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ContactFDPC8016S
FDPC8016S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDPC8016S
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 1550
- Description: FDPC8016S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 207.7333mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 42W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| Power - Max | 2.1W 2.3W |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2375pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 20A 35A |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Rise Time | 4ns |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 100A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 75A |
| Avalanche Energy Rating (Eas) | 73 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 750μm |
| Length | 5.1mm |
| Width | 6.1mm |
| RoHS Status | ROHS3 Compliant |
FDPC8016S Description
In a dual package, this device contains two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDPC8016S Features
Maximum RDS(on) at VGS = 10 V, ID = 35 A is 1.4 m.
? Maximum RDS(on) at VGS = 4.5 V, ID = 32 A is 1.7 m.
? Reduced Rise/Fall Times Due to Low Inductance Packaging Lead to Lower Switching Losses
? Optimal Layout for Lower Circuit Inductance and Reduced Switch Node Ringing is Made Possible by MOSFET Integration
? These devices are RoHS compliant and Pb-free.
FDPC8016S Applications
? Computer
? Interactions
? Multi-Use Point of Load
