 65m Ω @ 3.9A, 10V | 3V @ 250μA | 3.9A 3.5A | 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| FDS6898AZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6898az-datasheets-7629.pdf | 20V | 9.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 14MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ESD PROTECTED | Tin | e3 | 2W | GULL WING | NOT SPECIFIED | Dual | NOT SPECIFIED | 2W | 2 | FET General Purpose Power | Not Qualified | 10 ns | 15ns | 16 ns | 34 ns | 9.4A | 12V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 900mW | 20V | 2 N-Channel (Dual) | 1821pF @ 10V | 1 V | 14m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 23nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| AONY36354 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerSMD, Flat Leads | 18 Weeks | 30V | 3.1W Ta 21W Tc 3.1W Ta 31.5W Tc | 2 N-Channel (Dual) Asymmetrical | 820pF @ 15V 1890pF @ 15V | 5.3m Ω @ 20A, 10V, 2.6m Ω @ 20A, 10V | 2.1V @ 250μA, 1.9V @ 250μA | 18.5A Ta 49A Tc 27A Ta 85A Tc | 20nC @ 10V, 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS9933A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-fds9933a-datasheets-7400.pdf | -20V | -3.8A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 75MOhm | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 6 ns | 9ns | 28 ns | 31 ns | 3.8A | 8V | -20V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -800mV | 900mW | -20V | 2 P-Channel (Dual) | 600pF @ 10V | -800 mV | 75m Ω @ 3.8A, 4.5V | 1.5V @ 250μA | 10nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| QS8J4TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-qs8j4tr-datasheets-7606.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 20 Weeks | 8 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 550mW | 260 | 8 | 2 | 10 | 2 | Other Transistors | 8 ns | 20ns | 50 ns | 80 ns | 4A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 4A | 16A | 0.056Ohm | -30V | 2 P-Channel (Dual) | 800pF @ 10V | 56m Ω @ 4A, 10V | 2.5V @ 1mA | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| AO4611 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 8 | No | 2W | 2W | 2 | 20V | 60V | N and P-Channel | 2300pF @ 30V | 25m Ω @ 6.3A, 10V | 3V @ 250μA | 58nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMB3800N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmb3800n-datasheets-7365.pdf | 8-PowerWDFN | 3mm | 750μm | 1.9mm | Lead Free | 8 | 23 Weeks | 47mg | No SVHC | 40MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1.6W | Dual | 1.6W | 2 | FET General Purpose Power | 8 ns | 5ns | 5 ns | 21 ns | 4.8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.9V | 750mW | 60 pF | 30V | 2 N-Channel (Dual) | 465pF @ 15V | 1.9 V | 40m Ω @ 4.8A, 10V | 3V @ 250μA | 5.6nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| ZXMN3AMCTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-zxmn3amcta-datasheets-7278.pdf | 8-VDFN Exposed Pad | Lead Free | 8 | 36 Weeks | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7W | 260 | 8 | Dual | 40 | 2.45W | 2 | FET General Purpose Power | 1.7 ns | 2.3ns | 2.9 ns | 6.6 ns | 3.7A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 13A | 30V | 2 N-Channel (Dual) | 190pF @ 25V | 120m Ω @ 2.5A, 10V | 3V @ 250μA | 3.7A Ta | 2.3nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||
| QS8K21TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | 8-SMD, Flat Lead | Lead Free | 8 | 20 Weeks | 8 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 550mW | 260 | 8 | 1 | 10 | 2 | FET General Purpose Power | 9 ns | 25ns | 7 ns | 30 ns | 4A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 45V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.075Ohm | 45V | 2 N-Channel (Dual) | 460pF @ 10V | 53m Ω @ 4A, 10V | 2.5V @ 1mA | 5.4nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FC8J33040L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/panasonicelectroniccomponents-fc8j33040l-datasheets-7214.pdf | 8-SMD, Flat Lead | 2.9mm | 830μm | 2.4mm | 8 | 10 Weeks | 8 | EAR99 | unknown | 1W | NOT SPECIFIED | FC8J3304 | Dual | NOT SPECIFIED | 2 | 7 ns | 15 ns | 5A | 20V | SILICON | SWITCHING | 33V | METAL-OXIDE SEMICONDUCTOR | 5A | 24V | 2 N-Channel (Dual) | 220pF @ 10V | 38m Ω @ 2.5A, 10V | 2.5V @ 260μA | 2.8nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB70EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqjb70ept1ge3-datasheets-7304.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | 2 | 27W | 175°C | PowerPAK® SO-8 Dual | 9 ns | 13 ns | 11.3A | 20V | 100V | 27W Tc | 78mOhm | 100V | 2 N-Channel (Dual) | 220pF @ 25V | 95mOhm @ 4A, 10V | 3.5V @ 250μA | 11.3A Tc | 7nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K5TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8k5tb1-datasheets-6862.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | 2W | *K5 | 2W | 3.5A | 30V | 30V | 2 N-Channel (Dual) | 140pF @ 10V | 83m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87503Q3E | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | 6 | 6 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | NO LEAD | 260 | CSD87503 | NOT SPECIFIED | 2 | SILICON | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 15.6W | 10A | 194 pF | 2 N-Channel (Dual) Common Source | 1020pF @ 15V | 13.5m Ω @ 6A, 10V | 2.1V @ 250μA | 10A Ta | 17.4nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| FW297-TL-2W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-fw297tl2w-datasheets-7343.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 2 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | 1.8W | 4.5A | 60V | 1.8W | 2 N-Channel (Dual) | 750pF @ 20V | 58m Ω @ 4.5A, 10V | 2.6V @ 1mA | 14nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC7200S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc7200s-datasheets-7240.pdf | 8-PowerWDFN | 8 | 23 Weeks | 186mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1W | NO LEAD | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 13A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 700mW 1W | 7A | 30 pF | 2 N-Channel (Dual) | 660pF @ 15V | 22m Ω @ 6A, 10V | 3V @ 250μA | 7A 13A | 10nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI3590DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3590dvt1e3-datasheets-5561.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | DUAL | GULL WING | 260 | SI3590 | 6 | 2 | 30 | 830mW | 2 | Other Transistors | 5 ns | 2A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.5V | 0.077Ohm | 30V | N and P-Channel | 1.5 V | 77m Ω @ 3A, 4.5V | 1.5V @ 250μA | 2.5A 1.7A | 4.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SIZ342DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-siz342dtt1ge3-datasheets-7370.pdf | 8-PowerWDFN | 8 | 14 Weeks | EAR99 | unknown | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N8 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.6W 4.3W | 26.5A | 100A | 0.0115Ohm | 5 mJ | 2 N-Channel (Dual) | 650pF @ 15V | 11.5m Ω @ 14A, 10V | 2.4V @ 250μA | 15.7A Ta 100A Tc | 20nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FW4604-TL-2W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/onsemiconductor-fw4604tl2w-datasheets-7245.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 4 Weeks | 540.001716mg | 8 | ACTIVE, NOT REC (Last Updated: 5 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 1.8W | 8 | 2 | Dual | Other Transistors | 7.5 ns | 42ns | 40 ns | 43 ns | 4.5A | 20V | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 6A | -30V | N and P-Channel | 490pF @ 10V | 39m Ω @ 6A, 10V | 6A 4.5A | 9.1nC @ 10V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ956EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-sqj956ept1ge3-datasheets-7384.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 60V | 34W | 2 N-Channel (Dual) | 1395pF @ 30V | 26.7mOhm @ 5.2A, 10V | 2.5V @ 250μA | 23A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC4050SSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmc4050ssdq13-datasheets-7407.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 1.8W | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 5.3A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 1.8W | 4.2A | 0.06Ohm | N and P-Channel Complementary | 1790.8pF @ 20V | 45m Ω @ 3A, 10V | 1.8V @ 250μA | 37.56nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| QS8J2TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-SMD, Flat Lead | Lead Free | 8 | 20 Weeks | 8 | yes | EAR99 | No | 550mW | 8 | 2 | Dual | 2 | Other Transistors | 10 ns | 60ns | 180 ns | 300 ns | 4A | 10V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.036Ohm | -12V | 2 P-Channel (Dual) | 1940pF @ 6V | 36m Ω @ 4A, 4.5V | 1V @ 1mA | 20nC @ 4.5V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4532AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sq4532aeyt1ge3-datasheets-7201.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 2 | NOT SPECIFIED | 3.3W | 2 | 175°C | R-PDSO-G8 | 20V | SILICON | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7.3A | 0.031Ohm | 53 pF | N and P-Channel | 535pF @ 15V 528pF @ 15V | 31m Ω @ 4.9A, 10V, 70m Ω @ 3.5A, 10V | 2.5V @ 250μA | 7.3A Tc 5.3A Tc | 7.8nC @ 10V, 10.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG6898LSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmg6898lsdq13-datasheets-7254.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.28W | GULL WING | 260 | 40 | 2 | FET General Purpose Power | 9.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.28W | 30A | 0.016Ohm | 2 N-Channel (Dual) | 1149pF @ 10V | 16m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 26nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ730DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz730dtt1ge3-datasheets-7074.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | Lead Free | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | e3 | MATTE TIN | 48W | 260 | SIZ730 | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | 15ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 27W 48W | 100A | 0.0053Ohm | 45 mJ | 2 N-Channel (Half Bridge) | 830pF @ 15V | 9.3m Ω @ 15A, 10V | 2.2V @ 250μA | 16A 35A | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| QH8MA4TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/rohm-qh8ma4tcr-datasheets-0043.pdf | 8-SMD, Flat Lead | 8 | 20 Weeks | 2 | EAR99 | 1.5W | DUAL | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | 8A | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.016Ohm | 3.5 mJ | N and P-Channel | 640pF @ 15V | 16m Ω @ 9A, 10V | 2.5V @ 1mA | 9A 8A | 15.5nC @ 10V | Standard |
