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NTJD4001NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTJD4001NT1G
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 9434
- Description: NTJD4001NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 22 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 1Ohm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 272mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 250mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 272mW |
| Turn On Delay Time | 17 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 33pF @ 5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 5V |
| Rise Time | 23ns |
| Fall Time (Typ) | 23 ns |
| Turn-Off Delay Time | 94 ns |
| Continuous Drain Current (ID) | 250mA |
| Threshold Voltage | 1.2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Nominal Vgs | 1.2 V |
| Height | 1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTJD4001NT1G Description
NTJD4001NT1G MOSFET can be described as a very high voltage MOSFET that is based on planar stripe technology and DMOS technology. MOSFET NTJD4001NT1G is designed to decrease the resistance to on-state. NTJD4001NT1G ON Semiconductor is ideal for Low Side Load Switch, Li-Ion Battery Supplied Devices, Buck Converters, and Level Shifts.
NTJD4001NT1G Features
Low Gate charge for fast switching
Small footprint - 30% smaller than TSOP-6
ESD Protected Gate
RoHS Compliant
NTJD4001NT1G Applications
Low Side Load Switch
Li-Ion Battery Supplied Devices
Buck Converters
Level Shifts
