FDMS7602S

FDMS7602S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDMS7602S
  • Package: 8-PowerWDFN
  • Datasheet: pdf
  • Stock: 8740
  • Description: FDMS7602S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 211mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 7.5MOhm
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
JESD-30 Code R-PDSO-N6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A 17A
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 3.8ns
Fall Time (Typ) 3.2 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.8 V
Height 700μm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDMS7602S Description


Two specialized N-Channel MOSFETs are contained in a twin MLP package in this device. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. In order to offer the best power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been constructed.



FDMS7602S Features


  • Max DS(on) = 7.5 mQ at 10 V, Vgg, and 12 A

  • Max DS(on) = 12 mQ at 4.5 V VGS, 10 A lD Q2: N-Channel

  • Max DS(on) = 5.0 mQ at 10 V VGS and 17 A lD

  • Maximum rDs(on) is 6.8 mQ at 4.5 V, lD, and VGS.



FDMS7602S Applications


  • Computing

  • Communications

  • Point of Load for General Purpose


In Stock

Please send RFQ , we will respond immediately.