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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SQJ942EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqj942ept1ge3-datasheets-7636.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 17W 48W | 15A | 60A | 0.022Ohm | 18.5 mJ | 2 N-Channel (Dual) | 809pF @ 20V 1451pF @ 20V | 22m Ω @ 7.8A, 10V, 11m Ω @ 10.1A, 10V | 2.3V @ 250μA | 15A Tc 45A Tc | 19.7nC @ 10V, 33.8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3600S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3600s-datasheets-8063.pdf | 5mm | 1.05mm | 6mm | 7 | 13 Weeks | 171mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | QUAD | Dual | 2.5W | 2 | FET General Purpose Power | R-PQFP-N7 | 1.68nF | 5.3ns | 3.9 ns | 38 ns | 30A | 20V | DRAIN SOURCE | SWITCHING | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 15A | 1.6mOhm | 90 pF | 25V | 1.8 V | 5.6 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| CSD85302LT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 4-XFLGA | 1.35mm | 1.35mm | Lead Free | 4 | 6 Weeks | No SVHC | 4 | ACTIVE (Last Updated: 5 days ago) | yes | 200μm | 1.7W | BOTTOM | NO LEAD | CSD85302 | 2 | 37 ns | 54ns | 99 ns | 173 ns | 7A | 10V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 900mV | 24mOhm | 79 pF | 2 N-Channel (Dual) Common Drain | 7.8nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7904BDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7904bdnt1ge3-datasheets-7920.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 30MOhm | 8 | yes | EAR99 | Tin | No | e3 | 2.5W | C BEND | 260 | SI7904 | 8 | 2 | Dual | 40 | 2.5W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 15ns | 5 ns | 25 ns | 6A | 8V | SILICON | DRAIN | AMPLIFIER | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 17.8W | 6A | 20V | 2 N-Channel (Dual) | 860pF @ 10V | 30m Ω @ 7.1A, 4.5V | 1V @ 250μA | 24nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SQJB42EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb42ept1ge3-datasheets-7973.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 48W | 30A | 120A | 0.0095Ohm | 31 mJ | 2 N-Channel (Dual) | 1500pF @ 25V | 9.5m Ω @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6992 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 8-PowerWDFN | 18 Weeks | 8 | yes | 3.1W | NOT SPECIFIED | NOT SPECIFIED | 31A | 30V | 2 N-Channel (Dual) Asymmetrical | 820pF @ 15V | 5.2m Ω @ 20A, 10V | 2.2V @ 250μA | 19A 31A | 13nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA3027PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdma3027pz-datasheets-7975.pdf | 6-VDFN Exposed Pad | 2mm | 725μm | 2mm | Lead Free | 6 | 16 Weeks | 40mg | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | NO LEAD | NOT SPECIFIED | Dual | NOT SPECIFIED | 1.4W | 2 | Other Transistors | 5.2 ns | 3ns | 11 ns | 17 ns | 3.3A | 25V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.9V | 700mW | 0.087Ohm | 80 pF | -30V | 2 P-Channel (Dual) | 435pF @ 15V | 87m Ω @ 3.3A, 10V | 3V @ 250μA | 10nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| BUK7K45-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk7k45100ex-datasheets-7956.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 53W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | R-PDSO-G6 | 21.4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 53W | 0.0376Ohm | 46 mJ | 2 N-Channel (Dual) | 1533pF @ 25V | 37.6m Ω @ 5A, 10V | 4V @ 1mA | 25.9nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M13GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 10 Weeks | 30V | 2W | N and P-Channel | 1200pF @ 10V | 29m Ω @ 7A, 10V | 2.5V @ 1mA | 6A 7A | 18nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS9952A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nds9952a-datasheets-7848.pdf | 2.9A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 230.4mg | No SVHC | 80MOhm | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 900mW | GULL WING | Dual | 2W | 2 | Other Transistors | 21ns | 8 ns | 21 ns | 3.7A | 20V | 30V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.7V | 15A | 30V | N and P-Channel | 320pF @ 10V | 1.7 V | 80m Ω @ 1A, 10V | 2.8V @ 250μA | 3.7A 2.9A | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SIZ320DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-siz320dtt1ge3-datasheets-7454.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 16.7W 31W | 25V | 2 N-Channel (Dual) | 660pF @ 12.5V 1370pF @ 12.5V | 8.3m Ω @ 8A, 10V, 4.24m Ω @ 10A, 10V | 2.4V @ 250μA | 30A Tc 40A Tc | 8.9nC @ 4.5V, 11.9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH6022SSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmnh6022ssdq13-datasheets-7867.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 18 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 1.5W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | 22.6A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 7.1A | 45A | 0.03Ohm | 24 mJ | 2 N-Channel (Dual) | 2127pF @ 25V | 27m Ω @ 5A, 10V | 3V @ 250μA | 7.1A 22.6A | 32nC @ 30V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB80EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb80ept1ge3-datasheets-7905.pdf | PowerPAK® SO-8 Dual | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | 48W | 2 | 175°C | R-PSSO-G4 | 10 ns | 23 ns | 30A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 84A | 0.019Ohm | 80V | 2 N-Channel (Dual) | 1400pF @ 25V | 19m Ω @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 32nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K52GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 1.4W Ta | 2 N-Channel (Dual) | 610pF @ 25V | 170m Ω @ 3A, 10V | 2.5V @ 1mA | 3A Ta | 8.5nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QH8M22TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-qh8m22tcr-datasheets-7909.pdf | 8-SMD, Flat Lead | 8 | 16 Weeks | EAR99 | not_compliant | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 1.1W Ta | 4.5A | 18A | 0.059Ohm | 1.6 mJ | N and P-Channel | 193pF 450pF @ 20V | 46m Ω @ 4.5A, 10V, 190m Ω @ 2A, 10V | 2.5V @ 10μA, 3V @ 1mA | 4.5A Ta 2A Ta | 2.6nC, 9.5nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2110ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/epc-epc2110engrt-datasheets-7777.pdf | Die | 16 Weeks | Die | 80pF | 3.4A | 120V | 2 N-Channel (Dual) Common Source | 80pF @ 60V | 60mOhm @ 4A, 5V | 2.5V @ 700μA | 3.4A | 0.8nC @ 5V | GaNFET (Gallium Nitride) | 60 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ914EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqj914ept1ge3-datasheets-7918.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 30V | 27W Tc | 9.8mOhm | 2 N-Channel (Dual) | 1110pF @ 15V | 12mOhm @ 4.5A, 10V | 2.5V @ 250μA | 30A Tc | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8J1TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/rohmsemiconductor-qs8j1tr-datasheets-7732.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 52 Weeks | 8 | yes | EAR99 | No | e2 | TIN COPPER | 1.25W | 260 | *J1 | 8 | 10 | 1.5W | 2 | Other Transistors | 12 ns | 75ns | 215 ns | 390 ns | 4.5A | 10V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 0.029Ohm | -12V | 2 P-Channel (Dual) | 2450pF @ 6V | 29m Ω @ 4.5A, 4.5V | 1V @ 1mA | 31nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| FDZ1323NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdz1323nz-datasheets-7841.pdf | 6-XFBGA, WLCSP | 2.3mm | 150μm | 1.3mm | 6 | 10 Weeks | 50mg | 6 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 2W | BOTTOM | BALL | Single | 2W | 2 | FET General Purpose Power | 12 ns | 13ns | 13 ns | 34 ns | 10A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 500mW | 380 pF | 20V | 2 N-Channel (Dual) Common Drain | 2055pF @ 10V | 13m Ω @ 1A, 4.5V | 1.2V @ 250μA | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| TSM8588CS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm8588csrlg-datasheets-7764.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 1.4W Ta 5.7W Tc | N and P-Channel Complementary | 527pF @ 30V 436pF @ 30V | 103m Ω @ 2.5A, 10V, 180m Ω @ 2A, 10V | 2.5V @ 250μA | 2.5A Ta 5A Tc 2A Ta 4A Tc | 9.4nC @ 10V, 9nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87312Q3E | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 7 | 6 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 900μm | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | Gold | not_compliant | e4 | 2.5W | NO LEAD | 260 | CSD87312 | Dual | NOT SPECIFIED | 2.5W | 2 | FET General Purpose Powers | 7.8 ns | 16ns | 2.8 ns | 17 ns | 27A | 10V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 45A | 16 pF | 30V | 2 N-Channel (Dual) Common Source | 1250pF @ 15V | 33m Ω @ 7A , 8V | 1.3V @ 250μA | 8.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| EFC4K110NUZTDG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-efc4k110nuztdg-datasheets-7767.pdf | 10-SMD, No Lead | 13 Weeks | yes | 24V | 2.5W | 2 N-Channel (Dual) Common Drain | 25A | 49nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN1250UFEL-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn1250ufel7-datasheets-7575.pdf | 12-UFQFN Exposed Pad | 12 | 22 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 660mW | QUAD | NO LEAD | 8 | S-PQCC-N12 | 2A | SILICON | COMPLEX | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 660mW | 2A | 0.45Ohm | 13 pF | 8 N-Channel, Common Gate, Common Source | 190pF @ 6V | 450m Ω @ 200mA, 4.5V | 1V @ 250μA | 1.9nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL50DN6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl50dn6f7-datasheets-7656.pdf | 8-PowerVDFN | Lead Free | 6 | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) | 62.5W | FLAT | 260 | STL50 | NOT SPECIFIED | 2 | R-PDSO-F6 | 57A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 0.011Ohm | 2 N-Channel (Dual) | 1035pF @ 30V | 11m Ω @ 7.5A, 10V | 4V @ 250μA | 57A Tc | 17nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ844AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj844aept1ge3-datasheets-7678.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 8A | 30V | 48W | 2 N-Channel (Dual) | 1161pF @ 15V | 16.6m Ω @ 7.6A, 10V | 2.5V @ 250μA | 26nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K33FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | Unknown | 8 | EAR99 | not_compliant | YES | 2W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 5A | 20A | 0.056Ohm | 2 N-Channel (Dual) | 620pF @ 10V | 48m Ω @ 5A, 10V | 2.5V @ 1mA | 5A Ta | 12nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD86311W1723 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 12-UFBGA, DSBGA | 0m | 625μm | 0m | Contains Lead | 12 | 6 Weeks | No SVHC | 12 | ACTIVE (Last Updated: 3 days ago) | yes | 375μm | EAR99 | 8541.29.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.5W | BOTTOM | BALL | 260 | CSD86311 | 12 | Dual | NOT SPECIFIED | 1.5W | 2 | FET General Purpose Power | Not Qualified | 5.4 ns | 4.3ns | 2.9 ns | 13.2 ns | 4.5A | 10V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.051Ohm | 13 pF | 25V | 2 N-Channel (Dual) | 585pF @ 12.5V | 1 V | 39m Ω @ 2A, 8V | 1.4V @ 250μA | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| AON6998 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 8-PowerWDFN | 18 Weeks | 8 | yes | 3.1W | NOT SPECIFIED | NOT SPECIFIED | 26A | 30V | 2 N-Channel (Dual) Asymmetrical | 820pF @ 15V | 5.2m Ω @ 20A, 10V | 2.2V @ 250μA | 19A 26A | 13nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6892A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fds6892a-datasheets-7538.pdf | 20V | 7.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 18MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | Dual | 2W | 2 | FET General Purpose Power | 8 ns | 15ns | 9 ns | 26 ns | 7.5A | 12V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 900mV | 900mW | 30A | 20V | 2 N-Channel (Dual) | 1333pF @ 10V | 900 mV | 18m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI4532DY | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-si4532dy-datasheets-7598.pdf | 30V | 3.9A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 8 Weeks | 230.4mg | No SVHC | 65MOhm | 8 | ACTIVE (Last Updated: 16 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | DUAL | GULL WING | SI4532D | 2W | 2 | Other Transistors | 18 ns | 8ns | 6 ns | 18 ns | 3.9A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3V | 900mW | 30V | N and P-Channel | 235pF @ 10V | 3 V | 65m Ω @ 3.9A, 10V | 3V @ 250μA | 3.9A 3.5A | 15nC @ 10V | Standard |
