SIZ904DT-T1-GE3

MOSFET 30V 12/16A 20/33W 24/13.5mOhms @ 10V


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIZ904DT-T1-GE3
  • Package: 6-PowerPair™
  • Datasheet: pdf
  • Stock: 2158
  • Description: MOSFET 30V 12/16A 20/33W 24/13.5mOhms @ 10V(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerPair™
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 24mOhm
Subcategory FET General Purpose Power
Max Power Dissipation 33W
Base Part Number SIZ904
JESD-30 Code R-PDSO-N6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 20W 33W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A 16A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 9ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 6mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.