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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| FDMS7600AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7600as-datasheets-2167.pdf | 8-PowerWDFN | 5mm | 700μm | 6mm | Lead Free | 6 | 16 Weeks | 211mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1W | FLAT | 1W | 2 | FET General Purpose Power | R-PDSO-F6 | 7.6ns | 5.2 ns | 45 ns | 40A | 20V | SILICON | SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 0.0075Ohm | 30V | 2 N-Channel (Dual) | 1750pF @ 15V | 1 V | 7.5m Ω @ 12A, 10V | 3V @ 250μA | 12A 22A | 28nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M4FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/rohm-sp8m4fratb-datasheets-8894.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 9A | 36A | 0.025Ohm | N and P-Channel | 1190pF @ 10V 2600pF @ 10V | 18m Ω @ 9A, 10V, 28m Ω @ 7A, 10V | 2.5V @ 1mA | 9A Ta 7A Ta | 15nC @ 5V, 25nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD82100L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmd82100l-datasheets-2227.pdf | 12-PowerWDFN | 12 | 12 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1W | NO LEAD | 260 | 2 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 7.9 ns | 2.8ns | 2.9 ns | 21 ns | 7A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 7A | 0.0195Ohm | 15 pF | 100V | 2 N-Channel (Dual) | 1585pF @ 50V | 19.5m Ω @ 7A, 10V | 3V @ 250μA | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4904DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4904dyt1e3-datasheets-2203.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 16mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 2W | GULL WING | 260 | SI4904 | 8 | 2 | Dual | 40 | 2W | 2 | 88 ns | 117ns | 19 ns | 62 ns | 8A | 16V | SILICON | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3.25W | 8A | 2 N-Channel (Dual) | 2390pF @ 20V | 16m Ω @ 5A, 10V | 2V @ 250μA | 85nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| HP8M51TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-hp8m51tb1-datasheets-2097.pdf | 8-PowerTDFN | 6 | 16 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 3W Ta | 18A | 0.18Ohm | 2.9 mJ | N and P-Channel | 600pF @ 50V | 170m Ω @ 4.5A, 10V, 290m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A Ta | 15nC, 26.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4917EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq4917eyt1ge3-datasheets-2053.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 12 Weeks | 8 | unknown | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 5W | 2 | 8A | 20V | SILICON | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 5W Tc | 8A | 2 P-Channel (Dual) | 1910pF @ 30V | 48m Ω @ 4.3A, 10V | 2.5V @ 250μA | 8A Tc | 65nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7212DN-T1-E3 | Vishay Siliconix | $1.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7212dnt1e3-datasheets-2260.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7212 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Power | S-XDSO-C6 | 10 ns | 12ns | 12 ns | 30 ns | 6.8A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4.9A | 0.036Ohm | 30V | 2 N-Channel (Dual) | 36m Ω @ 6.8A, 10V | 1.6V @ 250μA | 4.9A | 11nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| AONX38168 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XSPairFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerVDFN | 18 Weeks | 25V | 3.1W Ta 20W Tc 3.2W Ta 69W Tc | 2 N-Channel (Dual) Asymmetrical | 1.15nF 4.52nF @ 12.5V | 3.3m Ω @ 20A, 10V, 0.8m Ω @ 20A, 10V | 1.9V @ 250μA, 1.8V @ 250μA | 25A Ta 62A Tc 50A Ta 85A Tc | 24nC, 85nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8KA7GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-sh8ka7gzetb-datasheets-1890.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | EAR99 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 30A | 0.0093Ohm | 65.1 mJ | 2 N-Channel (Dual) | 3320pF @ 15V | 9.3m Ω @ 15A, 10V | 2.5V @ 1mA | 15A Ta | 81nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7220DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7220dnt1ge3-datasheets-1978.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7220 | 8 | Dual | 40 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 10 ns | 10ns | 10 ns | 20 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 0.06Ohm | 6.1 mJ | 60V | 2 N-Channel (Dual) | 60m Ω @ 4.8A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K39GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/rohmsemiconductor-sh8k39gzetb-datasheets-1981.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 1.4W Ta | 2 N-Channel (Dual) | 1240pF @ 30V | 21m Ω @ 8A, 10V | 2.7V @ 200μA | 8A Ta | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HP8M31TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-hp8m31tb1-datasheets-2101.pdf | 8-PowerTDFN | 6 | 16 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3W Ta | 18A | 0.073Ohm | 5.4 mJ | N and P-Channel | 470pF 2300pF @ 30V | 65m Ω @ 8.5A, 10V, 70m Ω @ 8.5A, 10V | 3V @ 1mA | 8.5A Ta | 12.3nC, 38nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C674NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-ntmfd5c674nlt1g-datasheets-2108.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3W Ta 37W Tc | 2 N-Channel (Dual) | 640pF @ 25V | 14.4m Ω @ 10A, 10V | 2.2V @ 25μA | 11A Ta 42A Tc | 10nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPS1120DR | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-tps1120dr-datasheets-8878.pdf | -15V | -1.17A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1.58mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | Gold | No | e4 | 840mW | GULL WING | 260 | TPS1120 | 8 | 840mW | 2 | Other Transistors | 4.5 ns | 10ns | 10 ns | 13 ns | 1.17A | 2V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.4Ohm | 15V | 2 P-Channel (Dual) | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 5.45nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K4TB1 | ROHM Semiconductor | $7.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sh8k4tb1-datasheets-1898.pdf | 8-SOIC (0.154, 3.90mm Width) | 10 Weeks | 8 | 2W | *K4 | 8-SOP | 1.19nF | 9A | 30V | 2W | 2 N-Channel (Dual) | 1190pF @ 10V | 17mOhm @ 9A, 10V | 2.5V @ 1mA | 9A | 21nC @ 5V | Logic Level Gate | 17 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS1DNC45 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts1dnc45-datasheets-1949.pdf | 450V | 400mA | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 1.6W | GULL WING | 260 | STS1D | 8 | 30 | 2W | 2 | FET General Purpose Power | 6.7 ns | 4ns | 4 ns | 400mA | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.4A | 1.6A | 30 mJ | 450V | 2 N-Channel (Dual) | 160pF @ 25V | 4.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 10nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TD9944TG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-td9944tgg-datasheets-1446.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 5 Weeks | 84.99187mg | 8 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | 2 | 40 | 2 | FET General Purpose Power | Not Qualified | 10 ns | 10ns | 10 ns | 20 ns | 1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6Ohm | 240V | 2 N-Channel (Dual) | 125pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87313DMS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerWDFN | 3.3mm | 3.3mm | 6 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 750μm | EAR99 | AVALANCHE RATED | YES | NO LEAD | CSD87313 | 2 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 200 pF | 67 mJ | 2 N-Channel (Dual) Common Drain | 4290pF @ 15V | 1.25V @ 250μA | 28nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4816BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4816bdyt1e3-datasheets-1915.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 18.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 1.25W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | Single | 40 | 2 | 150°C | 13 ns | 9ns | 9 ns | 31 ns | 5.8A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 1W 1.25W | 2 N-Channel (Half Bridge) | 3 V | 18.5m Ω @ 6.8A, 10V | 3V @ 250μA | 5.8A 8.2A | 10nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SP8M5FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/rohm-sp8m5fratb-datasheets-8861.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 6A | 24A | 0.047Ohm | N and P-Channel | 520pF @ 10V 2600pF @ 10V | 30m Ω @ 6A, 10V, 28m Ω @ 7A, 10V | 2.5V @ 1mA | 6A Ta 7A Ta | 7.2nC @ 5V, 25nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMD6N04R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/onsemiconductor-nvmd6n04r2g-datasheets-1833.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 38 Weeks | 8 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | Tin | e3 | YES | 1.29W | NOT SPECIFIED | 8 | Dual | NOT SPECIFIED | FET General Purpose Power | 4.6A | 20V | 40V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 900pF @ 32V | 34m Ω @ 5.8A, 10V | 3V @ 250μA | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7913DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7913dnt1ge3-datasheets-1906.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 37mOhm | 8 | yes | EAR99 | Tin | No | e3 | 1.3W | C BEND | 260 | SI7913 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | S-XDSO-C6 | 20 ns | 70ns | 70 ns | 72 ns | -7.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 5A | -20V | 2 P-Channel (Dual) | 37m Ω @ 7.4A, 4.5V | 1V @ 250μA | 5A | 24nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| STS10DN3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts10dn3lh5-datasheets-1088.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 21MOhm | 8 | NRND (Last Updated: 8 months ago) | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5W | GULL WING | 260 | STS10 | 8 | 30 | 2.5W | 2 | FET General Purpose Power | 4 ns | 22ns | 2.8 ns | 13 ns | 10A | 22V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 40A | 50 mJ | 30V | 2 N-Channel (Dual) | 475pF @ 25V | 21m Ω @ 5A, 10V | 1V @ 250μA | 4.6nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7216DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7216dnt1ge3-datasheets-1729.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.5W | C BEND | 260 | SI7216 | 8 | 2 | Dual | 30 | 2.5W | 2 | FET General Purpose Power | S-XDSO-C6 | 9 ns | 57ns | 5 ns | 19 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 3V | 20.8W | 6.5A | 5 mJ | 40V | 2 N-Channel (Dual) | 670pF @ 20V | 32m Ω @ 5A, 10V | 3V @ 250μA | 19nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| CSD87334Q3D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 1.05mm | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 8 | 8 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 900μm | EAR99 | Gold | not_compliant | 1 | e3 | Matte Tin (Sn) | 6W | NO LEAD | 260 | 0.65mm | CSD87334 | SWITCHING CONTROLLER | NOT SPECIFIED | 20mA | 20A | 30V | 6W | 12V | 24V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 2 N-Channel (Dual) Asymmetrical | 1260pF @ 15V | 6m Ω @ 12A, 8V | 1.2V @ 250μA | 8.3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPC8011S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdpc8011s-datasheets-1884.pdf | 3.4mm | 800μm | 3.4mm | Lead Free | 8 | 12 Weeks | 192mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 900mW | Dual | 2W | 2 | FET General Purpose Power | 1.24nF | 5ns | 4 ns | 38 ns | 27A | 12V | SWITCHING | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 1.4V | 13A | 1.2mOhm | 25V | 1.4 V | 6 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4284EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sq4284eyt1ge3-datasheets-1902.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 506.605978mg | 8 | 3.9W | 2 | Dual | 3.9W | 2 | 8-SO | 2.2nF | 10 ns | 40ns | 11 ns | 32 ns | 8A | 20V | 40V | 3.9W | 13.5mOhm | 2 N-Channel (Dual) | 2200pF @ 25V | 13.5mOhm @ 7A, 10V | 2.5V @ 250μA | 45nC @ 10V | Logic Level Gate | 13.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7913DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7913dnt1ge3-datasheets-1906.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 37MOhm | 8 | yes | EAR99 | Tin | e3 | 1.3W | C BEND | 260 | SI7913 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | Not Qualified | S-XDSO-C6 | 20 ns | 70ns | 70 ns | 72 ns | -7.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 5A | -20V | 2 P-Channel (Dual) | 37m Ω @ 7.4A, 4.5V | 1V @ 250μA | 5A | 24nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| FDMD8530 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdmd8530-datasheets-1929.pdf | 8-PowerWDFN | 8 Weeks | 94.85095mg | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 2.2W | 260 | Dual | NOT SPECIFIED | 35A | 30V | 1.5V | 2 N-Channel (Dual) | 10395pF @ 15V | 1.25m Ω @ 35A, 10V | 3V @ 250μA | 149nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6890A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6890a-datasheets-1290.pdf | 20V | 7.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 180mOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | 2W | GULL WING | Dual | 2W | 2 | FET General Purpose Power | 13 ns | 26ns | 23 ns | 65 ns | 7.5A | 8V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 800mV | 900mW | 20V | 2 N-Channel (Dual) | 2130pF @ 10V | 800 mV | 18m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 32nC @ 4.5V | Logic Level Gate |
