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ContactFDMS3600S
FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS3600S
- Package: -
- Datasheet:
- Stock: 4482
- Description: FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Weight | 171mg |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 7 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1W |
| Terminal Position | QUAD |
| JESD-30 Code | R-PQFP-N7 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN SOURCE |
| Transistor Application | SWITCHING |
| Rise Time | 5.3ns |
| Drain to Source Voltage (Vdss) | 25V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 3.9 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 30A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 15A |
| Drain to Source Breakdown Voltage | 25V |
| Input Capacitance | 1.68nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 1.6mOhm |
| Rds On Max | 5.6 mΩ |
| Nominal Vgs | 1.8 V |
| Feedback Cap-Max (Crss) | 90 pF |
| Height | 1.05mm |
| Length | 5mm |
| Width | 6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
Conforms to RoHS
FDMS3600S Applications
Notebook PC
