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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| EFC8811R-TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-efc8811rtf-datasheets-6279.pdf | 6-SMD, No Lead | Lead Free | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | 2.5W | 2.3mOhm | 2 N-Channel (Dual) Common Drain | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7306TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/infineontechnologies-irf7306tr-datasheets-6364.pdf | -30V | -3.6A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | 2W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | 3.6A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | METAL-OXIDE SEMICONDUCTOR | 3A | 0.1Ohm | 2 P-Channel (Dual) | 440pF @ 25V | 100m Ω @ 1.8A, 10V | 1V @ 250μA | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87502Q2 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 12 Weeks | 6 | ACTIVE (Last Updated: 6 days ago) | yes | 750μm | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | 2.3W | NO LEAD | CSD87502 | Dual | 2 | 5A | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 5A | 23A | 29 pF | 3.1 mJ | 2 N-Channel (Dual) | 353pF @ 15V | 32.4m Ω @ 4A, 10V | 2V @ 250μA | 6nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SP8K31FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | Unknown | 8 | EAR99 | not_compliant | YES | 2W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 3.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 14A | 0.15Ohm | 2 N-Channel (Dual) | 250pF @ 10V | 120m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5A Ta | 5.2nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3098LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmp3098lsd13-datasheets-6151.pdf | 8-SOIC (0.154, 3.90mm Width) | 5.3mm | 1.5mm | 4.1mm | 8 | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.8W | GULL WING | 260 | 8 | 40 | 1.8W | 2 | Other Transistors | 6 ns | 5ns | 5 ns | 17.6 ns | 4.4A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.065Ohm | 30V | 2 P-Channel (Dual) | 336pF @ 25V | 65m Ω @ 5A, 10V | 2.1V @ 250μA | 7.8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| PMCM650CUNEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2017 | /files/nexperiausainc-pmcm650cunez-datasheets-6100.pdf | 6-XFBGA, WLCSP | 13 Weeks | 556mW Ta | 2 N-Channel (Dual) Common Drain | 900mV @ 250μA | 13nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8J13TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 8-SMD, Flat Lead | 8 | 20 Weeks | 15mOhm | 8 | EAR99 | not_compliant | 1.25W | NOT SPECIFIED | NOT SPECIFIED | 2 | 5.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 1.25W | 2 P-Channel (Dual) | 6300pF @ 6V | 22m Ω @ 5.5A, 4.5V | 1V @ 1mA | 60nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3025LSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmc3025lsdq13-datasheets-6081.pdf | 8-SOIC (0.154, 3.90mm Width) | 19 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.2W Ta | N and P-Channel | 501pF 590pF @ 15V 25V | 20m Ω @ 7.4A, 10V, 45m Ω @ 5.2A, 10V | 2V @ 250μA | 6.5A Ta 4.2A Ta | 4.6nC, 5.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4286DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4286dyt1ge3-datasheets-5839.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | 540.001716mg | No SVHC | 8 | EAR99 | No | 2.9W | GULL WING | SI4286 | 8 | Dual | 1.9W | 2 | FET General Purpose Power | 9 ns | 11ns | 7 ns | 10 ns | 7A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 7A | 40V | 2 N-Channel (Dual) | 375pF @ 20V | 32.5m Ω @ 8A, 10V | 2.5V @ 250μA | 10.5nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| HS8K11TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-UDFN Exposed Pad | 8 | 20 Weeks | EAR99 | not_compliant | 2W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N8 | 11A | SILICON | COMPLEX | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 28A | 0.0291Ohm | 3.6 mJ | 2 N-Channel (Dual) | 500pF @ 15V | 17.9m Ω @ 7A, 10V | 2.5V @ 1mA | 7A 11A | 11.1nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM200N03DPQ33 RGG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm200n03dpq33rgg-datasheets-5883.pdf | 8-PowerWDFN | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 20W | 2 N-Channel (Dual) | 345pF @ 25V | 20m Ω @ 10A, 10V | 2.5V @ 250μA | 20A Tc | 4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3015LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn3015lsd13-datasheets-5953.pdf | 8-SOIC (0.154, 3.90mm Width) | 23 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | 1.2W | 260 | 30 | 8.4A | 30V | 2 N-Channel (Dual) | 1415pF @ 15V | 15m Ω @ 12A, 10V | 2.5V @ 250μA | 8.4A Ta | 25.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VEC2315-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/onsemiconductor-vec2315tlw-datasheets-6103.pdf | 8-SMD, Flat Lead | Lead Free | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 11 hours ago) | yes | not_compliant | 1W | 2.5A | 60V | -2.6V | 1W | 2 P-Channel (Dual) | 420pF @ 20V | 137m Ω @ 1.5A, 10V | 2.6V @ 1mA | 11nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8M31TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-qs8m31tr-datasheets-6115.pdf | 8-SMD, Flat Lead | 8 | 16 Weeks | EAR99 | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 1.1W Ta | 3A | 6A | 0.137Ohm | 1.4 mJ | N and P-Channel | 270pF 750pF @ 10V | 112m Ω @ 3A, 10V, 210m Ω @ 2A, 10V | 2.5V @ 1mA, 3V @ 1mA | 3A Ta 2A Ta | 4nC, 7.2nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMC3F31DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-zxmc3f31dn8ta-datasheets-6109.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 17 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | DUAL | GULL WING | 260 | 8 | 40 | 2.1W | 2 | Other Transistors | 1.9 ns | 3ns | 21 ns | 30 ns | 4.9A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 5.7A | -30V | N and P-Channel | 608pF @ 15V | 24m Ω @ 7A, 10V | 3V @ 250μA | 6.8A 4.9A | 12.9nC @ 10V | Logic Level Gate, 4.5V Drive | |||||||||||||||||||||||||||||||||||||||||
| DMP3056LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp3056lsd13-datasheets-6056.pdf | 8-SOIC (0.154, 3.90mm Width) | 5.3mm | 1.5mm | 4.1mm | Lead Free | 8 | 16 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2.5W | GULL WING | 260 | DMP3056LSD | 8 | 40 | 2.5W | 2 | Other Transistors | 6.4 ns | 5.3ns | 14.7 ns | 26.5 ns | 6.9A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 2 P-Channel (Dual) | 722pF @ 25V | 45m Ω @ 6A, 10V | 2.1V @ 250μA | 13.7nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| ZDM4306NTA | Diodes Incorporated | $1.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zdm4306nta-datasheets-6098.pdf | 60V | 1.3A | SOT-223-8 | Contains Lead | 10 | EAR99 | unknown | e3 | MATTE TIN | 3W | DUAL | GULL WING | 260 | 2 | 10 | 3W | 2 | Not Qualified | R-PDSO-G10 | 350pF | 8 ns | 25ns | 16 ns | 30 ns | 2A | 20V | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 2A | 450mOhm | 30 pF | 60V | 330 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SQ3985EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq3985evt1ge3-datasheets-6138.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3W | MO-193AA | 3.9A | 0.145Ohm | 57 pF | 2 P-Channel (Dual) | 350pF @ 10V | 145m Ω @ 2.8A, 4.5V | 1.5V @ 250μA | 3.9A Tc | 4.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3590DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si3590dvt1e3-datasheets-5561.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 170MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | DUAL | GULL WING | 260 | SI3590 | 6 | 2 | 40 | 830mW | 2 | Other Transistors | 150°C | 5 ns | 15ns | 15 ns | 20 ns | 2.5A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 30V | N and P-Channel | 600 mV | 77m Ω @ 3A, 4.5V | 1.5V @ 250μA | 2.5A 1.7A | 4.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI4559ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4559adyt1e3-datasheets-2899.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | 58MOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.4W | DUAL | GULL WING | 260 | SI4559 | 8 | 2 | 30 | 2W | 2 | Other Transistors | 30 ns | 70ns | 30 ns | 40 ns | 4.5A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.1W 3.4W | 4.3A | 6.1 mJ | 60V | N and P-Channel | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A 3.9A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SIS932EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sis932ednt1ge3-datasheets-5907.pdf | PowerPAK® 1212-8 Dual | 1.17mm | 14 Weeks | 2 | 2.6W | 150°C | PowerPAK® 1212-8 Dual | 15 ns | 32 ns | 6A | 12V | 30V | 2.6W Ta 23W Tc | 18mOhm | 30V | 2 N-Channel (Dual) | 1000pF @ 15V | 22mOhm @ 10A, 4.5V | 1.4V @ 250μA | 6A Tc | 14nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA923AEDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sia923aedjt1ge3-datasheets-5929.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | EAR99 | 7.8W | NO LEAD | SIA923 | 2 | Dual | 2 | 15 ns | 16ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -900mV | 0.054Ohm | -20V | 2 P-Channel (Dual) | 770pF @ 10V | 54m Ω @ 3.8A, 4.5V | 900mV @ 250μA | 25nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| US6K2TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-us6k2tr-datasheets-5934.pdf | 30V | 1.4A | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | 380MOhm | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 1W | 260 | *K2 | 6 | Dual | 10 | 1W | 2 | FET General Purpose Power | 6 ns | 6ns | 8 ns | 13 ns | 1.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 70pF @ 10V | 240m Ω @ 1.4A, 10V | 2.5V @ 1mA | 2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SIA923EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia923edjt1ge3-datasheets-5895.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 54mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 7.8W | 260 | SIA923 | 6 | 2 | Dual | 40 | 1.9W | 2 | Other Transistors | 15 ns | 16ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | -500 mV | 54m Ω @ 3.8A, 4.5V | 1.4V @ 250μA | 25nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| CSD88537ND | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 540.001716mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.58mm | EAR99 | AVALANCHE RATED | Gold | No | e4 | 2.1W | GULL WING | 260 | CSD88537 | Dual | 2.1W | 2 | 6 ns | 15ns | 19 ns | 9 ns | 15A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 3V | 8A | 0.019Ohm | 60V | 2 N-Channel (Dual) | 1400pF @ 30V | 15m Ω @ 8A, 10V | 3.6V @ 250μA | 18nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| FDG1024NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdg1024nz-datasheets-5758.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e3 | 360mW | GULL WING | NOT SPECIFIED | Dual | NOT SPECIFIED | 360mW | 2 | FET General Purpose Power | Not Qualified | 3.7 ns | 1.7ns | 1.5 ns | 11 ns | 1.2A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 800mV | 300mW | 0.175Ohm | 20V | 2 N-Channel (Dual) | 150pF @ 10V | 800 mV | 175m Ω @ 1.2A, 4.5V | 1V @ 250μA | 2.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| DMC4050SSD-13 | Diodes Incorporated | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmc4050ssd13-datasheets-5753.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 2.14W | DUAL | GULL WING | 260 | DMC4050 | 8 | 2 | 40 | 2.14W | 2 | Other Transistors | 8.08 ns | 15.14ns | 5.27 ns | 24.29 ns | 5.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 1.8W | 0.06Ohm | N and P-Channel | 1790.8pF @ 20V | 45m Ω @ 3A, 10V | 1.8V @ 250μA | 5.3A | 37.56nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SIA929DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia929djt1ge3-datasheets-5811.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | 6 | EAR99 | No | 1.9W | 6 | 2 | Dual | 1.9W | 1 | Other Transistors | 5 ns | 10ns | 10 ns | 22 ns | 4.3A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7.8W | 4.5A | -30V | 2 P-Channel (Dual) | 575pF @ 15V | 64m Ω @ 3A, 10V | 1.1V @ 250μA | 4.5A Tc | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SIA975DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia975djt1ge3-datasheets-5566.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 41mOhm | 6 | EAR99 | Tin | No | 7.8W | SIA975 | 6 | Dual | 1.9W | 2 | Other Transistors | 22 ns | 22ns | 15 ns | 32 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -400mV | -12V | 2 P-Channel (Dual) | 1500pF @ 6V | 41m Ω @ 4.3A, 4.5V | 1V @ 250μA | 26nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| DMN4031SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn4031ssd13-datasheets-5807.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 15 Weeks | 73.992255mg | No SVHC | 31mOhm | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.42W | GULL WING | 260 | DMN4031 | 8 | Dual | 40 | 2.6W | 2 | FET General Purpose Power | 6.4 ns | 9.7ns | 3.1 ns | 19.8 ns | 5.2A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 7A | 40V | 2 N-Channel (Dual) | 945pF @ 20V | 31m Ω @ 6A, 10V | 3V @ 250μA | 18.6nC @ 10V | Logic Level Gate |
