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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| IPG20N06S2L65AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/infineon-ipg20n06s2l65aatma1-datasheets-0295.pdf | 8-PowerVDFN | Contains Lead | 10 Weeks | 8 | Halogen Free | 43W | 43W | 2 | PG-TDSON-8-10 | 410pF | 2 ns | 3ns | 7 ns | 10 ns | 20A | 20V | 55V | 55V | 43W | 53mOhm | 2 N-Channel (Dual) | 410pF @ 25V | 65mOhm @ 15A, 10V | 2V @ 14μA | 20A | 12nC @ 10V | Logic Level Gate | 65 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| QH8KA4TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/rohm-qh8ka4tcr-datasheets-0297.pdf | 8-SMD, Flat Lead | 8 | 20 Weeks | EAR99 | not_compliant | YES | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 9A | 40A | 0.017Ohm | 6.2 mJ | 2 N-Channel (Dual) | 1400pF @ 10V | 17m Ω @ 7A, 4.5V | 1.5V @ 1mA | 9A | 12nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L26AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n06s4l26aatma1-datasheets-8344.pdf | 8-PowerVDFN | Contains Lead | 6 | 12 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | 33W | FLAT | NOT SPECIFIED | Dual | NOT SPECIFIED | 33W | 2 | R-PDSO-F6 | 3ns | 10 ns | 15 ns | 20A | 20V | 60V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 35 mJ | 2 N-Channel (Dual) | 1430pF @ 25V | 26m Ω @ 17A, 10V | 2.2V @ 10μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| DMN6066SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn6066ssd13-datasheets-8307.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 66mOhm | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.8W | GULL WING | 260 | DMN6066SSD | 8 | Dual | 40 | 2.14W | 2 | FET General Purpose Power | 2.7 ns | 2.4ns | 5.4 ns | 14.7 ns | 3.3A | 20V | SILICON | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 4.4A | 2 N-Channel (Dual) | 502pF @ 30V | 66m Ω @ 4.5A, 10V | 3V @ 250μA | 10.3nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| HP8K22TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 6 | 20 Weeks | EAR99 | not_compliant | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 25W | 12A | 48A | 0.0133Ohm | 11.4 mJ | 2 N-Channel (Half Bridge) | 1080pF @ 15V | 4.6m Ω @ 20A, 10V | 2.5V @ 1mA | 27A 57A | 16.8nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6010LPD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth6010lpd13-datasheets-8679.pdf | 8-PowerTDFN | 23 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 2.8W | NOT SPECIFIED | NOT SPECIFIED | 47.6A | 60V | 2 N-Channel (Dual) | 2615pF @ 30V | 11m Ω @ 20A, 10V | 3V @ 250μA | 13.1A Ta 47.6A Tc | 40.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMHC10A07N8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zxmhc10a07n8tc-datasheets-8688.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 870mW | DUAL | GULL WING | 260 | ZXMHC10A07 | 8 | 40 | 1.36W | 4 | Other Transistors | 1.6 ns | 2.1ns | 3.3 ns | 5.9 ns | 1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 1A | 0.7Ohm | -100V | 2 N and 2 P-Channel (H-Bridge) | 138pF @ 60V | 700m Ω @ 1.5A, 10V | 4V @ 250μA | 800mA 680mA | 2.9nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| CSD85312Q3E | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd85312q3e-datasheets-0274.pdf | 8-PowerVDFN | 3.3mm | 3.3mm | Contains Lead | 4 | 8 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 900μm | EAR99 | AVALANCHE RATED | Gold | e4 | 2.5W | NO LEAD | 260 | CSD85312 | NOT SPECIFIED | 2.5W | 2 | FET General Purpose Power | 11 ns | 27ns | 6 ns | 24 ns | 39A | 10V | SILICON | COMPLEX | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 76A | 40 pF | 20V | 2 N-Channel (Dual) Common Source | 2390pF @ 10V | 12.4m Ω @ 10A, 8V | 1.4V @ 250μA | 15.2nC @ 4.5V | Logic Level Gate, 5V Drive | ||||||||||||||||||||||||||||||||||||||||
| TSM6968DCA RVG | Taiwan Semiconductor Corporation | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2007 | /files/taiwansemiconductorcorporation-tsm6968dcarvg-datasheets-8448.pdf | 8-TSSOP (0.173, 4.40mm Width) | 20 Weeks | 20V | 1.04W | 2 N-Channel (Dual) | 950pF @ 10V | 22m Ω @ 6A, 4.5V | 1V @ 250μA | 6.5A Tc | 15nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN4027SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmn4027ssd13-datasheets-8182.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 1.8W | GULL WING | 260 | DMN4027SSD | 8 | Dual | 40 | 2.1W | 2 | FET General Purpose Powers | 3.1 ns | 3.1ns | 7.5 ns | 15.4 ns | 5.4A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 7.1A | 40V | 2 N-Channel (Dual) | 604pF @ 20V | 27m Ω @ 7A, 10V | 3V @ 250μA | 12.9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| BSO220N03MDGXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bso220n03mdgxuma1-datasheets-8187.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 18 Weeks | 8 | yes | EAR99 | Tin | e3 | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.4W | 2 | Not Qualified | 2.8ns | 6A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 800pF @ 15V | 22m Ω @ 7.7A, 10V | 2.1V @ 250μA | 10nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3056LSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmp3056lsdq13-datasheets-8209.pdf | 8-SOIC (0.154, 3.90mm Width) | 23 Weeks | No SVHC | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.5W | 2 P-Channel (Dual) | 722pF @ 25V | 45m Ω @ 6A, 10V | 2.1V @ 250μA | 6.9A Ta | 13.7nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD85301Q2T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 12 Weeks | 9.695537mg | No SVHC | 6 | ACTIVE (Last Updated: 2 days ago) | yes | 750μm | AVALANCHE RATED | Tin | e3 | 2.3W | NO LEAD | CSD85301 | 2 | Dual | 2 | 6 ns | 26ns | 15 ns | 14 ns | 5A | 10V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 900mV | 5A | 0.039Ohm | 3.8 mJ | 20V | 2 N-Channel (Dual) | 469pF @ 10V | 27m Ω @ 5A, 4.5V | 1.2V @ 250μA | 5.4nC @ 4.5V | Logic Level Gate, 5V Drive | ||||||||||||||||||||||||||||||||||||||||
| BUK9K134-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k134100ex-datasheets-8245.pdf | SOT-1205, 8-LFPAK56 | Lead Free | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 32W | GULL WING | 8 | 2 | R-PDSO-G6 | 8.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 32W | 34A | 0.159Ohm | 12.6 mJ | 2 N-Channel (Dual) | 755pF @ 25V | 159m Ω @ 5A, 5V | 2.1V @ 1mA | 7.4nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD83325LT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd83325lt-datasheets-0241.pdf | 6-XFBGA | 1.11mm | 2.16mm | Lead Free | 6 | 6 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 5 days ago) | yes | 200μm | 2.3W | BOTTOM | NO LEAD | 260 | CSD83325 | Dual | NOT SPECIFIED | 2 | 205 ns | 353ns | 589 ns | 711 ns | 8A | 10V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 950mV | 9.9mOhm | 144 pF | 2 N-Channel (Dual) Common Drain | 1.25V @ 250μA | 10.9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC150N03LDGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc150n03ldgatma1-datasheets-8201.pdf | 8-PowerVDFN | Contains Lead | 6 | 26 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | FLAT | BSC150N03 | 8 | 26W | 2 | Not Qualified | R-PDSO-F6 | 2.2ns | 8A | 20V | 30V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 10 mJ | 2 N-Channel (Dual) | 1100pF @ 15V | 15m Ω @ 20A, 10V | 2.2V @ 250μA | 13.2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD75208W1015T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 6 | 6 Weeks | 1.700971mg | No SVHC | 6 | ACTIVE (Last Updated: 1 week ago) | yes | 2mm | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 750mW | BOTTOM | BALL | 260 | CSD75207 | 2 | Dual | NOT SPECIFIED | 2 | 9 ns | 5ns | 11 ns | 29 ns | 1.6A | -6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -800mV | 0.15Ohm | 10 pF | -20V | 2 P-Channel (Dual) Common Source | 410pF @ 10V | 68m Ω @ 1A, 4.5V | 1.1V @ 250μA | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SQJ952EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj952ept1ge3-datasheets-7856.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 25W Tc | 2 N-Channel (Dual) | 1800pF @ 30V | 20m Ω @ 10.3A, 10V | 2.5V @ 250μA | 23A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMD6P02R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntmd6p02r2g-datasheets-8272.pdf | -20V | -6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 29 Weeks | No SVHC | 33mOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | Tin | No | e3 | YES | 750mW | GULL WING | 260 | NTMD6P02 | 8 | Dual | 40 | 2W | 2 | Other Transistors | 6A | 20ns | 50 ns | 85 ns | 7.8A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1 | -880mV | 450 pF | -20V | 2 P-Channel (Dual) | 1700pF @ 16V | 33m Ω @ 6.2A, 4.5V | 1.2V @ 250μA | 4.8A | 35nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| IRF8915TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf8915trpbf-datasheets-8087.pdf | 20V | 8.9A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 12 Weeks | No SVHC | 18.3MOhm | 8 | EAR99 | No | 2W | IRF8915PBF | Dual | 2W | 2 | FET General Purpose Power | 6 ns | 12ns | 3.6 ns | 7.1 ns | 8.9A | 20V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 20V | 2 N-Channel (Dual) | 540pF @ 10V | 18.3m Ω @ 8.9A, 10V | 2.5V @ 250μA | 7.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C470NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c470nlwft1g-datasheets-8413.pdf | 8-PowerTDFN | 6 | 48 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | FLAT | 260 | 30 | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3W Ta 24W Tc | 110A | 0.0178Ohm | 49 mJ | 2 N-Channel (Dual) | 590pF @ 25V | 11.5m Ω @ 5A, 10V | 2.2V @ 20μA | 11A Ta 36A Tc | 4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3669S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms3669s-datasheets-8351.pdf | 8-PowerTDFN | 5mm | 1.1mm | 5.9mm | 6 | 13 Weeks | 171mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2.5W | FLAT | 2 | FET General Purpose Power | R-PDSO-F6 | 3ns | 3 ns | 24 ns | 60A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1W | 13A | 0.01Ohm | 55 pF | 30V | 2 N-Channel (Dual) Asymmetrical | 1605pF @ 15V | 10m Ω @ 13A, 10V | 2.7V @ 250μA | 13A 18A | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SH8KA4TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | not_compliant | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3W | 9A | 18A | 21.4Ohm | 4.6 mJ | 2 N-Channel (Dual) | 640pF @ 15V | 21.4m Ω @ 9A, 10V | 2.5V @ 1mA | 9A | 15.5nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2011UFX-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2011ufx7-datasheets-8046.pdf | 4-VFDFN Exposed Pad | 23 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.1W | NOT SPECIFIED | NOT SPECIFIED | 12.2A | 20V | 2 N-Channel (Dual) | 2248pF @ 10V | 9.5m Ω @ 10A, 4.5V | 1V @ 250μA | 12.2A Ta | 56nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8MA4TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-sh8ma4tb1-datasheets-7846.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 18A | 0.0325Ohm | 5.7 mJ | N and P-Channel | 640pF 890pF @ 15V | 21.4m Ω @ 9A, 10V, 29.6m Ω @ 8.5A, 10V | 2.5V @ 1mA | 9A Ta 8.5A Ta | 15.5nC, 19.6nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB42EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb42ept1ge3-datasheets-7973.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 48W | 30A | 120A | 0.0095Ohm | 31 mJ | 2 N-Channel (Dual) | 1500pF @ 25V | 9.5m Ω @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6992 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 8-PowerWDFN | 18 Weeks | 8 | yes | 3.1W | NOT SPECIFIED | NOT SPECIFIED | 31A | 30V | 2 N-Channel (Dual) Asymmetrical | 820pF @ 15V | 5.2m Ω @ 20A, 10V | 2.2V @ 250μA | 19A 31A | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA3027PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdma3027pz-datasheets-7975.pdf | 6-VDFN Exposed Pad | 2mm | 725μm | 2mm | Lead Free | 6 | 16 Weeks | 40mg | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | NO LEAD | NOT SPECIFIED | Dual | NOT SPECIFIED | 1.4W | 2 | Other Transistors | 5.2 ns | 3ns | 11 ns | 17 ns | 3.3A | 25V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.9V | 700mW | 0.087Ohm | 80 pF | -30V | 2 P-Channel (Dual) | 435pF @ 15V | 87m Ω @ 3.3A, 10V | 3V @ 250μA | 10nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| BUK7K45-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk7k45100ex-datasheets-7956.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 53W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | R-PDSO-G6 | 21.4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 53W | 0.0376Ohm | 46 mJ | 2 N-Channel (Dual) | 1533pF @ 25V | 37.6m Ω @ 5A, 10V | 4V @ 1mA | 25.9nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M13GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 10 Weeks | 30V | 2W | N and P-Channel | 1200pF @ 10V | 29m Ω @ 7A, 10V | 2.5V @ 1mA | 6A 7A | 18nC @ 5V |
