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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| NTZD3155CT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntzd3155ct2g-datasheets-2996.pdf | 20V | 540mA | SOT-563, SOT-666 | Lead Free | 6 | 13 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | YES | 250mW | FLAT | 260 | NTZD3155C | 6 | Dual | 40 | 250mW | 2 | Other Transistors | 12ns | 19 ns | 35 ns | 540mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.55Ohm | 20V | N and P-Channel | 150pF @ 16V | 1 V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA 430mA | 2.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| NTLJD2104PTAG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ntljd2104ptbg-datasheets-3009.pdf | 6-WDFN Exposed Pad | 6 | yes | unknown | e3 | MATTE TIN | YES | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | COMMERCIAL | S-XDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 700mW | 2.4A | 0.12Ohm | 2 P-Channel (Dual) | 467pF @ 6V | 90m Ω @ 3A, 4.5V | 800mV @ 250μA | 2.4A | 8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2103 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2103-datasheets-3103.pdf | Die | 14 Weeks | Die | 80V | 2 N-Channel (Half Bridge) | 760pF @ 40V | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 28A | 6.5nC @ 5V | GaNFET (Gallium Nitride) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLJD3183CZTBG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-ntljd3183cztag-datasheets-2757.pdf | 6-WDFN Exposed Pad | 6 | yes | e3 | TIN | YES | DUAL | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | COMMERCIAL | S-PDSO-N6 | 20V | 710mW | N and P-Channel | 355pF @ 10V | 68m Ω @ 2A, 4.5V | 1V @ 250μA | 2.6A 2.2A | 7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138PS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-bss138ps115-datasheets-3050.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 4 Weeks | No SVHC | 1.6Ohm | 6 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 420mW | GULL WING | 260 | 6 | 30 | 280mW | 2 | 2 ns | 3ns | 4 ns | 9 ns | 320mA | 20V | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 420mW | 0.32A | 60V | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 300mA, 10V | 1.5V @ 250μA | 0.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| DMN63D8LDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn63d8ldw7-datasheets-3013.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1.1mm | 1.35mm | Lead Free | 6 | 15 Weeks | 6.010099mg | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | AEC-Q101 | 300mW | GULL WING | 260 | DMN63D8L | Dual | 40 | 300mW | 2 | 150°C | 3.3 ns | 3.2ns | 6.3 ns | 12 ns | 220mA | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 4.5Ohm | 30V | 2 N-Channel (Dual) | 22pF @ 25V | 2.8 Ω @ 250mA, 10V | 1.5V @ 250μA | 870nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| UPA503T-T1-A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-upa503tt1a-datasheets-3138.pdf | SC-74A, SOT-753 | SC-59-5, Mini Mold | 50V | 300mW | 2 P-Channel (Dual) | 17pF @ 5V | 60Ohm @ 10mA, 10V | 2.5V @ 1μA | 100mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4963BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4963bdyt1e3-datasheets-2990.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 32mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4963 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 30 ns | 40ns | 40 ns | 80 ns | 6.5A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | -600mV | 4.9A | -20V | 2 P-Channel (Dual) | 32m Ω @ 6.5A, 4.5V | 1.4V @ 250μA | 4.9A | 21nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| NTLJD2104PTBG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ntljd2104ptbg-datasheets-3009.pdf | 6-WDFN Exposed Pad | 6 | yes | unknown | e3 | MATTE TIN | YES | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | COMMERCIAL | S-XDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 700mW | 2.4A | 0.12Ohm | 2 P-Channel (Dual) | 467pF @ 6V | 90m Ω @ 3A, 4.5V | 800mV @ 250μA | 2.4A | 8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6913DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6913dqt1ge3-datasheets-3011.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | No SVHC | 21mOhm | 8 | yes | EAR99 | Tin | No | e3 | 830mW | GULL WING | 260 | SI6913 | 8 | Dual | 40 | 830mW | 2 | Other Transistors | 45 ns | 80ns | 80 ns | 130 ns | -4.4A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -900mV | 4.9A | -12V | 2 P-Channel (Dual) | 21m Ω @ 5.8A, 4.5V | 900mV @ 400μA | 4.9A | 28nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| BSO330N02KGFUMA1 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-bso330n02kgfuma1-datasheets-2812.pdf | 8-SOIC (0.154, 3.90mm Width) | PG-DSO-8 | 20V | 1.4W | 2 N-Channel (Dual) | 730pF @ 10V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 20μA | 5.4A | 4.9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS5K2TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 30V | 2A | SOT-23-5 Thin, TSOT-23-5 | 2.9mm | 850μm | 1.6mm | Lead Free | 5 | 20 Weeks | No SVHC | 100MOhm | 5 | yes | EAR99 | No | e1 | TIN SILVER COPPER | 1.25W | GULL WING | 260 | *K2 | 5 | Dual | 10 | 1.25W | 2 | FET General Purpose Power | 8 ns | 10ns | 10 ns | 21 ns | 2A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.5V | 2A | 8A | 30V | 2 N-Channel (Dual) Common Source | 175pF @ 10V | 1.5 V | 100m Ω @ 2A, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| NTHD5903T1G | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-nthd5903t1g-datasheets-2848.pdf | 8-SMD, Flat Lead | 8 | no | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | YES | C BEND | 260 | 8 | 40 | 2 | COMMERCIAL | R-XDSO-C8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.1W | 2.2A | 0.155Ohm | 2 P-Channel (Dual) | 155m Ω @ 2.2A, 4.5V | 600mV @ 250μA | 2.2A | 7.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6911 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds6911-datasheets-2872.pdf | 20V | 7.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 900mW | GULL WING | Dual | 1.6W | 2 | FET General Purpose Power | 9 ns | 5ns | 5 ns | 26 ns | 7.5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.013Ohm | 20V | 2 N-Channel (Dual) | 1130pF @ 15V | 1.8 V | 13m Ω @ 7.5A, 10V | 3V @ 250μA | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| EMH2417R-TL-H | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-emh2417rtlh-datasheets-2897.pdf | 8-SMD, Flat Lead | SOT-383FL, EMH8 | 12V | 1.3W | 2 N-Channel (Dual) Common Drain | 10mOhm @ 5A, 4.5V | 1.3V @ 1mA | 11A | 16nC @ 4.5V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4559ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4559adyt1e3-datasheets-2899.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 120mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4559 | 8 | 2 | Dual | 30 | 2W | 2 | Other Transistors | 30 ns | 70ns | 30 ns | 40 ns | 4.5A | 20V | 60V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 3.1W 3.4W | 4.3A | 6.1 mJ | 60V | N and P-Channel | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A 3.9A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||
| NTQD6866R2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntqd6866r2g-datasheets-2776.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e0 | TIN LEAD | YES | GULL WING | 240 | 8 | 30 | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 940mW | 4.7A | 0.032Ohm | 175 pF | 2 N-Channel (Dual) | 1400pF @ 16V | 32m Ω @ 6.9A, 4.5V | 1.2V @ 250μA | 4.7A | 22nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7304 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/infineontechnologies-irf7304-datasheets-2919.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | GULL WING | 245 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 3.6A | 0.09Ohm | 2 P-Channel (Dual) | 610pF @ 15V | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 4.3A | 22nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLJD3181PZTAG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ntljd3181pztbg-datasheets-2702.pdf | 6-WDFN Exposed Pad | 6 | yes | e3 | MATTE TIN | YES | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | COMMERCIAL | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 710mW | 3.2A | 0.1Ohm | 2 P-Channel (Dual) | 450pF @ 10V | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 2.2A | 7.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO4804HUMA2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/rochesterelectronicsllc-bso4804huma2-datasheets-2930.pdf | 8-SOIC (0.154, 3.90mm Width) | PG-DSO-8 | 30V | 2W | 2 N-Channel (Dual) | 870pF @ 25V | 20mOhm @ 8A, 10V | 2V @ 30μA | 8A Ta | 17nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K2TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8k2tb-datasheets-2901.pdf | 30V | 6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | No | e2 | TIN COPPER | 2W | GULL WING | 260 | *K2 | 8 | 10 | 2 | FET General Purpose Power | 9 ns | 21ns | 13 ns | 36 ns | 6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6A | 24A | 0.047Ohm | 2 N-Channel (Dual) | 520pF @ 10V | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 10.1nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| NTJD2152PT1 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntjd2152pt1g-datasheets-2640.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | no | unknown | e0 | TIN LEAD | YES | GULL WING | 240 | 6 | 30 | 2 | COMMERCIAL | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 8V | 8V | METAL-OXIDE SEMICONDUCTOR | 270mW | 0.775A | 0.3Ohm | 40 pF | 2 P-Channel (Dual) | 225pF @ 8V | 300m Ω @ 570mA, 4.5V | 1V @ 250μA | 775mA | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| EMH2411R-TL-H | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-emh2411rtlh-datasheets-2949.pdf | 8-SMD, Flat Lead | 8-EMH | 30V | 1.4W | 2 N-Channel (Dual) Common Drain | 36.5mOhm @ 2.5A, 4.5V | 5A | 5.9nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG15N06S3L-45 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-ipg15n06s3l45-datasheets-2792.pdf | 8-PowerVDFN | PG-TDSON-8-4 | 55V | 21W | 2 N-Channel (Dual) | 1420pF @ 25V | 45mOhm @ 10A, 10V | 2.2V @ 10μA | 15A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPC8012S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdpc8012s-datasheets-2951.pdf | 8-PowerWDFN | 3.3mm | 725μm | 3.3mm | 8 | 12 Weeks | 192mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | 2 | FET General Purpose Power | 3ns | 3 ns | 34 ns | 88A | 12V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 800mW 900mW | MO-240BA | 13A | 0.007Ohm | 25V | 2 N-Channel (Dual) Asymmetrical | 1075pF @ 13V | 7m Ω @ 12A, 4.5V | 2.2V @ 250μA | 13A 26A | 8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| MCH6663-TL-H | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/rochesterelectronicsllc-mch6663tlh-datasheets-2795.pdf | 6-SMD, Flat Leads | 6-MCPH | 30V | 800mW | N and P-Channel | 88pF @ 10V | 188mOhm @ 900mA, 10V | 1.8A 1.5A | 2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMDF3N03HDR2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-mmdf3n03hdr2-datasheets-2796.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | no | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA LOW RESISTANCE | e0 | TIN LEAD | YES | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 4.1A | 40A | 0.07Ohm | 324 mJ | 2 N-Channel (Dual) | 630pF @ 24V | 70m Ω @ 3A, 10V | 3V @ 250μA | 4.1A | 16nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84DW-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-bss84dw7f-datasheets-2804.pdf | -50V | -130mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 15 Weeks | 6.010099mg | No SVHC | 10Ohm | 6 | yes | EAR99 | Tin | No | e3 | 300mW | GULL WING | 260 | BSS84DW | 6 | 2 | Dual | 40 | 300mW | 2 | Other Transistors | 10 ns | 18 ns | 130mA | 20V | -50V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | -1.6V | 50V | 0.13A | -50V | 2 P-Channel (Dual) | 45pF @ 25V | -1.6 V | 10 Ω @ 100mA, 5V | 2V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||
| NTMD2C02R2SG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ntmd2c02r2sg-datasheets-2766.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | 40 | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 5.2A | 48A | 0.043Ohm | N and P-Channel | 1100pF @ 10V | 43m Ω @ 4A, 4.5V | 1.2V @ 250μA | 5.2A 3.4A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDW9926A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdw9926a-datasheets-2768.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | unknown | e3 | TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 600mW | 4.5A | 0.032Ohm | 2 N-Channel (Dual) | 630pF @ 10V | 32m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 4.5A | 9nC @ 4.5V | Logic Level Gate |
