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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| FW342-TL-E | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Non-RoHS Compliant | /files/rochesterelectronicsllc-fw342tle-datasheets-3449.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP | 30V | 1.8W | N and P-Channel | 850pF @ 10V | 33mOhm @ 6A, 10V | 6A 5A | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC2038LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc2038lvt7-datasheets-3225.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.95mm | 1mm | 1.65mm | Lead Free | 6 | No SVHC | 74mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | Gold | No | e3 | Matte Tin (Sn) | 800mW | DUAL | GULL WING | 260 | DMC2038 | 6 | 40 | 800mW | 2 | Other Transistors | 150°C | 11 ns | 21 ns | 2.6A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.5A | 100 pF | 20V | N and P-Channel | 530pF @ 10V | 35m Ω @ 4A, 4.5V | 1V @ 250μA | 3.7A 2.6A | 17nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| AON7804 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aon7804-datasheets-9095.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 8 | 3.1W | 17W | 2 | FET General Purpose Power | 9A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 888pF @ 15V | 21m Ω @ 8A, 10V | 2.4V @ 250μA | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2100 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2100engrt-datasheets-2540.pdf | Die | 14 Weeks | Die | 30V | 2 N-Channel (Half Bridge) | 475pF @ 15V 1960pF @ 15V | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 10A Ta 40A Ta | 4.9nC @ 15V, 19nC @ 15V | GaNFET (Gallium Nitride) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2990UDJ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn2990udj7-datasheets-3336.pdf | SOT-963 | Lead Free | 6 | 16 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 350mW | FLAT | 260 | 6 | Dual | 40 | 350mW | 2 | FET General Purpose Power | 4 ns | 3.3ns | 6.4 ns | 19 ns | 450mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.33A | 0.99Ohm | 2 N-Channel (Dual) | 27.6pF @ 16V | 990m Ω @ 100mA, 4.5V | 1V @ 250μA | 0.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| BSS84AKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nexperiausainc-bss84aks115-datasheets-3339.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | 6 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | GULL WING | 260 | 6 | 30 | 2 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 445mW | 8.5Ohm | 2 P-Channel (Dual) | 36pF @ 25V | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 160mA | 0.35nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6605-TL-E | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-mch6605tle-datasheets-3362.pdf | 6-SMD, Flat Leads | 6-MCPH | 50V | 800mW | 2 P-Channel (Dual) | 6.2pF @ 10V | 22Ohm @ 40mA, 10V | 140mA | 1.32nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FG6943010R | Panasonic Electronic Components | $1.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fg6943010r-datasheets-3046.pdf | SOT-563, SOT-666 | 1.6mm | 500μm | 1.2mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | 8541.21.00.95 | e6 | Tin/Bismuth (Sn/Bi) | 125mW | FLAT | NOT SPECIFIED | FG694301 | Dual | NOT SPECIFIED | 2 | 12pF | 100 ns | 100 ns | 100mA | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.1A | 2Ohm | -30V | N and P-Channel | 1 V | Standard | |||||||||||||||||||||||||||||||||||||||||
| NTGD4167CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntgd4167ct1g-datasheets-2992.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.1mm | 1mm | 1.7mm | Lead Free | 6 | 4 Weeks | No SVHC | 90MOhm | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 900mW | GULL WING | NTGD4167C | 6 | Dual | 1.1W | 2 | Other Transistors | 8 ns | 8ns | 8 ns | 22 ns | 2.6A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 900mV | 30V | N and P-Channel | 295pF @ 15V | 90m Ω @ 2.6A, 4.5V | 1.5V @ 250μA | 2.6A 1.9A | 5.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| FW344A-TL-2W | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-fw344atl2w-datasheets-3202.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 1.7W | N and P-Channel | 280pF @ 10V | 64mOhm @ 4.5A, 10V | 4.5A 3.5A | 5.6nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD235CH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsd235ch6327xtsa1-datasheets-3204.pdf | 6-VSSOP, SC-88, SOT-363 | Lead Free | 6 | 10 Weeks | No SVHC | 6 | yes | EAR99 | AVALANCHE RATED | 8541.21.00.95 | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | 500mW | DUAL | GULL WING | NOT SPECIFIED | BSD235 | NOT SPECIFIED | 2 | 530mA | 12V | -20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.95A | 0.35Ohm | N and P-Channel | 47pF @ 10V | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 950mA 530mA | 0.34nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| EM6M2T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-em6m2t2r-datasheets-2858.pdf | SOT-563, SOT-666 | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | 150mW | DUAL | FLAT | 260 | *M2 | 6 | 10 | 2 | Other Transistors | 200mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150mW | 0.2A | 1.4Ohm | N and P-Channel | 25pF @ 10V | 1 Ω @ 200mA, 4V | 1V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN3190LDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn3190ldw7-datasheets-3156.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 15 Weeks | 6.010099mg | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 320mW | GULL WING | 260 | 6 | 2 | Dual | 2 | 4.5 ns | 8.9ns | 15.6 ns | 30.3 ns | 1A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1A | 0.19Ohm | 2 N-Channel (Dual) | 87pF @ 20V | 190m Ω @ 1.3A, 10V | 2.8V @ 250μA | 2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| UPA610TA-T1-A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-upa610tat1a-datasheets-3241.pdf | SC-74, SOT-457 | SC-74-6, (Mini Mold) | 30V | 300mW | 2 P-Channel (Dual) | 5pF @ 3V | 13Ohm @ 10mA, 10V | 100mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM6K34T2CR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | SOT-563, SOT-666 | Lead Free | 16 Weeks | yes | 120mW | NOT SPECIFIED | NOT SPECIFIED | 200mA | 50V | 120mW | 2 N-Channel (Dual) | 26pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | Logic Level Gate, 0.9V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FC6943010R | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/panasonicelectroniccomponents-fc6943010r-datasheets-3071.pdf | SOT-563, SOT-666 | 1.6mm | 500μm | 1.2mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | 8541.21.00.95 | 125mW | FLAT | NOT SPECIFIED | FC694301 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 100 ns | 100 ns | 100mA | 12V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.1A | 6Ohm | 2 N-Channel (Dual) | 12pF @ 3V | 1 V | 8 Ω @ 10mA, 4V | 1.5V @ 1μA | Standard | ||||||||||||||||||||||||||||||||||||||||||
| FDG6303N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fdg6303n-datasheets-3278.pdf | 25V | 500mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 450mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | 300mW | GULL WING | Dual | 300mW | 2 | FET General Purpose Power | 3 ns | 8.5ns | 8.5 ns | 17 ns | 500mA | 8V | 25V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 800mV | 0.5A | 25V | 2 N-Channel (Dual) | 50pF @ 10V | 800 mV | 450m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 2.3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| NTJD4401NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-ntjd4401nt1g-datasheets-3295.pdf | 20V | 630mA | 6-TSSOP, SC-88, SOT-363 | 2.1844mm | 990.6μm | 1.3462mm | Lead Free | 6 | 17 Weeks | No SVHC | 220mOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 270mW | GULL WING | 260 | NTJD4401N | 6 | Dual | 40 | 270mW | 2 | FET General Purpose Power | 83 ns | 227ns | 227 ns | 786 ns | 630mA | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 920mV | 5 pF | 20V | 2 N-Channel (Dual) | 46pF @ 20V | 920 mV | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| EMH2407-S-TL-H | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | Non-RoHS Compliant | /files/rochesterelectronicsllc-em773fhn33551-datasheets-4560.pdf | 8-SMD, Flat Lead | 8-EMH | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN26D0UDJ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn26d0udj7-datasheets-3122.pdf | SOT-963 | 1.05mm | 450μm | 850μm | Lead Free | 6 | 15 Weeks | No SVHC | 6 | yes | EAR99 | ESD PROTECTION | No | e3 | Matte Tin (Sn) | 300mW | FLAT | 260 | DMN26D0UDJ | 6 | 40 | 300mW | 2 | FET General Purpose Powers | 3.8 ns | 7.9ns | 15.2 ns | 13.4 ns | 240mA | 10V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.18A | 3Ohm | 2 N-Channel (Dual) | 14.1pF @ 15V | 3 Ω @ 100mA, 4.5V | 1.05V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SC8673040L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | DEPLETION MODE | RoHS Compliant | /files/panasonicelectroniccomponents-sc8673040l-datasheets-2266.pdf | 8-PowerSMD, Flat Leads | 4.9mm | 950μm | 5.9mm | 6 | 12 Weeks | 8 | EAR99 | unknown | 40W | NOT SPECIFIED | Dual | NOT SPECIFIED | 2 | R-PDSO-F6 | 18 ns | 14ns | 11 ns | 75 ns | 46A | 3V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.7W 2.5W | 10A | 0.014Ohm | 2 N-Channel (Dual) Asymmetrical | 1092pF @ 10V | 10m Ω @ 8A, 10V | 3V @ 5.85mA | 16A 46A | 6.3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| EMH2409-TL-H | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-emh2409tlh-datasheets-3161.pdf | 8-SMD, Flat Lead | 8-EMH | 30V | 1.2W | 2 N-Channel (Dual) | 240pF @ 10V | 59mOhm @ 2A, 10V | 4A | 4.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2111 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/epc-epc2111-datasheets-3182.pdf | Die | 14 Weeks | Die | 30V | 2 N-Channel (Half Bridge) | 230pF @ 15V 590pF @ 15V | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 16A Ta | 2.2nC @ 5V, 5.7nC @ 5V | GaNFET (Gallium Nitride) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTZD3154NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntzd3154nt1g-datasheets-3038.pdf | 20V | 540mA | SOT-563, SOT-666 | 1.7mm | 600μm | 1.3mm | Lead Free | 6 | 15 Weeks | No SVHC | 400MOhm | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 250mW | FLAT | 260 | NTZD3154N | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 6 ns | 4ns | 4 ns | 16 ns | 540mA | 6V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 0.54A | 20V | 2 N-Channel (Dual) | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||
| DMG6601LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmg6601lvt7-datasheets-3115.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 1mm | 1.6mm | Lead Free | 6 | 15 Weeks | No SVHC | 26 | yes | EAR99 | HIGH RELIABILITY | Gold | e3 | Matte Tin (Sn) | AEC-Q101 | 850mW | DUAL | GULL WING | 260 | DMG6601 | 2 | NOT SPECIFIED | 850mW | 2 | 150°C | R-PDSO-G6 | 1.7 ns | 4.6ns | 2.2 ns | 18.3 ns | 2.5A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.8A | 0.055Ohm | 30V | N and P-Channel | 422pF @ 15V | 55m Ω @ 3.4A, 10V | 1.5V @ 250μA | 3.8A 2.5A | 12.3nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| FDG6302P | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdg6302p-datasheets-3044.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | YES | GULL WING | 260 | 6 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 300mW | 0.14A | 2 P-Channel (Dual) | 12pF @ 10V | 10 Ω @ 140mA, 4.5V | 1.5V @ 250μA | 140mA | 0.31nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTGD4161PT1G | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-ntgd4161pt1g-datasheets-3062.pdf | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 30V | 600mW | 2 P-Channel (Dual) | 281pF @ 15V | 160mOhm @ 2.1A, 10V | 3V @ 250μA | 1.5A | 7.1nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTZD3155CT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntzd3155ct2g-datasheets-2996.pdf | 20V | 540mA | SOT-563, SOT-666 | Lead Free | 6 | 13 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | YES | 250mW | FLAT | 260 | NTZD3155C | 6 | Dual | 40 | 250mW | 2 | Other Transistors | 12ns | 19 ns | 35 ns | 540mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.55Ohm | 20V | N and P-Channel | 150pF @ 16V | 1 V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA 430mA | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| NTLJD2104PTAG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ntljd2104ptbg-datasheets-3009.pdf | 6-WDFN Exposed Pad | 6 | yes | unknown | e3 | MATTE TIN | YES | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | COMMERCIAL | S-XDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 700mW | 2.4A | 0.12Ohm | 2 P-Channel (Dual) | 467pF @ 6V | 90m Ω @ 3A, 4.5V | 800mV @ 250μA | 2.4A | 8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2103 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2103-datasheets-3103.pdf | Die | 14 Weeks | Die | 80V | 2 N-Channel (Half Bridge) | 760pF @ 40V | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 28A | 6.5nC @ 5V | GaNFET (Gallium Nitride) |
