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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SQJ990EP-T1_GE3 | Vishay Siliconix | $1.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj990ept1ge3-datasheets-0851.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual Asymmetric | 100V | 48W | 2 N-Channel (Dual) | 1390pF @ 25V 650pF @ 25V | 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V | 2.5V @ 250μA | 34A Tc | 30nC @ 10V, 15nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ912BEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqj912bept1ge3-datasheets-0855.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 40V | 48W Tc | 9mOhm | 2 N-Channel (Dual) | 3000pF @ 25V | 11mOhm @ 9A, 10V | 2V @ 250μA | 30A Tc | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ910AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqj910aept1ge3-datasheets-0857.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 48W | 30A | 120A | 0.007Ohm | 42 mJ | 2 N-Channel (Dual) | 1869pF @ 15V | 7m Ω @ 12A, 10V | 2.5V @ 250μA | 30A Tc | 39nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| SQJ260EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj260ept1ge3-datasheets-0863.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 60V | 27W Tc 48W Tc | 15.5mOhm | 2 N-Channel (Dual) | 1100pF @ 25V 2500pF @ 25V | 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V | 2.5V @ 250μA | 20A Tc 54A Tc | 20nC @ 10V, 40nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K3TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8k3tb1-datasheets-0871.pdf | SOP | 8 | 2W | 2W | 600pF | 7A | 30V | 25mOhm | 30V | 24 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS5DNF60L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts5dnf60l-datasheets-0875.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Tin (Sn) | 2W | GULL WING | 260 | STS5D | 8 | 2W | 2 | FET General Purpose Power | 15 ns | 28ns | 10 ns | 45 ns | 5A | 15V | SILICON | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 5A | 0.055Ohm | 2 N-Channel (Dual) | 1030pF @ 25V | 45m Ω @ 2A, 10V | 2.5V @ 250μA | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SP8K24FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/rohm-sp8k24fratb-datasheets-8655.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | Unknown | 8 | EAR99 | not_compliant | YES | 2W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 6A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 45V | 45V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 6A | 24A | 0.037Ohm | 2 N-Channel (Dual) | 1400pF @ 10V | 25m Ω @ 6A, 10V | 2.5V @ 1mA | 6A Ta | 21.6nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| DMHC10H170SFJ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmhc10h170sfj13-datasheets-0938.pdf | 12-VDFN Exposed Pad | 850μm | 18 Weeks | EAR99 | e3 | Matte Tin (Sn) | 2.1W | NOT SPECIFIED | 4 | NOT SPECIFIED | 2.1W | 150°C | 2.3A | 20V | 100V | 2 N and 2 P-Channel (H-Bridge) | 1167pF @ 25V | 160m Ω @ 5A, 10V | 3V @ 250μA | 2.9A 2.3A | 9.7nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8J62TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2010 | /files/rohm-sh8j62tb1-datasheets-8657.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 20 Weeks | 8 | 2W | *J62 | 2 | 2W | 150°C | 8-SOP | 800pF | 7 ns | 70 ns | 4.5A | 20V | 30V | 2W | 40mOhm | -30V | 2 P-Channel (Dual) | 800pF @ 10V | 56mOhm @ 4.5A, 10V | 2.5V @ 1mA | 4.5A | 8nC @ 5V | Logic Level Gate | 56 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K1FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.4W Ta | 2 N-Channel (Dual) | 230pF @ 10V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5A Ta | 5.5nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN3A06DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn3a06dn8ta-datasheets-0792.pdf | 30V | 4.8A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 35mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2.1W | 2 | FET General Purpose Powers | 3 ns | 6.4ns | 9.4 ns | 21.6 ns | 6.2A | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 1.8W | 4.9A | 30V | 2 N-Channel (Dual) | 796pF @ 25V | 1 V | 35m Ω @ 9A, 10V | 1V @ 250μA (Min) | 4.9A | 17.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||
| DMTH6016LSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmth6016lsdq13-datasheets-0795.pdf | 8-SOIC (0.154, 3.90mm Width) | 23 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 1.4W 1.9W | 2 N-Channel (Dual) | 864pF @ 30V | 19.5m Ω @ 10A, 10V | 2.5V @ 250μA | 7.6A Ta | 17nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7218DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7218dnt1e3-datasheets-0762.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7218 | 8 | 2 | Dual | 30 | 23W | 2 | FET General Purpose Powers | S-XDSO-C6 | 15 ns | 12ns | 10 ns | 10 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 35A | 5 mJ | 30V | 2 N-Channel (Dual) | 700pF @ 15V | 25m Ω @ 8A, 10V | 3V @ 250μA | 24A | 17nC @ 10V | Standard | |||||||||||||||||||||||||||||
| SQJ262EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj262ept1ge3-datasheets-0774.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 60V | 27W Tc 48W Tc | 12.6mOhm | 2 N-Channel (Dual) | 550pF @ 25V 1260pF @ 25V | 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V | 2.5V @ 250μA | 15A Tc 40A Tc | 10nC @ 10V, 23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD3510H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd3510h-datasheets-0747.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | Lead Free | 4 | 8 Weeks | 260.37mg | 80MOhm | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1.3W | SINGLE | GULL WING | 3.1W | 2 | Other Transistors | R-PSSO-G4 | 3ns | 5 ns | 25 ns | 2.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.3A | 37 mJ | 80V | N and P-Channel, Common Drain | 800pF @ 40V | 80m Ω @ 4.3A, 10V | 4V @ 250μA | 4.3A 2.8A | 18nC @ 10V | Logic Level Gate |
