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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Max Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Power - Max | Output Current per Channel | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| TC6215TG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microchiptechnology-tc6215tgg-datasheets-0497.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.65mm | 3.8mm | 8 | 6 Weeks | 84.99187mg | 8 | EAR99 | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | TC621 | 2 | Dual | 40 | 2 | Not Qualified | 2.5 ns | 2.3ns | 11.3 ns | 17.2 ns | 36A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | 5Ohm | -150V | N and P-Channel | 120pF @ 25V | 4 Ω @ 2A, 10V | 2V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||
| SIZ904DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz904dtt1ge3-datasheets-0342.pdf | 6-PowerPair™ | 6mm | 750μm | 5mm | Lead Free | 6 | 14 Weeks | 24mOhm | 8 | EAR99 | No | 33W | SIZ904 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 9ns | 8 ns | 14 ns | 16A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20W 33W | 30A | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 12A 16A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SH8M31GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-sh8m31gzetb-datasheets-0493.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 4.5A | 18A | 0.077Ohm | N and P-Channel | 500pF 2500pF @ 10V | 65m Ω @ 4.5A, 10V, 70m Ω @ 4.5A, 10V | 3V @ 1mA | 4.5A Ta | 7nC, 40nC @ 5V, 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C470NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-ntmfd5c470nlt1g-datasheets-0555.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3W Ta 24W Tc | 2 N-Channel (Dual) | 590pF @ 25V | 11.5m Ω @ 5A, 10V | 2.2V @ 20μA | 11A Ta 36A Tc | 9nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5852NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5852nlt1g-datasheets-0509.pdf | 8-PowerTDFN | 6.1mm | 1.05mm | 5.1mm | Lead Free | 6 | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | 3.2W | FLAT | 8 | Dual | 3.2W | 2 | FET General Purpose Power | R-PDSO-F6 | 12 ns | 27 ns | 15A | 20V | SILICON | DRAIN | 40V | METAL-OXIDE SEMICONDUCTOR | 44A | 40V | 2 N-Channel (Dual) | 1800pF @ 25V | 6.9m Ω @ 20A, 10V | 2.4V @ 250μA | 36nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| NVMFD5853NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5853nt1g-datasheets-0546.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 3.1W | 8 | FET General Purpose Powers | 9 ns | 20ns | 3 ns | 21 ns | 12A | 20V | 40V | METAL-OXIDE SEMICONDUCTOR | 53A | 2 N-Channel (Dual) | 1225pF @ 25V | 10m Ω @ 15A, 10V | 4V @ 250μA | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| EPC2110 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2110engrt-datasheets-7777.pdf | Die | 14 Weeks | Die | 120V | 2 N-Channel (Dual) Common Source | 80pF @ 60V | 60mOhm @ 4A, 5V | 2.5V @ 700μA | 3.4A | 0.8nC @ 5V | GaNFET (Gallium Nitride) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4922BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4922bdyt1e3-datasheets-5484.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4922 | 8 | 2 | Dual | 30 | 2W | 2 | 13 ns | 53ns | 54 ns | 68 ns | 8A | 12V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 8A | 2 N-Channel (Dual) | 2070pF @ 15V | 1.8 V | 16m Ω @ 5A, 10V | 1.8V @ 250μA | 62nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| HP8MA2TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-hp8ma2tb1-datasheets-0514.pdf | 8-PowerTDFN | 6 | 16 Weeks | EAR99 | not_compliant | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3W Ta | 48A | 0.0165Ohm | 11 mJ | N and P-Channel | 1100pF 1250pF @ 15V | 9.6m Ω @ 18A, 10V, 17.9m Ω @ 15A, 10V | 2.5V @ 1mA | 18A Ta 15A Ta | 22nC, 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SH8K37GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-sh8k37gzetb-datasheets-0416.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 1.4W Ta | 5.5A | 18A | 0.066Ohm | 4.7 mJ | 2 N-Channel (Dual) | 500pF @ 30V | 46m Ω @ 5.5A, 10V | 2.7V @ 100μA | 5.5A Ta | 9.7nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ202EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj202ept1ge3-datasheets-0335.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 60A | 12V | 27W 48W | 2 N-Channel (Dual) | 975pF @ 6V | 6.5m Ω @ 15A, 10V | 2V @ 250μA | 20A 60A | 22nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4949EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2017 | /files/vishaysiliconix-sq4949eyt1ge3-datasheets-0472.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 1 | 8-SOIC | 7 ns | 9ns | 8 ns | 28 ns | 7.5A | 20V | 30V | 3.3W | 2 P-Channel (Dual) | 1020pF @ 25V | 35mOhm @ 5.9A, 10V | 2.5V @ 250μA | 7.5A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87384M | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 5-LGA | 5mm | 3.5mm | Lead Free | 5 | 12 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | 400μm | EAR99 | Gold | e4 | 8W | BOTTOM | NO LEAD | 260 | CSD87384 | NOT SPECIFIED | 2 | FET General Purpose Power | 95A | 30A | SILICON | COMPLEX | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1 | 30A | 0.0089Ohm | 2 N-Channel (Half Bridge) | 1150pF @ 15V | 7.7m Ω @ 25A, 8V | 1.9V @ 250μA | 9.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SIZ988DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-siz988dtt1ge3-datasheets-0357.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® | 30V | 20.2W 40W | 2 N-Channel (Dual) | 1000pF @ 15V 2425pF @ 15V | 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 40A Tc 60A Tc | 10.5nC @ 4.5V, 23.1nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ350DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz350dtt1ge3-datasheets-0321.pdf | 8-PowerWDFN | 14 Weeks | 8-Power33 (3x3) | 30V | 3.7W Ta 16.7W Tc | 2 N-Channel (Dual) | 940pF @ 15V | 6.75mOhm @ 15A, 10V | 2.4V @ 250μA | 18.5A Ta 30A Tc | 20.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UT6K30TCR | ROHM Semiconductor | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-ut6k30tcr-datasheets-0131.pdf | 8-PowerUDFN | 6 | 16 Weeks | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 3A | 12A | 0.223Ohm | 1.3 mJ | 2 N-Channel (Dual) | 110pF @ 30V | 153m Ω @ 3A, 10V | 2.7V @ 50μA | 3A Ta | 2.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| UT6JA3TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerUDFN | 6 | 16 Weeks | EAR99 | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 5A | 12A | 0.059Ohm | 4 mJ | 2 P-Channel (Dual) | 460pF @ 10V | 59m Ω @ 5A, 4.5V | 1.5V @ 1mA | 5A Ta | 6.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| TSM300NB06DCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm300nb06dcrrlg-datasheets-0361.pdf | 8-PowerTDFN | 4 Weeks | 8-PDFN (5x6) | 60V | 2W Ta 40W Tc | 2 N-Channel (Dual) | 1079pF @ 30V | 30mOhm @ 6A, 10V | 4.5V @ 250μA | 6A Ta 25A Tc | 17nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HP8K24TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-hp8k24tb-datasheets-0380.pdf | 8-PowerTDFN | 6 | 16 Weeks | EAR99 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3W Ta | 15A | 60A | 0.0133Ohm | 16.5 mJ | 2 N-Channel (Dual) | 590pF 2410pF @ 15V | 8.8m Ω @ 15A, 10V, 3m Ω @ 26A, 10V | 2.5V @ 1mA | 15A Ta 27A Tc 26A Ta 80A Tc | 10nC, 36nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SH8M51GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1.4W Ta | 3A | 12A | 0.19Ohm | N and P-Channel | 610pF 1550pF @ 25V | 170m Ω @ 3A, 10V, 290m Ω @ 2.5A, 10V | 2.5V @ 1mA | 3A Ta 2.5A Ta | 8.5nC, 12.5nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4011SPD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmth4011spd13-datasheets-0100.pdf | 8-PowerTDFN | 19 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.6W Ta | 2 N-Channel (Dual) | 805pF @ 20V | 15m Ω @ 20A, 10V | 4V @ 250μA | 11.1A Ta 42A Tc | 10.6nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0923NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0923ndiatma1-datasheets-0298.pdf | 8-PowerTDFN | 18 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | 1W | NOT SPECIFIED | NOT SPECIFIED | 2.5W | 2 | 32A | 20V | 30V | 2 N-Channel (Dual) Asymmetrical | 1160pF @ 15V | 5m Ω @ 20A, 10V | 2V @ 250μA | 17A 32A | 10nC @ 4.5V | Logic Level Gate, 4.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8J5TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/rohm-qs8j5tr-datasheets-0536.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | 8 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 600mW | 260 | 8 | 2 | 10 | 2 | Other Transistors | 9 ns | 40ns | 55 ns | 90 ns | 5A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 5A | 0.039Ohm | 2 P-Channel (Dual) | 1100pF @ 10V | 39m Ω @ 5A, 10V | 2.5V @ 1mA | 19nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SH8KA1GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-sh8ka1gzetb-datasheets-0020.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 12A | 0.08Ohm | 1.1 mJ | 2 N-Channel (Dual) | 125pf @ 15V | 80m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A Ta | 3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5875NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfd5875nlt1g-datasheets-0265.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | 3.2W | 7A | 60V | 3.2W | 2 N-Channel (Dual) | 540pF @ 25V | 33m Ω @ 7.5A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM250NB06DCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm250nb06dcrrlg-datasheets-0325.pdf | 8-PowerTDFN | 4 Weeks | 8-PDFN (5x6) | 60V | 2W Ta 48W Tc | 2 N-Channel (Dual) | 1461pF @ 30V | 25mOhm @ 7A, 10V | 4V @ 250μA | 7A Ta 30A Tc | 22nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ998DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2017 | /files/vishaysiliconix-siz998dtt1ge3-datasheets-0405.pdf | 8-PowerWDFN | 14 Weeks | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 20V | 30V | 20.2W 32.9W | 2 N-Channel (Dual), Schottky | 930pF @ 15V 2620pF @ 15V | 6.7m Ω @ 15A, 10V, 2.8m Ω @ 19A, 10V | 2.2V @ 250μA | 20A Tc 60A Tc | 8.1nC @ 4.5V, 19.8nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM110NB04DCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm110nb04dcrrlg-datasheets-0333.pdf | 8-PowerTDFN | 4 Weeks | 8-PDFN (5x6) | 40V | 2W Ta 48W Tc | 2 N-Channel (Dual) | 1506pF @ 20V | 11mOhm @ 10A, 10V | 4V @ 250μA | 10A Ta 48A Tc | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ980DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-siz980dtt1ge3-datasheets-0423.pdf | 8-PowerWDFN | 6 | 14 Weeks | EAR99 | unknown | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 20W 66W | 20A | 90A | 0.0067Ohm | 11.2 mJ | 2 N-Channel (Dual), Schottky | 930pF @ 15V 4600pF @ 15V | 6.7m Ω @ 15A, 10V, 1.6m Ω @ 19A, 10V | 2.2V @ 250μA | 20A Tc 60A Tc | 8.1nC @ 4.5V, 35nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SI7972DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si7972dpt1ge3-datasheets-0329.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 22W | 2 N-Channel (Dual) | 1050pF @ 30V | 18m Ω @ 11A, 10V | 2.7V @ 250μA | 8A Tc | 11nC @ 4.5V | Standard |
