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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI4932DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4932dyt1ge3-datasheets-1274.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 15MOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.2W | GULL WING | 260 | 8 | 30 | 2W | 2 | FET General Purpose Power | 21 ns | 10ns | 8 ns | 26 ns | 8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 8A | 30A | 30V | 2 N-Channel (Dual) | 1750pF @ 15V | 15m Ω @ 7A, 10V | 2.5V @ 250μA | 48nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SP8J2TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/rohmsemiconductor-sp8j2tb-datasheets-1235.pdf | -30V | -4.5A | SOIC | Lead Free | 8 | 8 | yes | EAR99 | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | 8 | 150°C | 10 | 2 | Other Transistors | Not Qualified | 850pF | 25ns | 4.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 0.056Ohm | 56 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M41TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-sh8m41tb1-datasheets-1301.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 2W | *M41 | 2W | 2.6A | 80V | N and P-Channel | 600pF @ 10V | 130m Ω @ 3.4A, 10V | 2.5V @ 1mA | 3.4A 2.6A | 9.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ500AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj500aept1ge3-datasheets-1233.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 48W | N and P-Channel | 1850pF @ 20V | 27m Ω @ 6A, 10V | 2.3V @ 250μA | 30A Tc | 38.1nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HP8S36TB | ROHM Semiconductor | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 6 | 20 Weeks | EAR99 | not_compliant | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 29W | 12A | 48A | 0.0133Ohm | 5.3 mJ | 2 N-Channel (Half Bridge) | 6100pF @ 15V | 2.4m Ω @ 32A, 10V | 2.5V @ 1mA | 27A 80A | 47nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5902BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5902bdct1e3-datasheets-1153.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 14 Weeks | 84.99187mg | 65mOhm | 8 | No | 3.12W | SI5902 | 2 | Dual | 1.5W | 2 | 1206-8 ChipFET™ | 220pF | 4 ns | 12ns | 12 ns | 10 ns | 4A | 20V | 30V | 3.12W | 65mOhm | 2 N-Channel (Dual) | 220pF @ 15V | 65mOhm @ 3.1A, 10V | 3V @ 250μA | 4A Tc | 7nC @ 10V | Logic Level Gate | 65 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SH8M24GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8m24gzetb-datasheets-0736.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 45V | 1.4W Ta | N and P-Channel | 550pF 1700pF @ 10V | 46m Ω @ 4.5A, 10V, 63m Ω @ 3.5A, 10V | 2.5V @ 1mA | 6A Ta | 9.6nC, 18.2nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5517DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5517dut1ge3-datasheets-1188.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | 8.3W | C BEND | 260 | SI5517 | 8 | 40 | 2.3W | 2 | Other Transistors | R-XDSO-C6 | 8 ns | 35ns | 55 ns | 40 ns | 7.2A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6A | 0.039Ohm | 20V | N and P-Channel | 520pF @ 10V | 39m Ω @ 4.4A, 4.5V | 1V @ 250μA | 6A | 16nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| BUK7K13-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk7k1360ex-datasheets-1145.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 64W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | R-PDSO-G6 | 40A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 64W | 213A | 0.01Ohm | 2 N-Channel (Dual) | 2163pF @ 25V | 10m Ω @ 10A, 10V | 4V @ 1mA | 30.1nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7620S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdms7620s-datasheets-1122.pdf | 8-PowerWDFN | 5mm | 750μm | 6mm | Lead Free | 6 | 16 Weeks | 211mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.5W | 2.2W | 2 | FET General Purpose Power | R-PDSO-N6 | 6.6 ns | 1.8ns | 1.5 ns | 17.4 ns | 12.4A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.2V | 1W | 0.0101A | 31 pF | 30V | 2 N-Channel (Dual) | 608pF @ 15V | 20m Ω @ 10.1A, 10V | 3V @ 250μA | 10.1A 12.4A | 11nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SH8K10SGZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/rohmsemiconductor-sh8k10sgzetb-datasheets-1252.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 30V | 1.4W Ta | 2 N-Channel (Dual) | 660pF 830F @ 10V | 24m Ω @ 7A, 10V, 19.6m Ω @ 8.5A, 10V | 2.5V @ 1mA | 7A Ta 8.5A Ta | 16.8nC, 17.8nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP4050SSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4050ssdq13-datasheets-1272.pdf | 8-SOIC (0.154, 3.90mm Width) | 17 Weeks | 8 | 1.25W | 8-SO | 674pF | 4A | 40V | 1.25W | 2 P-Channel (Dual) | 674pF @ 20V | 50mOhm @ 6A, 10V | 3V @ 250μA | 4A | 13.9nC @ 10V | Standard | 50 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4948BEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4948beyt1ge3-datasheets-1222.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 120MOhm | 8 | EAR99 | No | e3 | MATTE TIN | 1.4W | GULL WING | 260 | SI4948 | 8 | 2 | Dual | 30 | 2.4W | 2 | 10 ns | 15ns | 35 ns | 50 ns | -2.4A | 20V | SILICON | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | 2 P-Channel (Dual) | -3 V | 120m Ω @ 3.1A, 10V | 3V @ 250μA | 2.4A | 22nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| NTMFD4901NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfd4901nft1g-datasheets-1002.pdf | 8-PowerTDFN | Lead Free | 8 | 9 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 1.2W | FLAT | 8 | Dual | 2 | 17.9A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W 1.2W | 13.5A | 60A | 0.01Ohm | 2 N-Channel (Dual), Schottky | 1150pF @ 15V | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 10.3A 17.9A | 9.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMNH6021SPDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmnh6021spdq13-datasheets-0867.pdf | 8-PowerTDFN | 6 | 17 Weeks | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 1.5W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | 32A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 0.025Ohm | 64 mJ | 2 N-Channel (Dual) | 1143pF @ 25V | 25m Ω @ 15A, 10V | 3V @ 250μA | 8.2A 32A | 20.1nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ926DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-siz926dtt1ge3-datasheets-1074.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 20.2W 40W | 25V | 2 N-Channel (Dual) | 925pF @ 10V 2150pF @ 10V | 4.8m Ω @ 5A, 10V, 2.2m Ω @ 8A, 10V | 2.2V @ 250μA | 40A Tc 60A Tc | 19nC @ 10V, 41nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K6R2-40E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k6r240e115-datasheets-1170.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AVALANCHE RATED | No | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | 68W | GULL WING | 8 | 2 | Dual | 68W | 2 | R-PDSO-G6 | 6 ns | 7.1ns | 19.8 ns | 44.4 ns | 40A | 10V | 40V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 166 mJ | 40V | 2 N-Channel (Dual) | 3281pF @ 25V | 6m Ω @ 25A, 10V | 2.1V @ 1mA | 35.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SQJ992EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqj992ept1ge3-datasheets-1026.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 47mOhm | 8 | EAR99 | 34W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 34W | 2 | R-PSSO-G4 | 15A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 60A | 2 N-Channel (Dual) | 446pF @ 30V | 56.2m Ω @ 3.7A, 10V | 2.5V @ 250μA | 12nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K13-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k1360ex-datasheets-1178.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 64W | GULL WING | 8 | 2 | R-PDSO-G6 | 40A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 64W | 190A | 0.0125Ohm | 2 N-Channel (Dual) | 2953pF @ 25V | 12.5m Ω @ 10A, 5V | 2.1V @ 1mA | 22.4nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4282EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/vishaysiliconix-sq4282eyt1ge3-datasheets-1207.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | 8-SOIC | 10 ns | 11ns | 8 ns | 34 ns | 8A | 20V | 30V | 3.9W | 2 N-Channel (Dual) | 2367pF @ 15V | 12.3mOhm @ 15A, 10V | 2.5V @ 250μA | 8A Tc | 47nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC6320K6-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tc6320k6g-datasheets-1076.pdf | 8-VDFN Exposed Pad | 4.89mm | 1.37mm | 3.91mm | 8 | 16 Weeks | 37.393021mg | 8 | EAR99 | Tin | No | e3 | DUAL | 260 | TC6320 | 2 | 40 | 2 | Other Transistors | 10 ns | 15ns | 15 ns | 20 ns | 5.2A | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 7Ohm | 200V | N and P-Channel | 110pF @ 25V | 7 Ω @ 1A, 10V | 2V @ 1mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| FCAB21490L1 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/panasonicelectroniccomponents-fcab21490l1-datasheets-1000.pdf | 10-SMD, No Lead | 16 Weeks | 10-SMD | 3.5W Ta | 2 N-Channel (Dual) | 3570pF @ 10V | 1.4V @ 1.11mA | 25nC @ 4V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8M51TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/rohmsemiconductor-qs8m51tr-datasheets-1008.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 20 Weeks | 8 | EAR99 | No | 1.5W | DUAL | *M51 | 8 | 2 | 10 ns | 1.5A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 2A | 6A | 0.355Ohm | N and P-Channel | 290pF @ 25V | 325m Ω @ 2A, 10V | 2.5V @ 1mA | 2A 1.5A | 4.7nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| STS8DNF3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts8dnf3ll-datasheets-0996.pdf | 30V | 8A | 8-SOIC (0.154, 3.90mm Width) | 12.7mm | 6.35mm | 6.35mm | Lead Free | 8 | 4.535924g | 20mOhm | 8 | NRND (Last Updated: 8 months ago) | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.6W | GULL WING | 260 | STS8DN | 8 | 30 | 2W | 2 | FET General Purpose Power | 18 ns | 32ns | 11 ns | 21 ns | 8A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 30V | 2 N-Channel (Dual) | 800pF @ 25V | 20m Ω @ 4A, 10V | 1V @ 250μA | 17nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| FDMS3660S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms3660s-datasheets-1033.pdf | 8-PowerTDFN | 5mm | 1.1mm | 5.9mm | Lead Free | 6 | 13 Weeks | 171mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | 2.5W | FLAT | FDMS3660S | Dual | 2.5W | 2 | FET General Purpose Power | R-PDSO-F6 | 7.7 ns | 19 ns | 30A | 12V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.5V | 1W | 13A | 70 pF | 30V | 2 N-Channel (Dual) Asymmetrical | 1765pF @ 15V | 1.5 V | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 30A 60A | 29nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SQJ560EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj560ept1ge3-datasheets-1042.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 60V | 34W Tc | N and P-Channel | 1650pF @ 25V | 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc 18A Tc | 30nC @ 10V, 45nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ912BEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqj912bept1ge3-datasheets-0855.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 40V | 48W Tc | 9mOhm | 2 N-Channel (Dual) | 3000pF @ 25V | 11mOhm @ 9A, 10V | 2V @ 250μA | 30A Tc | 60nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ910AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqj910aept1ge3-datasheets-0857.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 48W | 30A | 120A | 0.007Ohm | 42 mJ | 2 N-Channel (Dual) | 1869pF @ 15V | 7m Ω @ 12A, 10V | 2.5V @ 250μA | 30A Tc | 39nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ260EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj260ept1ge3-datasheets-0863.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 60V | 27W Tc 48W Tc | 15.5mOhm | 2 N-Channel (Dual) | 1100pF @ 25V 2500pF @ 25V | 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V | 2.5V @ 250μA | 20A Tc 54A Tc | 20nC @ 10V, 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K3TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8k3tb1-datasheets-0871.pdf | SOP | 8 | 2W | 2W | 600pF | 7A | 30V | 25mOhm | 30V | 24 mΩ |
