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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| BUK9K12-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k1260ex-datasheets-5489.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | AEC-Q101; IEC-60134 | 68W | GULL WING | 8 | 2 | R-PDSO-G6 | 35A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 68W | 204A | 0.0115Ohm | 118 mJ | 2 N-Channel (Dual) | 3470pF @ 25V | 10.7m Ω @ 15A, 10V | 2.1V @ 1mA | 24.5nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6875 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6875-datasheets-5249.pdf | -20V | -6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 30mOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 8 ns | 15ns | 35 ns | 98 ns | -6A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -800mV | 900mW | 6A | -20V | 2 P-Channel (Dual) | 2250pF @ 10V | 30m Ω @ 6A, 4.5V | 1.5V @ 250μA | 6A | 31nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI4288DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4288dyt1ge3-datasheets-5505.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | e3 | MATTE TIN | 3.1W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | 150°C | 7 ns | 8 ns | 16 ns | 7.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 40V | 2 N-Channel (Dual) | 580pF @ 20V | 20m Ω @ 10A, 10V | 2.5V @ 250μA | 9.2A | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4931DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4931dyt1e3-datasheets-5063.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | 1.1W | GULL WING | SI4931 | 8 | Dual | 1.1W | 2 | Other Transistors | 25 ns | 46ns | 46 ns | 230 ns | -8.9A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 6.7A | -12V | 2 P-Channel (Dual) | 18m Ω @ 8.9A, 4.5V | 1V @ 350μA | 6.7A | 52nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4948BEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4948beyt1ge3-datasheets-1222.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 120mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 1.4W | GULL WING | 260 | SI4948 | 8 | 2 | Dual | 30 | 1.4W | 2 | 10 ns | 15ns | 15 ns | 50 ns | -3.1A | 20V | SILICON | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | 2 P-Channel (Dual) | -3 V | 120m Ω @ 3.1A, 10V | 3V @ 250μA | 2.4A | 22nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| IRF8313TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf8313trpbf-datasheets-4692.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No SVHC | 15.5MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF8313PBF | Dual | 2W | 2 | FET General Purpose Power | 8.3 ns | 9.9ns | 4.2 ns | 8.5 ns | 9.7A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 46 mJ | 30V | 2 N-Channel (Dual) | 760pF @ 15V | 1.8 V | 15.5m Ω @ 9.7A, 10V | 2.35V @ 25μA | 9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L26ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipg20n06s4l26atma1-datasheets-4878.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | 33W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 5 ns | 1.5ns | 10 ns | 18 ns | 20A | 16V | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | METAL-OXIDE SEMICONDUCTOR | 33W | 0.026Ohm | 35 mJ | 2 N-Channel (Dual) | 1430pF @ 25V | 26m Ω @ 17A, 10V | 2.2V @ 10μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4935A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fds4935a-datasheets-5104.pdf | -30V | -7A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | No SVHC | 23MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | 7A | e3 | 30V | 900mW | GULL WING | Dual | 1.6W | 2 | Other Transistors | 13 ns | 10ns | 25 ns | 48 ns | 7A | 20V | -30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1.6V | -30V | 2 P-Channel (Dual) | 1233pF @ 15V | -1.6 V | 23m Ω @ 7A, 10V | 3V @ 250μA | 21nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| FDD8424H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fdd8424h-datasheets-5195.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 6.73mm | 2.517mm | 6.22mm | Lead Free | 4 | 17 Weeks | 260.37mg | No SVHC | 24MOhm | 5 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 3.1W | SINGLE | GULL WING | FDD8424 | 2 | 3.1W | 2 | Other Transistors | 150°C | R-PSSO-G4 | 7 ns | 3ns | 3 ns | 20 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.7V | 1.3W | 9A | 40V | N and P-Channel | 1000pF @ 20V | 24m Ω @ 9A, 10V | 3V @ 250μA | 9A 6.5A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| ZXMHC3A01N8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zxmhc3a01n8tc-datasheets-5203.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 125mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 870mW | DUAL | GULL WING | 260 | ZXMHC3A01 | 8 | 40 | 1.36W | 4 | Other Transistors | 2.3ns | 2.9 ns | 12.1 ns | 1.64A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.17A | 2 N and 2 P-Channel (H-Bridge) | 190pF @ 25V | 125m Ω @ 2.5A, 10V | 3V @ 250μA | 2.17A 1.64A | 3.9nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IRF9358TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf9358trpbf-datasheets-5206.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF9358PBF | Dual | 2W | 2 | Other Transistors | 5.7 ns | 7.2ns | 69 ns | 146 ns | 9.2A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.8V | MS-012AA | 73A | 0.0163Ohm | 210 mJ | -30V | 2 P-Channel (Dual) | 1740pF @ 25V | -1.8 V | 16.3m Ω @ 9.2A, 10V | 2.4V @ 25μA | 38nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI4909DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4909dyt1ge3-datasheets-5118.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 8 | No | 3.2W | 2 | Dual | 2W | 2 | 150°C | 8-SO | 2nF | 10 ns | 9ns | 13 ns | 50 ns | -8A | 20V | 40V | -1.2V | 3.2W | 21mOhm | -40V | 2 P-Channel (Dual) | 2000pF @ 20V | 27mOhm @ 8A, 10V | 2.5V @ 250μA | 8A | 63nC @ 10V | Logic Level Gate | 27 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4931DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4931dyt1e3-datasheets-5063.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4931 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 25 ns | 46ns | 155 ns | 230 ns | 6.7A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -12V | 2 P-Channel (Dual) | 18m Ω @ 8.9A, 4.5V | 1V @ 350μA | 52nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8928A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds8928a-datasheets-5278.pdf | 5.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 8 Weeks | 230.4mg | No SVHC | 30MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | 2W | DUAL | GULL WING | 2W | 2 | Other Transistors | 23ns | 90 ns | 260 ns | 5.5A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 20V | METAL-OXIDE SEMICONDUCTOR | 670mV | 900mW | -20V | N and P-Channel | 900pF @ 10V | 670 mV | 30m Ω @ 5.5A, 4.5V | 1V @ 250μA | 5.5A 4A | 28nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI4925BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4925bdyt1e3-datasheets-5285.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | SI4925 | 8 | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W | 5.3A | 0.025Ohm | 2 P-Channel (Dual) | 25m Ω @ 7.1A, 10V | 3V @ 250μA | 5.3A | 50nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4925DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4925ddyt1ge3-datasheets-5125.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 29mOhm | 8 | EAR99 | No | 5W | GULL WING | SI4925 | 8 | 2 | Dual | 5W | 2 | 150°C | 10 ns | 35ns | 16 ns | 45 ns | -7.3A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | -30V | 2 P-Channel (Dual) | 1350pF @ 15V | -3 V | 29m Ω @ 7.3A, 10V | 3V @ 250μA | 8A | 50nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| ZXMHC6A07N8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zxmhc6a07n8tc-datasheets-5065.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 870mW | DUAL | GULL WING | 260 | ZXMHC6A07 | 8 | 40 | 1.36W | 4 | Other Transistors | 1.6 ns | 2.3ns | 5.8 ns | 13 ns | 1.28A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 1.39A | 0.25Ohm | -60V | 2 N and 2 P-Channel (H-Bridge) | 166pF @ 40V | 250m Ω @ 1.8A, 10V | 3V @ 250μA | 1.39A 1.28A | 3.2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI6926ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si6926adqt1e3-datasheets-4790.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 30mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 260 | SI6926 | 8 | 2 | Dual | 40 | 830mW | 2 | FET General Purpose Power | 6 ns | 16ns | 16 ns | 46 ns | 4.5A | 8V | SILICON | METAL-OXIDE SEMICONDUCTOR | 4.1A | 20V | 2 N-Channel (Dual) | 400 mV | 30m Ω @ 4.5A, 4.5V | 1V @ 250μA | 4.1A | 10.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FDS9958 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds9958-datasheets-5070.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 11 Weeks | 187mg | No SVHC | 105MOhm | 8 | ACTIVE (Last Updated: 6 hours ago) | yes | EAR99 | Tin | No | e3 | 900mW | GULL WING | Dual | 2W | 2 | Other Transistors | 6 ns | 3ns | 6 ns | 27 ns | -2.9A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | -1.6V | 65 pF | -60V | 2 P-Channel (Dual) | 1020pF @ 30V | 105m Ω @ 2.9A, 10V | 3V @ 250μA | 2.9A | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FDMA1028NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdma1028nz-datasheets-4686.pdf | 20V | 3.7A | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 40mg | No SVHC | 68MOhm | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | Dual | 1.4W | 2 | FET General Purpose Power | 8 ns | 8ns | 8 ns | 14 ns | 3.7A | 12V | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 700mW | 20V | 2 N-Channel (Dual) | 340pF @ 10V | 1 V | 68m Ω @ 3.7A, 4.5V | 1.5V @ 250μA | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| DMP4025LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4025lsd13-datasheets-4903.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 1.8W | GULL WING | 260 | DMP4025LSD | 40 | 1.8W | 2 | Other Transistors | 6.9 ns | 14.7ns | 30.9 ns | 53.7 ns | -7.6A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | -1.3V | 0.045Ohm | -40V | 2 P-Channel (Dual) | 1640pF @ 20V | 25m Ω @ 3A, 10V | 1.8V @ 250μA | 6.9A | 33.7nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4936BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4936bdyt1ge3-datasheets-1205.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 35mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4936 | 8 | 2 | Dual | 40 | 2W | 2 | FET General Purpose Power | 5 ns | 25ns | 25 ns | 12 ns | 6.9A | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 2.8W | 30A | 30V | 2 N-Channel (Dual) | 530pF @ 15V | 3 V | 35m Ω @ 5.9A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| FDS8949 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds8949-datasheets-4916.pdf | 40V | 6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 12 Weeks | 187mg | No SVHC | 29mOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | Dual | 2W | 2 | FET General Purpose Power | 9 ns | 5ns | 3 ns | 23 ns | 6A | 20V | 40V | SILICON | METAL-OXIDE SEMICONDUCTOR | 1.9V | 6A | 40V | 2 N-Channel (Dual) | 955pF @ 20V | 1.9 V | 29m Ω @ 6A, 10V | 3V @ 250μA | 11nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| DMHC3025LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmhc3025lsd13-datasheets-4888.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.7mm | 3.95mm | Lead Free | 8 | 18 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | Tin | e3 | AEC-Q101 | 1.5W | DUAL | GULL WING | 260 | DMHC3025LSD | 40 | 1.5W | 4 | Other Transistors | 150°C | 7.5 ns | 4.9ns | 13.5 ns | 28.2 ns | 4.2A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 2V | 6A | 60A | 0.025Ohm | -30V | 2 N and 2 P-Channel (H-Bridge) | 590pF @ 15V | 25m Ω @ 5A, 10V | 2V @ 250μA | 6A 4.2A | 11.7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| AO4616 | Alpha & Omega Semiconductor Inc. | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-ao4616-datasheets-9608.pdf | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 8 | No | 2W | 2W | 2 | Other Transistors | 7A | 20V | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 8A | N and P-Channel | 888pF @ 15V | 20m Ω @ 8A, 10V | 2.4V @ 250μA | 8A 7A | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP4050SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmp4050ssdq13-datasheets-1272.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.8W | GULL WING | 260 | DMP4050SSD | 8 | Dual | 40 | 2.14W | 2 | Other Transistors | 1.9 ns | 3.1ns | 12.6 ns | 31.5 ns | 5.2A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.05Ohm | -40V | 2 P-Channel (Dual) | 674pF @ 20V | 50m Ω @ 6A, 10V | 3V @ 250μA | 4A | 13.9nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| SI7232DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7232dnt1ge3-datasheets-4961.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.17mm | 3.05mm | Lead Free | 6 | 14 Weeks | 8 | yes | EAR99 | Tin | No | e3 | 23W | C BEND | 260 | SI7232 | 8 | 30 | 2.6W | 2 | FET General Purpose Power | 150°C | S-XDSO-C6 | 10 ns | 10ns | 10 ns | 35 ns | 10A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 40A | 0.0164Ohm | 11 mJ | 20V | 2 N-Channel (Dual) | 1220pF @ 10V | 16.4m Ω @ 10A, 4.5V | 1V @ 250μA | 25A | 32nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI9945BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si9945bdyt1ge3-datasheets-4914.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 58mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | GULL WING | 260 | SI9945 | 8 | 2 | Dual | 30 | 3.1W | 2 | FET General Purpose Powers | 150°C | 10 ns | 15ns | 10 ns | 20 ns | 4.3A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 5.3A | 60V | 2 N-Channel (Dual) | 665pF @ 15V | 2.5 V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| IRF7343TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7343trpbf-datasheets-5047.pdf | 4.7A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 50mOhm | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | Tin | No | e3 | 2W | DUAL | GULL WING | IRF7343PBF | 2 | 2W | 2 | 150°C | 8.3 ns | 10ns | 22 ns | 43 ns | 4.7A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 1V | 55V | N and P-Channel | 740pF @ 25V | 1 V | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 4.7A 3.4A | 36nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| AOD609 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/alphaomegasemiconductor-aod609-datasheets-9535.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | Lead Free | 16 Weeks | No | 2W | 2 | 12A | 40V | 2W | N and P-Channel, Common Drain | 650pF @ 20V | 30m Ω @ 12A, 10V | 3V @ 250μA | 10.8nC @ 10V | Logic Level Gate |
