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DMG6601LVT-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-DMG6601LVT-7
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 5726
- Description: DMG6601LVT-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 26 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Max Power Dissipation | 850mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | DMG6601 |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 850mW |
| Turn On Delay Time | 1.7 ns |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 422pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A 2.5A |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V |
| Rise Time | 4.6ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 2.2 ns |
| Turn-Off Delay Time | 18.3 ns |
| Continuous Drain Current (ID) | 2.5A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 3.8A |
| Drain-source On Resistance-Max | 0.055Ohm |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1mm |
| Length | 2.9mm |
| Width | 1.6mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
DMG6601LVT-7 Description
The DMG6601LVT-7 is a complementary pair enhancement mode MOSFET. Its low on-state resistance (RDS(ON)) and exceptional switching performance make this MOSFET the perfect choice for high efficiency power management applications.
DMG6601LVT-7 Features
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability
Complementary MOSFET
Low On-Resistance
Low Input Capacitance
DMG6601LVT-7 Applications
Backlighting
Power Management Functions
DC-DC Converters
