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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SSM6N67NU,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 6-WDFN Exposed Pad | 6 | 12 Weeks | AEC-Q101 | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 4A | 0.0391Ohm | 2 N-Channel (Dual) | 310pF @ 15V | 39.1m Ω @ 2A, 4.5V | 1V @ 1mA | 4A Ta | 3.2nC @ 4.5V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8659-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-ech8659tlw-datasheets-0049.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 23 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | ESD PROTECTED | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | YES | 1.3W | NOT SPECIFIED | NOT SPECIFIED | 2 | R-XDSO-F8 | 7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.3W | 7A | 40A | 0.024Ohm | 2 N-Channel (Dual) | 710pF @ 10V | 24m Ω @ 3.5A, 10V | 2.6V @ 1mA | 11.8nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||
| SSM6L40TU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | N and P-Channel | 180pF 120pF @ 15V | 122m Ω @ 1A, 10V, 226m Ω @ 1A, 10V | 2.6V @ 1mA, 2V @ 1mA | 1.6A Ta 1.4A Ta | 5.1nC, 2.9nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM6K33T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-em6k33t2r-datasheets-9880.pdf | SOT-563, SOT-666 | Lead Free | 6 | 16 Weeks | yes | EAR99 | e2 | TIN COPPER | 150mW | FLAT | 260 | 6 | 2 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | 4 ns | 6ns | 55 ns | 15 ns | 200mA | 8V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | 50V | 2 N-Channel (Dual) | 25pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 1V @ 1mA | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||||||||||||
| SQ1922AEEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sq1922aeeht1ge3-datasheets-9933.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | SC-70-6 | 20V | 1.5W Tc | 2 N-Channel (Dual) | 60pF @ 10V | 300mOhm @ 400mA, 4.5V | 2.5V @ 250μA | 850mA Tc | 1.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N17FU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/toshiba-ssm6n17fute85lf-datasheets-0493.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | No SVHC | 6 | EAR99 | Silver, Tin | 200mW | Dual | 200mW | 2 | FET General Purpose Powers | 100 ns | 40 ns | 100mA | 7V | 50V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 200mW Ta | 0.1A | 2 N-Channel (Dual) | 7pF @ 3V | 1.5 V | 20 Ω @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P39TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 20V | 500mW Ta | 2 P-Channel (Dual) | 250pF @ 10V | 213m Ω @ 1A, 4V | 1V @ 1mA | 1.5A Ta | 6.4nC @ 4V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1101ASAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1101asal-datasheets-9948.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 40mA | 13.2V | 10.6V | 500mW | 75Ohm | -12V | 2 N-Channel (Dual) Matched Pair | 75Ohm @ 5V | 1V @ 10μA | Standard | 75 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N16FUTE85LF | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | EAR99 | unknown | 200mW | 2 | Dual | FET General Purpose Powers | 70 ns | 125 ns | 100mA | 1.1V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 20V | 2 N-Channel (Dual) | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| EFC2K101NUZTDG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | /files/onsemiconductor-efc2k101nuztdg-datasheets-9962.pdf | 6-SMD, No Lead | 6 Weeks | yes | 12V | 1.4W Ta | 2 N-Channel (Dual) Common Drain | 6.2m Ω @ 5A, 4.5V | 1.3V @ 1mA | 15A Ta | 16nC @ 3.8V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCQ4828A-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcq4828atp-datasheets-9969.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 260 | 10 | 60V | 1.25W Ta | 2 N-Channel (Dual) | 540pF @ 30V | 56m Ω @ 4.5A, 10V | 3V @ 250μA | 4.5A Ta | 10.5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1912AEEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | /files/vishaysiliconix-sq1912aeeht1ge3-datasheets-9964.pdf | PowerPAK® SC-70-6 Dual | 12 Weeks | 6 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 66 ns | 108ns | 390 ns | 715 ns | 800mA | 12V | 20V | 1.5W | 2 N-Channel (Dual) | 27pF @ 10V | 280m Ω @ 1.2A, 4.5V | 1.5V @ 250μA | 800mA Tc | 1.25nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVJD5121NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvjd5121nt1g-datasheets-9702.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 250mW | 2 | 22 ns | 34ns | 32 ns | 34 ns | 295mA | 20V | 60V | 60V | 2 N-Channel (Dual) | 26pF @ 20V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM6K7T2CR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-em6k7t2r-datasheets-3742.pdf | SOT-563, SOT-666 | 6 | 16 Weeks | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150mW | 0.2A | 1.4Ohm | 2 N-Channel (Dual) | 25pF @ 10V | 1.2 Ω @ 200mA, 2.5V | 1V @ 1mA | 200mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N44FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | YES | GULL WING | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 200mW Ta | 0.1A | 7Ohm | 2 N-Channel (Dual) | 8.5pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K6R8-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k6r840ex-datasheets-9527.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 64W | GULL WING | 8 | 2 | R-PDSO-G6 | 40A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 64W | 265A | 0.0072Ohm | 125 mJ | 2 N-Channel (Dual) | 3000pF @ 25V | 6.1m Ω @ 10A, 10V | 2.1V @ 1mA | 22.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN601DWKQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn601dwkq7-datasheets-9694.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 200mW | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 305mA Ta | 0.304nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCM3400A-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/microcommercialco-mcm3400atp-datasheets-9870.pdf | 6-VDFN Exposed Pad | 12 Weeks | 260 | 10 | 30V | 1.4W | 2 N-Channel | 1155pF @ 15V | 32m Ω @ 5.8A, 10V | 1.5V @ 250μA | 5A | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3439KDW-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/microcommercialco-si3439kdwtp-datasheets-9722.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 150mW | N and P-Channel | 120pF 113pF @ 16V | 380m Ω @ 650mA, 4.5V, 520m Ω @ 1A, 4.5V | 1.1V @ 250μA | 750mA 660mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1036X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-si1036xt1ge3-datasheets-9854.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 540mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 220mW | 2 N-Channel (Dual) | 36pF @ 15V | 540m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 1.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2103ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/epc-epc2103-datasheets-3103.pdf | Die | 16 Weeks | Die | 7.6nF | 23A | 80V | 2 N-Channel (Half Bridge) | 7600pF @ 40V | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 23A | 6.5nC @ 5V | GaNFET (Gallium Nitride) | 5.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N36TU,LF | Toshiba Semiconductor and Storage | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 500mW Ta | 2 N-Channel (Dual) | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA Ta | 1.23nC @ 4V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3686S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms3686s-datasheets-9580.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.1mm | Lead Free | 6 | 18 Weeks | 90mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | 2.5W | 2 | FET General Purpose Power | R-PDSO-N6 | 23 ns | 23A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 13A | 30V | 2 N-Channel (Dual) Asymmetrical | 1785pF @ 10V | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 13A 23A | 29nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SSM6N16FE,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 150mW Ta | 2 N-Channel (Dual) | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MC7252KDW-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/microcommercialco-mc7252kdwtp-datasheets-9785.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 260 | 10 | 60V 50V | 150mW | N and P-Channel | 40pF 30pF @ 10V 5V | 5 Ω @ 500mA, 10V, 8 Ω @ 100mA, 10V | 2.5V @ 1mA, 2V @ 250μA | 340mA 180mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC21D1UDA-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmc21d1uda7b-datasheets-9809.pdf | 6-SMD, No Lead | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 300mW | N and P-Channel | 31pF @ 15V 28.5pF @ 15V | 990m Ω @ 100mA, 4.5V, 1.9 Ω @ 100mA, 4.5V | 1V @ 250μA | 455mA Ta 328mA Ta | 0.41nC @ 4.5V, 0.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIX3439K-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/microcommercialco-six3439ktp-datasheets-9757.pdf | SOT-563, SOT-666 | 12 Weeks | EAR99 | 260 | 10 | 20V | N and P-Channel | 120pF 170pF @ 16V | 380m Ω @ 650mA, 4.5V, 520m Ω @ 1A, 4.5V | 1V @ 250μA, 1.1V @ 250μA | 750mA 660mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P35AFU,LF | Toshiba Semiconductor and Storage | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 20V | 285mW Ta | 2 P-Channel (Dual) | 42pF @ 10V | 1.4 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3134KDW-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/microcommercialco-si3134kdwtp-datasheets-9759.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 260 | 10 | 20V | 150mW | 2 N-Channel (Dual) | 120pF @ 16V | 380m Ω @ 650mA, 4.5V | 1.1V @ 250μA | 750mA | 20nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2041UVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn2041uvt7-datasheets-9827.pdf | SOT-23-6 Thin, TSOT-23-6 | 17 Weeks | 20V | 1.1W | 2 N-Channel (Dual) | 689pF @ 10V | 28m Ω @ 8.2A, 4.5V | 900mV @ 250μA | 5.8A Ta | 9.1nC @ 4.5V | Standard |
