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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI9926CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9926cdyt1e3-datasheets-1229.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 14 Weeks | 186.993455mg | No SVHC | 18mOhm | 8 | No | 3.1W | SI9926 | 2 | Dual | 3.1W | 2 | 8-SO | 1.2nF | 10 ns | 12ns | 10 ns | 25 ns | 8A | 12V | 20V | 1.5V | 3.1W | 18mOhm | 20V | 2 N-Channel (Dual) | 1200pF @ 10V | 18mOhm @ 8.3A, 4.5V | 1.5V @ 250μA | 8A | 33nC @ 10V | Logic Level Gate | 18 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| FDPC5018SG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdpc5018sg-datasheets-1705.pdf | 8-PowerWDFN | 8 | 23 Weeks | 207.7333mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1.1W | NO LEAD | 260 | NOT SPECIFIED | 2 | 32A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1W 1.1W | 17A | 0.005Ohm | 60 pF | 2 N-Channel (Dual) Asymmetrical | 1715pF @ 15V | 5m Ω @ 17A, 10V | 3V @ 250μA | 17A 32A | 24nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPC5030SG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdpc5030sg-datasheets-1739.pdf | 8-PowerWDFN | 23 Weeks | 207.7333mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1.1W | 260 | NOT SPECIFIED | 25A | 30V | 1W 1.1W | 2 N-Channel (Dual) Asymmetrical | 1715pF @ 15V | 5m Ω @ 17A, 10V | 3V @ 250μA | 17A 25A | 24nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD86336Q3D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | 1.05mm | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | 8 | 8 Weeks | yes | EAR99 | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 0.65mm | CSD86336 | SWITCHING REGULATOR | NOT SPECIFIED | S-PDSO-N8 | 25V | 6W | 12V | 22V | BUCK | 1500kHz | 2 N-Channel (Half Bridge) | 494pF @ 12.5V 970pF @ 12.5V | 9.1m Ω @ 20A, 5V, 3.4m Ω @ 20A, 5V | 1.9V @ 250μA, 1.6V @ 250μA | 20A Ta | 3.8nC @ 45V, 7.4nC @ 45V | Logic Level Gate, 5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7216DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7216dnt1ge3-datasheets-1729.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 39mOhm | 8 | yes | EAR99 | Tin | No | e3 | 2.5W | C BEND | 260 | SI7216 | 8 | 2 | Dual | 30 | 2.5W | 2 | FET General Purpose Power | S-XDSO-C6 | 9 ns | 57ns | 5 ns | 19 ns | 5A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3V | 20.8W | 5 mJ | 2 N-Channel (Dual) | 670pF @ 20V | 32m Ω @ 5A, 10V | 3V @ 250μA | 6A | 19nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| ZXMC4559DN8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmc4559dn8tc-datasheets-1836.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2.1W | 2 | Other Transistors | 3.5 ns | 4.1ns | 10 ns | 35 ns | 2.6A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | -1V | 3.6A | 0.055Ohm | -60V | N and P-Channel | 1063pF @ 30V | 55m Ω @ 4.5A, 10V | 1V @ 250μA (Min) | 3.6A 2.6A | 20.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI4542DY | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-si4542dy-datasheets-1596.pdf | 30V | 7A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 8 Weeks | 230.4mg | No SVHC | 8 | ACTIVE (Last Updated: 16 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | DUAL | GULL WING | SI4542D | Single | 2W | 2 | Other Transistors | 22ns | 18 ns | 47 ns | 6A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.5V | 6A | 30V | N and P-Channel | 830pF @ 15V | 1.5 V | 28m Ω @ 6A, 10V | 3V @ 250μA | 13nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||
| STL66DN3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ V | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stl66dn3llh5-datasheets-1762.pdf | 8-PowerVDFN | Lead Free | 14 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 72W | STL66 | 72W | 2 | FET General Purpose Powers | 8.8 ns | 18ns | 4 ns | 26 ns | 78.5A | 22V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 1500pF @ 25V | 6.5m Ω @ 10A, 10V | 3V @ 250μA | 12nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K22FRATB | ROHM Semiconductor | $1.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/rohm-sp8k22fratb-datasheets-8767.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 45V | 45V | METAL-OXIDE SEMICONDUCTOR | 2W | 4.5A | 18A | 0.064Ohm | 2 N-Channel (Dual) | 550pF @ 10V | 46m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A Ta | 9.6nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8984-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds8984f085-datasheets-1655.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 4 Weeks | 230.4mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | No | 1.6W | GULL WING | Single | 1.6W | 2 | FET General Purpose Power | 5 ns | 9ns | 21 ns | 42 ns | 7A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 30A | 30V | 2 N-Channel (Dual) | 635pF @ 15V | 23m Ω @ 7A, 10V | 2.5V @ 250μA | 13nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL7DN6LF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl7dn6lf3-datasheets-1397.pdf | 8-PowerVDFN | Lead Free | 6 | 12 Weeks | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 52W | FLAT | 260 | STL7D | Dual | 52W | 2 | FET General Purpose Power | R-PDSO-F6 | 20A | 20V | SILICON | DRAIN | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 26A | 0.06Ohm | 190 mJ | 60V | 2 N-Channel (Dual) | 432pF @ 25V | 43m Ω @ 3A, 10V | 3V @ 250μA | 8.8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K32-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k32100ex-datasheets-1387.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | AEC-Q101; IEC-60134 | 64W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | R-PDSO-G6 | 29A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 64W | 116A | 0.0275Ohm | 67 mJ | 2 N-Channel (Dual) | 2137pF @ 25V | 27.5m Ω @ 5A, 10V | 4V @ 1mA | 34nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3615S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms3615s-datasheets-1676.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.1mm | 6 | 18 Weeks | 90mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | 1W | 2 | FET General Purpose Power | R-PDSO-N6 | 3ns | 2.2 ns | 24 ns | 18A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 16A | 115 pF | 25V | 2 N-Channel (Dual) Asymmetrical | 1765pF @ 13V | 5.8m Ω @ 16A, 10V | 2.5V @ 250μA | 16A 18A | 27nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K32GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8k32gzetb-datasheets-1391.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 1.4W Ta | 2 N-Channel (Dual) | 500pF @ 10V | 65m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A Ta | 10nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7272DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7272dpt1ge3-datasheets-1489.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | unknown | e3 | 22W | C BEND | 260 | SI7272 | 8 | 30 | 3.6W | 2 | FET General Purpose Powers | Not Qualified | R-XDSO-C6 | 20 ns | 15ns | 10 ns | 22 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 60A | 0.0093Ohm | 2 N-Channel (Dual) | 1100pF @ 15V | 9.3m Ω @ 15A, 10V | 2.5V @ 250μA | 25A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| CSD87333Q3DT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 1.05mm | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 8 | 6 Weeks | 75.891673mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 900μm | EAR99 | Gold | not_compliant | 1 | e3 | Matte Tin (Sn) | 6W | NO LEAD | 260 | 0.65mm | CSD87333 | 2 | SWITCHING CONTROLLER | Single | NOT SPECIFIED | 2.1 ns | 3.9ns | 2.2 ns | 9.4 ns | 15A | 950mV | 30V | 12V | BUCK-BOOST | 1500kHz | 2 N-Channel (Dual) Asymmetrical | 662pF @ 15V | 14.3m Ω @ 4A, 8V | 1.2V @ 250μA | 4.6nC @ 4.5V | Logic Level Gate, 5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4936BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4936bdyt1ge3-datasheets-1205.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | 2.8W | GULL WING | 260 | SI4936 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | 5 ns | 25ns | 10 ns | 12 ns | 6.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 3V | 0.035Ohm | 30V | 2 N-Channel (Dual) | 530pF @ 15V | 35m Ω @ 5.9A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| FC8V22040L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/panasonicelectroniccomponents-fc8v22040l-datasheets-1285.pdf | 8-SMD, Flat Lead | 2.9mm | 830μm | 2.4mm | 8 | 10 Weeks | 8 | EAR99 | unknown | 1W | NOT SPECIFIED | FC8V2204 | Dual | NOT SPECIFIED | 1W | 2 | FET General Purpose Power | 600 ps | 4.4 μs | 8A | 12V | SILICON | SWITCHING | 24V | METAL-OXIDE SEMICONDUCTOR | 8A | 0.02Ohm | 24V | 2 N-Channel (Dual) | 15m Ω @ 4A, 4.5V | 1.5V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ710DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz710dtt1ge3-datasheets-1461.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | Lead Free | 6 | 14 Weeks | Unknown | 6.8mOhm | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 48W | NO LEAD | 260 | SIZ710 | 6 | 2 | Dual | 40 | 4.6W | 2 | FET General Purpose Power | Not Qualified | 15ns | 12 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.2V | 27W 48W | 35A | 70A | 20V | 2 N-Channel (Half Bridge) | 820pF @ 10V | 2.2 V | 6.8m Ω @ 19A, 10V | 2.2V @ 250μA | 16A 35A | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI7236DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7236dpt1ge3-datasheets-1565.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 15 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 46W | C BEND | 260 | SI7236 | 8 | Dual | 30 | 3.5W | 2 | FET General Purpose Power | R-XDSO-C6 | 10 ns | 15ns | 10 ns | 60 ns | 20.7A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 60A | 20V | 2 N-Channel (Dual) | 4000pF @ 10V | 5.2m Ω @ 20.7A, 4.5V | 1.5V @ 250μA | 60A | 105nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| SP8M51FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 2W | 3A | 12A | 0.19Ohm | N and P-Channel | 610pF @ 10V 1550pF @ 25V | 170m Ω @ 3A, 10V, 290m Ω @ 2.5A, 10V | 2.5V @ 1mA | 3A Ta 2.5A Ta | 8.5nC @ 5V, 12.5nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ902DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz902dtt1ge3-datasheets-1531.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 14 Weeks | 8 | EAR99 | Tin | No | 66W | SIZ902 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 10ns | 10 ns | 35 ns | 16A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 29W 66W | 50A | 16 mJ | 2 N-Channel (Half Bridge) | 790pF @ 15V | 12m Ω @ 13.8A, 10V | 2.2V @ 250μA | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4961EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq4961eyt1ge3-datasheets-1499.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 2 | 8-SO | 11 ns | 13ns | 8 ns | 36 ns | 4.4A | 20V | 60V | 3.3W | 2 P-Channel (Dual) | 1140pF @ 25V | 85mOhm @ 3.5A, 10V | 2.5V @ 250μA | 4.4A Tc | 40nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7923DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7923dnt1e3-datasheets-1593.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 47mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7923 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | S-XDSO-C6 | 10 ns | 12ns | 12 ns | 38 ns | -6.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -3V | 4.3A | -30V | 2 P-Channel (Dual) | 47m Ω @ 6.4A, 10V | 3V @ 250μA | 4.3A | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SP8M10FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 7A | 28A | 0.037Ohm | N and P-Channel | 600pF 850pF @ 10V | 25m Ω @ 7A, 10V, 56m Ω @ 4.5A, 10V | 2.5V @ 1mA | 7A Ta 4.5A Ta | 8.4nC, 8.5nC @ 5V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M24TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8m24gzetb-datasheets-0736.pdf | 8-SOIC (0.154, 3.90mm Width) | 52 Weeks | 8 | 2W | *M24 | 2W | 3.5A | 45V | N and P-Channel | 550pF @ 10V | 46m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A 3.5A | 9.6nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC7208S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc7208s-datasheets-1311.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | 4 | 23 Weeks | 196mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 800mW | Dual | 1.9W | 2 | FET General Purpose Power | S-PDSO-N4 | 7 ns | 2 ns | 23 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 12A | 0.009Ohm | 55 pF | 30V | 2 N-Channel (Dual) | 1130pF @ 15V | 9m Ω @ 12A, 10V | 3V @ 250μA | 12A 16A | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| STL8DN6LF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stl8dn6lf3-datasheets-1452.pdf | 8-PowerVDFN | Lead Free | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 65W | STL8 | 65W | 2 | FET General Purpose Powers | 9 ns | 7.7ns | 5 ns | 32.5 ns | 20A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 668pF @ 25V | 30m Ω @ 4A, 10V | 3V @ 250μA | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K13-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk7k1360ex-datasheets-1145.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 64W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | R-PDSO-G6 | 40A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 64W | 213A | 0.01Ohm | 2 N-Channel (Dual) | 2163pF @ 25V | 10m Ω @ 10A, 10V | 4V @ 1mA | 30.1nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7620S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdms7620s-datasheets-1122.pdf | 8-PowerWDFN | 5mm | 750μm | 6mm | Lead Free | 6 | 16 Weeks | 211mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.5W | 2.2W | 2 | FET General Purpose Power | R-PDSO-N6 | 6.6 ns | 1.8ns | 1.5 ns | 17.4 ns | 12.4A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.2V | 1W | 0.0101A | 31 pF | 30V | 2 N-Channel (Dual) | 608pF @ 15V | 20m Ω @ 10.1A, 10V | 3V @ 250μA | 10.1A 12.4A | 11nC @ 10V | Logic Level Gate |
