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MOSFET 2N-CH 30V 16A/46A 8-HSO
- Manufacturer: Panasonic Electronic Components
- NO: 590-SC8673040L
- Package: 8-PowerSMD, Flat Leads
- Datasheet:
- Stock: 9632
- Description: MOSFET 2N-CH 30V 16A/46A 8-HSO(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSMD, Flat Leads |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 40W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | DEPLETION MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| Power - Max | 1.7W 2.5W |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 5.85mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1092pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 16A 46A |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 4.5V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 75 ns |
| Continuous Drain Current (ID) | 46A |
| Gate to Source Voltage (Vgs) | 3V |
| Drain Current-Max (Abs) (ID) | 10A |
| Drain-source On Resistance-Max | 0.014Ohm |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 950μm |
| Length | 4.9mm |
| Width | 5.9mm |
| RoHS Status | RoHS Compliant |
