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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Max Current Rating | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Min Breakdown Voltage | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI7922DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7922dnt1ge3-datasheets-9020.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 15 Weeks | 195mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7922 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 7 ns | 11ns | 11 ns | 8 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 10A | 2 N-Channel (Dual) | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 1.8A | 8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIA907EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia907edjtt1ge3-datasheets-9247.pdf | PowerPAK® SC-70-6 Dual | Contains Lead | 6 | 28.009329mg | 57mOhm | 6 | EAR99 | No | 7.8W | 6 | Dual | 1.9W | 2 | Other Transistors | 5 ns | 10ns | 10 ns | 30 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 57m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 4.5A Tc | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM5K5T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | 6-SMD (5 Leads), Flat Lead | 6 | 150mW | *K5 | 150mW | 300mA | 30V | 30V | 2 N-Channel (Dual) | 600m Ω @ 300mA, 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2010UDZ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2010udz7-datasheets-9328.pdf | 6-UDFN Exposed Pad | 16 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 700mW | NOT SPECIFIED | NOT SPECIFIED | 11A | 24V | 700mW | 2 N-Channel (Dual) Common Drain | 2665pF @ 10V | 7m Ω @ 5.5A, 4.5V | 1.5V @ 250μA | 33.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM3911DCX6 RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm3911dcx6rfg-datasheets-9296.pdf | SOT-23-6 | 20 Weeks | 20V | 1.15W | 2 P-Channel (Dual) | 882.51pF @ 6V | 140m Ω @ 2.2A, 4.5V | 950mV @ 250μA | 2.2A Ta | 15.23nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ346DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz346dtt1ge3-datasheets-9350.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 16W 16.7W | 30V | 2 N-Channel (Dual) | 325pF @ 15V 650pF @ 15V | 28.5m Ω @ 10A, 10V, 11.5m Ω @ 14.4A, 10V | 2.2V @ 250μA, 2.4V @ 250μA | 17A Tc 30A Tc | 5nC @ 4.5V, 9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P47NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 16 Weeks | 6 | 1W | 1W | 4A | 8V | 20V | -20V | 2 P-Channel (Dual) | 290pF @ 10V | 95m Ω @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7313QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7313qtr-datasheets-9108.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 Weeks | No SVHC | 8 | EAR99 | No | AEC-Q101 | 2.4W | GULL WING | 2.4W | 2 | FET General Purpose Power | 3.7 ns | 7.3ns | 11 ns | 21 ns | 6.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 3V | 450 mJ | 30V | 2 N-Channel (Dual) | 755pF @ 25V | 29m Ω @ 6.9A, 10V | 3V @ 250μA | 33nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAB400M12XM3 | Cree/Wolfspeed | $594.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | Module | 1200V | 2 N-Channel (Dual) | 2450pF @ 800V | 5.3mOhm @ 400A, 15V | 3.6V @ 92mA | 395A Tc | 908nC @ 15V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD110908ASAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald110908asal-datasheets-9244.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 4.8V | 810mV @ 1μA | 12mA 3mA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FTCO3V455A1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SPM® | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | HYBRID | 20kHz | ROHS3 Compliant | 2012 | /files/onsemiconductor-ftco3v455a1-datasheets-9253.pdf | 19-PowerDIP Module | 43.8mm | 5.2mm | 29.2mm | Lead Free | 19 | 4 Weeks | 28.206g | 19 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 8541.29.00.95 | 1 | 150A | e3 | Tin (Sn) | 115W | DUAL | AC MOTOR CONTROLLER | 150A | 150A | 20V | 40V | 40V | 6 N-Channel (3-Phase Bridge) | 1.66m Ω @ 80A, 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2036UCB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn2036ucb47-datasheets-9274.pdf | 4-XFBGA, WLBGA | 17 Weeks | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 1.45W | 2 N-Channel (Dual) Common Drain | 12.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7949DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7949dpt1e3-datasheets-8969.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | No SVHC | 64mOhm | 8 | yes | EAR99 | Tin | No | e3 | 1.5W | C BEND | 260 | SI7949 | 8 | Dual | 40 | 1.5W | 2 | Other Transistors | R-XDSO-C6 | 8 ns | 9ns | 9 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | -60V | 2 P-Channel (Dual) | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A | 40nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM3737 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm3737trpbfree-datasheets-9292.pdf | SOT-563, SOT-666 | 24 Weeks | YES | FET General Purpose Power | 0.35W | 20V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.54A | 2 N-Channel (Dual) | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA | 1.58nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1105SBL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2006 | /files/advancedlineardevicesinc-ald1105sbl-datasheets-9299.pdf | 14-SOIC (0.154, 3.90mm Width) | 8 Weeks | 14 | 500mW | Dual | 500mW | 14-SOIC | 2mA | 13.2V | 10.6V | 500mW | 1.2kOhm | -12V | 2 N and 2 P-Channel Matched Pair | 3pF @ 5V | 500Ohm @ 5V | 1V @ 1μA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7956DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7956dpt1e3-datasheets-2416.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 1.4W | C BEND | 260 | SI7956 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 13 ns | 36ns | 50 ns | 18 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 150V | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 150V | 2 N-Channel (Dual) | 105m Ω @ 4.1A, 10V | 4V @ 250μA | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN1033UCB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn1033ucb47-datasheets-9304.pdf | 4-UFBGA, WLBGA | 17 Weeks | 4 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.45W | 10 ns | 20ns | 52 ns | 83 ns | 6V | 2 N-Channel (Dual) Common Drain | 37nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1107SBL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald1107sbl-datasheets-9190.pdf | 14-SOIC (0.154, 3.90mm Width) | 14 | 8 Weeks | 14 | yes | EAR99 | unknown | 500mW | DUAL | GULL WING | 500mW | 4 | 2mA | -13.2V | SILICON | COMMON SUBSTRATE, 4 ELEMENTS | SWITCHING | 10.6V | METAL-OXIDE SEMICONDUCTOR | -12V | 4 P-Channel, Matched Pair | 3pF @ 5V | 1800 Ω @ 5V | 1V @ 1μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N35AFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 20V | 285mW Ta | 2 N-Channel (Dual) | 36pF @ 10V | 1.1 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 0.34nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN3A04DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmn3a04dn8ta-datasheets-9082.pdf | 30V | 6.8A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 19 Weeks | 73.992255mg | No SVHC | 20mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.15W | GULL WING | 260 | 8 | 2 | 40 | 2.15W | 5.2 ns | 6.1ns | 20.2 ns | 38.1 ns | 8.5A | 12V | 1.81W | 30V | 2 N-Channel (Dual) | 1890pF @ 15V | 20m Ω @ 12.6A, 10V | 1V @ 250μA (Min) | 6.5A | 36.8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC8020K6-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tray | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/microchiptechnology-tc8020k6g-datasheets-9196.pdf | 56-VFQFN Exposed Pad | 56 | 17 Weeks | 191.387631mg | 56 | EAR99 | Tin | No | e4 | NICKEL PALLADIUM GOLD | QUAD | 260 | 12 | 40 | 6 | 10 ns | 15ns | 15 ns | 20 ns | SILICON | COMPLEX | SWITCHING | N-CHANNEL AND P-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 8Ohm | -200V | 6 N and 6 P-Channel | 50pF @ 25V | 8 Ω @ 1A, 10V | 2.4V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2102 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/epc-epc2102-datasheets-9203.pdf | Die | 14 Weeks | Die | 60V | 2 N-Channel (Half Bridge) | 830pF @ 30V | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 23A | 6.8nC @ 5V | GaNFET (Gallium Nitride) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0921NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0921ndiatma1-datasheets-8754.pdf | 8-PowerTDFN | 18 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | 1W | NOT SPECIFIED | NOT SPECIFIED | 31A | 20V | 30V | 2 N-Channel (Dual) Asymmetrical | 1025pF @ 15V | 5m Ω @ 20A, 10V | 2V @ 250μA | 17A 31A | 8.9nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD114913SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald114913sal-datasheets-9220.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 2.7V | 1.26V @ 1μA | 12mA 3mA | Depletion Mode | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7922DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7922dnt1ge3-datasheets-9020.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 195mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7922 | 8 | 2 | Dual | 40 | 2.6W | 2 | FET General Purpose Powers | S-XDSO-C6 | 7 ns | 11ns | 11 ns | 8 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.5V | 10A | 100V | 2 N-Channel (Dual) | 3.5 V | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 1.8A | 8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI4904DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4904dyt1e3-datasheets-2203.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 14 Weeks | 186.993455mg | No SVHC | 8 | No | 2W | SI4904 | 2 | Dual | 2W | 2 | 8-SO | 2.39nF | 88 ns | 117ns | 19 ns | 62 ns | 8A | 16V | 40V | 2V | 3.25W | 16mOhm | 40V | 2 N-Channel (Dual) | 2390pF @ 20V | 16mOhm @ 5A, 10V | 2V @ 250μA | 8A | 85nC @ 10V | Standard | 16 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4943BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4943bdyt1e3-datasheets-9089.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 19mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 40 | 1.1W | 2 | Other Transistors | 11 ns | 10ns | 10 ns | 94 ns | -8.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3A | -20V | 2 P-Channel (Dual) | -1 V | 19m Ω @ 8.4A, 10V | 3V @ 250μA | 6.3A | 25nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A09DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-zxmn6a09dn8ta-datasheets-9099.pdf | 60V | 4.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | 40 | 2.1W | 2 | FET General Purpose Power | 4.9 ns | 5ns | 4.6 ns | 25.3 ns | 5.6A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.25W | 4.3A | 60V | 2 N-Channel (Dual) | 1407pF @ 40V | 40m Ω @ 8.2A, 10V | 3V @ 250μA | 4.3A | 24.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD87335Q3DT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/texasinstruments-csd87335q3dt-datasheets-0393.pdf | 8-PowerLDFN | 3.3mm | 3.3mm | Contains Lead | 8 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | 1.5mm | not_compliant | 1 | e3 | Matte Tin (Sn) | 6W | NO LEAD | 260 | 0.65mm | CSD87335 | SWITCHING CONTROLLER | NOT SPECIFIED | 20mA | 25A | 30V | 750mV | 12V | 27V | PULSE WIDTH MODULATION | BUCK | 6.7mOhm | 1500kHz | 2 N-Channel (Dual) | 1050pF @ 15V | 1.9V @ 250μA | 7.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5504BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 140mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | DUAL | C BEND | 260 | SI5504 | 8 | 2 | 40 | 1.5W | 2 | Other Transistors | 4 ns | 10ns | 5 ns | 10 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.12W 3.1W | 4A | 10A | 30V | N and P-Channel | 220pF @ 15V | 65m Ω @ 3.1A, 10V | 3V @ 250μA | 4A 3.7A | 7nC @ 10V | Logic Level Gate |
