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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Max Input Voltage | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Max Output Voltage | Min Input Voltage | Output Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | JEDEC-95 Code | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| ZXMN6A09DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-zxmn6a09dn8ta-datasheets-9099.pdf | 60V | 4.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | 40 | 2.1W | 2 | FET General Purpose Power | 4.9 ns | 5ns | 4.6 ns | 25.3 ns | 5.6A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.25W | 4.3A | 60V | 2 N-Channel (Dual) | 1407pF @ 40V | 40m Ω @ 8.2A, 10V | 3V @ 250μA | 4.3A | 24.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87335Q3DT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/texasinstruments-csd87335q3dt-datasheets-0393.pdf | 8-PowerLDFN | 3.3mm | 3.3mm | Contains Lead | 8 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | 1.5mm | not_compliant | 1 | e3 | Matte Tin (Sn) | 6W | NO LEAD | 260 | 0.65mm | CSD87335 | SWITCHING CONTROLLER | NOT SPECIFIED | 20mA | 25A | 30V | 750mV | 12V | 27V | PULSE WIDTH MODULATION | BUCK | 6.7mOhm | 1500kHz | 2 N-Channel (Dual) | 1050pF @ 15V | 1.9V @ 250μA | 7.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5504BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 140mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | DUAL | C BEND | 260 | SI5504 | 8 | 2 | 40 | 1.5W | 2 | Other Transistors | 4 ns | 10ns | 5 ns | 10 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.12W 3.1W | 4A | 10A | 30V | N and P-Channel | 220pF @ 15V | 65m Ω @ 3.1A, 10V | 3V @ 250μA | 4A 3.7A | 7nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMHC6070LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmhc6070lsd13-datasheets-8992.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 19 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 1.6W | DUAL | GULL WING | 4 | 2.4A | SILICON | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3.1A | 15A | 0.1Ohm | 2 N and 2 P-Channel (H-Bridge) | 731pF @ 20V | 100m Ω @ 1A, 10V | 3V @ 250μA | 3.1A 2.4A | 11.5nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87588NT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 5-LGA | 5mm | 480μm | 2.5mm | Lead Free | 5 | 8 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | 400μm | EAR99 | Gold | 1 | 24V | e4 | 6W | BOTTOM | NO LEAD | 260 | CSD87588 | 2 | SWITCHING REGULATOR | Dual | NOT SPECIFIED | 25A | 1.3V | -800mV | Adjustable | 12.1 ns | 36.7ns | 6.3 ns | 20.1 ns | 25A | 20V | 30V | 1 | 12V | PULSE WIDTH MODULATION | BUCK | 30V | 2 N-Channel (Half Bridge) | 736pF @ 15V | 9.6m Ω @ 15A, 10V | 1.9V @ 250μA | 4.1nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K32TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8k32gzetb-datasheets-1391.pdf | 8-SOIC (0.154, 3.90mm Width) | 17 Weeks | 8 | 2W | *K32 | 2W | 4.5A | 60V | 60V | 2 N-Channel (Dual) | 500pF @ 10V | 65m Ω @ 4.5A, 10V | 2.5V @ 1mA | 10nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0911NDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0911ndatma1-datasheets-8980.pdf | 8-PowerTDFN | Lead Free | 6 | 18 Weeks | 8 | no | EAR99 | Tin | No | e3 | 1W | Dual | 2.5W | 2 | FET General Purpose Power | R-PDSO-N6 | 5.4ns | 4 ns | 25 ns | 30A | 20V | SILICON | DRAIN SOURCE | METAL-OXIDE SEMICONDUCTOR | 25V | 2 N-Channel (Dual) Asymmetrical | 1600pF @ 12V | 3.2m Ω @ 20A, 10V | 2V @ 250μA | 18A 30A | 12nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7309QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7309qtr-datasheets-8936.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 8 Weeks | No SVHC | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.4W | GULL WING | Dual | 1.4W | 2 | Other Transistors | 3A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4A | 16A | 0.05Ohm | 30V | N and P-Channel | 520pF @ 15V | 1 V | 50m Ω @ 2.4A, 10V | 3V @ 250μA | 4A 3A | 25nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S2L35AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n06s2l35aatma1-datasheets-8691.pdf | 8-PowerVDFN | Contains Lead | 10 Weeks | 8 | Halogen Free | 65W | 65W | 2 | PG-TDSON-8-10 | 790pF | 20A | 20V | 55V | 55V | 65W | 28mOhm | 2 N-Channel (Dual) | 790pF @ 25V | 35mOhm @ 15A, 10V | 2V @ 27μA | 2A Tc | 23nC @ 10V | Logic Level Gate | 35 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8935 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds8935-datasheets-8705.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | 8 | 11 Weeks | 187mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | 3.1W | GULL WING | Dual | 3.1W | 2 | Other Transistors | 5 ns | 3ns | 3 ns | 22 ns | 2.1A | 20V | SILICON | SWITCHING | 80V | METAL-OXIDE SEMICONDUCTOR | -1.8V | 1.6W | 36 pF | -80V | 2 P-Channel (Dual) | 879pF @ 40V | -1.8 V | 183m Ω @ 2.1A, 10V | 3V @ 250μA | 19nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C672NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c672nlwft1g-datasheets-8712.pdf | 8-PowerTDFN | 6 | 48 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3.1W Ta 45W Tc | 146A | 0.0168Ohm | 66 mJ | 2 N-Channel (Dual) | 793pF @ 25V | 11.9m Ω @ 10A, 10V | 2.2V @ 30μA | 12A Ta 49A Tc | 5.7nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4007SPD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4007spd13-datasheets-8742.pdf | 8-PowerTDFN | 23 Weeks | 8 | 2.6W | PowerDI5060-8 | 2.026nF | 14.2A | 40V | 2.6W | 2 N-Channel (Dual) | 2026pF @ 30V | 8.6mOhm @ 17A, 10V | 4V @ 250μA | 14.2A | 41.9nC @ 10V | Standard | 8.6 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLLD4901NFTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntlld4901nftwg-datasheets-8746.pdf | 8-PowerWDFN | Lead Free | 11 Weeks | No SVHC | 17.4MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 810mW | 8 | Dual | 3.23W | FET General Purpose Power | 6.3A | 20V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 800mW 810mW | 9.6A | 30V | 2 N-Channel (Dual) | 605pF @ 15V | 17.4m Ω @ 9A, 10V | 2.2V @ 250μA | 5.5A 6.3A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K1TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8k1tb1-datasheets-8237.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | 2W | *K1 | 2W | 8-SOP | 230pF | 5A | 30V | 2W | 58mOhm | 30V | 2 N-Channel (Dual) | 230pF @ 10V | 51mOhm @ 5A, 10V | 2.5V @ 1mA | 5A | 5.5nC @ 5V | Logic Level Gate | 51 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8200S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc8200s-datasheets-8536.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | Lead Free | 8 | 23 Weeks | 186mg | No SVHC | 20MOhm | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1W | 2.5W | 2 | FET General Purpose Power | 35 ns | 18A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 700mW 1W | 6A | 30 pF | 30V | 2 N-Channel (Dual) | 660pF @ 15V | 2.3 V | 20m Ω @ 6A, 10V | 3V @ 250μA | 6A 8.5A | 10nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQS4903TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqs4903tf-datasheets-8716.pdf | 500V | 370mA | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 5 Weeks | 230.4mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | FQS4903 | Dual | 2W | 2 | FET General Purpose Power | 5.5 ns | 20ns | 45 ns | 20 ns | 370mA | 25V | 500V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.37A | 500V | 2 N-Channel (Dual) | 200pF @ 25V | 4 V | 6.2 Ω @ 185mA, 10V | 4V @ 250μA | 8.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCAB21520L1 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/panasonicelectroniccomponents-fcab21520l1-datasheets-8856.pdf | 10-SMD, No Lead | 16 Weeks | 10-SMD | 3.8W Ta | 2 N-Channel (Dual) | 5250pF @ 10V | 1.4V @ 1.64mA | 38nC @ 4V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMB2308PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmb2308pz-datasheets-8883.pdf | 6-WDFN Exposed Pad | 3mm | 725μm | 2mm | Lead Free | 6 | 16 Weeks | 12.0024mg | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2W | 2 | Other Transistors | 14 ns | 33ns | 58 ns | 74 ns | 7A | 12V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | METAL-OXIDE SEMICONDUCTOR | 800mW | MO-229 | 510 pF | -20V | 2 P-Channel (Dual) Common Drain | 3030pF @ 10V | 36m Ω @ 5.7A, 4.5V | 1.5V @ 250μA | 30nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7900AEDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7900aednt1e3-datasheets-8896.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | C BEND | 260 | SI7900 | 8 | Dual | 40 | 1.5W | 2 | FET General Purpose Power | S-XDSO-C5 | 850 ns | 1.3μs | 1.3 μs | 8.6 μs | 8.5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6A | 30A | 20V | 2 N-Channel (Dual) Common Drain | 26m Ω @ 8.5A, 4.5V | 900mV @ 250μA | 6A | 16nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N10S4L22ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 1997 | /files/infineontechnologies-ipg20n10s4l22atma1-datasheets-8875.pdf | 8-PowerVDFN | 1mm | Contains Lead | 12 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | 60W | NOT SPECIFIED | NOT SPECIFIED | 60W | 2 | 175°C | 5 ns | 3ns | 18 ns | 30 ns | 20A | 16V | 100V | 100V | 2 N-Channel (Dual) | 1755pF @ 25V | 22m Ω @ 17A, 10V | 2.1V @ 25μA | 27nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3900DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3900dvt1e3-datasheets-4514.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | 6 | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3900 | 6 | Dual | 30 | 830mW | 2 | 10 ns | 30ns | 6 ns | 14 ns | 2.4A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 2A | 20V | 2 N-Channel (Dual) | 125m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 2A | 4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF906DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sizf906dtt1ge3-datasheets-8842.pdf | 8-PowerWDFN | 6 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 38W Tc 83W Tc | 60A | 80A | 0.0038Ohm | 16 mJ | 2 N-Channel (Half Bridge) | 2000pF @ 15V 8200pF @ 15V | 3.8m Ω @ 15A, 10V, 1.17m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 22nC @ 4.5V, 92nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3622S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3622s-datasheets-8927.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.1mm | 6 | 13 Weeks | 171mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | Dual | 2.5W | 2 | FET General Purpose Power | R-PDSO-N6 | 7 ns | 23 ns | 34A | 12V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 17.5A | 0.005Ohm | 25V | 2 N-Channel (Dual) Asymmetrical | 1570pF @ 13V | 5m Ω @ 17.5A, 10V | 2V @ 250μA | 17.5A 34A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD85312Q3E | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd85312q3e-datasheets-0274.pdf | 8-PowerVDFN | 3.3mm | 3.3mm | Contains Lead | 4 | 8 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 900μm | EAR99 | AVALANCHE RATED | Gold | e4 | 2.5W | NO LEAD | 260 | CSD85312 | NOT SPECIFIED | 2.5W | 2 | FET General Purpose Power | 11 ns | 27ns | 6 ns | 24 ns | 39A | 10V | SILICON | COMPLEX | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 76A | 40 pF | 20V | 2 N-Channel (Dual) Common Source | 2390pF @ 10V | 12.4m Ω @ 10A, 8V | 1.4V @ 250μA | 15.2nC @ 4.5V | Logic Level Gate, 5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM6968DCA RVG | Taiwan Semiconductor Corporation | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2007 | /files/taiwansemiconductorcorporation-tsm6968dcarvg-datasheets-8448.pdf | 8-TSSOP (0.173, 4.40mm Width) | 20 Weeks | 20V | 1.04W | 2 N-Channel (Dual) | 950pF @ 10V | 22m Ω @ 6A, 4.5V | 1V @ 250μA | 6.5A Tc | 15nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM7002AJ TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm7002agtrpbfree-datasheets-6962.pdf | SOT-563, SOT-666 | 42 Weeks | YES | FET General Purpose Power | 0.35W | 60V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.28A | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 280mA | 0.59nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMD4820NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntmd4820nr2g-datasheets-8288.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 2 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | 1.29W | GULL WING | NTMD4820N | 8 | Dual | 1.28W | 1 | FET General Purpose Power | 9.4 ns | 4ns | 4 ns | 21 ns | 6.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 750mW | 4.9A | 0.02Ohm | 30V | 2 N-Channel (Dual) | 940pF @ 15V | 20m Ω @ 7.5A, 10V | 3V @ 250μA | 4.9A | 7.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVLJD4007NZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvljd4007nztag-datasheets-8476.pdf | 6-WDFN Exposed Pad | Lead Free | 2 Weeks | 6 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 755mW | 6 | Dual | 755mW | 2 | FET General Purpose Power | 9 ns | 41ns | 72 ns | 96 ns | 245mA | 10V | 30V | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 20pF @ 5V | 7 Ω @ 125mA, 4.5V | 1.5V @ 100μA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH6042SSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmnh6042ssdq13-datasheets-8497.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 18 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2.1W | 5.3A | 35A | 0.05Ohm | 65 mJ | 2 N-Channel (Dual) | 584pF @ 25V | 50m Ω @ 5.1A, 10V | 3V @ 250μA | 16.7A Tc | 4.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7602S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7602s-datasheets-0282.pdf | 8-PowerWDFN | 5mm | 700μm | 6mm | Lead Free | 6 | 16 Weeks | 211mg | No SVHC | 7.5MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | No | e4 | 2.5W | 1W | 2 | FET General Purpose Power | R-PDSO-N6 | 3.8ns | 3.2 ns | 27 ns | 17A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.8V | 40A | 30V | 2 N-Channel (Dual) | 1750pF @ 15V | 1.8 V | 7.5m Ω @ 12A, 10V | 3V @ 250μA | 12A 17A | 28nC @ 10V | Logic Level Gate |
