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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 9.695537mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 2.3W |
| Terminal Form | NO LEAD |
| Base Part Number | CSD85301 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 27m Ω @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 469pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| Rise Time | 26ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 900mV |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain-source On Resistance-Max | 0.039Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Avalanche Energy Rating (Eas) | 3.8 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate, 5V Drive |
| Length | 2mm |
| Width | 2mm |
| Thickness | 750μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The CSD85301Q2T is a 20 V, 23 mQ N-Channel device with two different MOSFETs that is housed in a SON 2 x 2 mm plastic container. The two FETs were designed with synchronous buck applications and other power supply usage in mind, as well as a half bridge configuration. Additionally, this component can be used in adapter, USB input protection, and battery charging applications. The twin FETs' low drain to source on-resistance lowers losses and offers a reduced component count for applications with restricted space.
?Low On Resistance
?Dual MOSFETs with separate operation
?SON 2*2 mm Space-Saving Plastic Package
?Works best when used with a 5 V gate driver.
?Avalanches Rated
?Pb and Halogen Free
? RoHS-compliant
? The f-Load Synchronous Buck Converier for Network Applications! Systems for computers, telephones, and networks
? USB input security for notebooks and tablets
? Power Supply Security
Please send RFQ , we will respond immediately.