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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| TT8J13TCR | ROHM Semiconductor | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-tt8j13tcr-datasheets-1593.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | yes | EAR99 | 1W | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | Other Transistors | R-PDSO-F8 | 2.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 1W | 5A | 0.062Ohm | 2 P-Channel (Dual) | 2000pF @ 6V | 62m Ω @ 2.5A, 4.5V | 1V @ 1mA | 16nC @ 4.5V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002V | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-2n7002v-datasheets-1455.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 11 Weeks | 32mg | No SVHC | 7.5Ohm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 250mW | FLAT | Dual | 250mW | 2 | FET General Purpose Power | 5.85 ns | 12.5 ns | 280mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.76V | 7 pF | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 1.76 V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| DMC1015UPD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmc1015upd13-datasheets-0854.pdf | 8-PowerTDFN | 17 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 2.3W | NOT SPECIFIED | NOT SPECIFIED | 6.9A | 12V | N and P-Channel | 1495pF @ 6V | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 9.5A 6.9A | 15.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM6K31GT2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/rohmsemiconductor-em6k31t2r-datasheets-1247.pdf | SOT-563, SOT-666 | 16 Weeks | 120mW | 250mA | 60V | 120mW | 2 N-Channel (Dual) | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA928DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia928djt1ge3-datasheets-1484.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | No SVHC | 6 | EAR99 | PowerPAK SC70-6L Dual | 7.8W | NOT SPECIFIED | NOT SPECIFIED | 4.5A | 30V | 2.2V | 2 N-Channel (Dual) | 490pF @ 15V | 25m Ω @ 5A, 10V | 2.2V @ 250μA | 4.5A Tc | 4.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P40TU,LF | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | 2 P-Channel (Dual) | 120pF @ 15V | 226m Ω @ 1A, 10V | 2V @ 1mA | 1.4A Ta | 2.9nC @ 10V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDG6332C-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdg6332cf085-datasheets-1394.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 42 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | YES | DUAL | GULL WING | NOT SPECIFIED | 2 | NOT SPECIFIED | 300mW | 2 | Other Transistors | Not Qualified | 150°C | R-PDSO-G6 | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.7A | 0.3Ohm | N and P-Channel | 113pF @ 10V | 300m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 700mA 600mA | 1.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMC3730UFL3-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmc3730ufl37-datasheets-1512.pdf | 6-XFDFN Exposed Pad | 14 Weeks | 6 | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 390mW | NOT SPECIFIED | NOT SPECIFIED | 1.1A | 30V | N and P-Channel Complementary | 65.9pF @ 25V | 460m Ω @ 200mA, 4.5V | 950mV @ 250μA | 1.1A 700mA | 0.9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1029X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1029xt1ge3-datasheets-1515.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | No SVHC | 4Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1029 | 6 | Dual | 40 | 250mW | 2 | Other Transistors | 150°C | 305mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.305A | 60V | N and P-Channel | 30pF @ 25V | 1.4 Ω @ 500mA, 10V | 2.5V @ 250μA | 305mA 190mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI1965DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1965dht1e3-datasheets-1509.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 390MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1965 | 6 | Dual | 40 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 27 ns | 15 ns | 1.14A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 2 P-Channel (Dual) | 120pF @ 6V | 390m Ω @ 1A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| MCCD2007-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/microcommercialco-mccd2007tp-datasheets-1477.pdf | 6-WFDFN Exposed Pad | 12 Weeks | yes | 260 | 10 | 20V | 2 N-Channel (Dual) Common Drain | 1150pF @ 10V | 20m Ω @ 7A, 10V | 1V @ 250μA | 7A | 15nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTM763200LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/panasonicelectroniccomponents-mtm763200lbf-datasheets-1533.pdf | 6-SMD, Flat Leads | 2mm | 600μm | 1.7mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | e6 | TIN BISMUTH | 700mW | NOT SPECIFIED | MTM76320 | Dual | NOT SPECIFIED | 700mW | 2 | 1.2A | 10V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.9A | 0.105Ohm | N and P-Channel | 280pF @ 10V | 850 mV | 105m Ω @ 1A, 4V | 1.3V @ 1mA | 1.9A 1.2A | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| MCCD2005-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/microcommercialco-mccd2005tp-datasheets-1494.pdf | 6-WFDFN Exposed Pad | 12 Weeks | yes | 260 | 10 | 20V | 2 N-Channel (Dual) Common Drain | 1800pF @ 10V | 13m Ω @ 8A, 10V | 1V @ 250μA | 8A | 17.9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG1016VQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmg1016vq7-datasheets-1415.pdf | SOT-563, SOT-666 | 600μm | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | 530mW | NOT SPECIFIED | 2 | NOT SPECIFIED | 530mW | 150°C | 5.1 ns | 640mA | 6V | 20V | N and P-Channel | 60.67pF @ 16V | 400m Ω @ 600mA, 4.5V | 1V @ 250μA | 870mA 640mA | 0.74nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDG6321C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdg6321c-datasheets-1549.pdf | 500mA | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 450mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | 300mW | GULL WING | Dual | 300mW | 2 | Other Transistors | 150°C | 8ns | 8 ns | 55 ns | 500mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 800mV | 0.5A | 25V | N and P-Channel | 50pF @ 10V | 450m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 500mA 410mA | 2.3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| AO4629 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 8 | yes | EAR99 | No | 2W | DUAL | GULL WING | 8 | 2W | 2 | 5.5A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6A | 0.03Ohm | 50 pF | N and P-Channel, Common Drain | 310pF @ 15V | 30m Ω @ 6A, 10V | 2.4V @ 250μA | 6A 5.5A | 6.3nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMP56D0UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp56d0uv7-datasheets-1418.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 16 Weeks | 3.005049mg | No SVHC | 6 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 400mW | FLAT | 260 | Dual | 30 | 400mW | 2 | Other Transistors | 4.46 ns | 6.63ns | 15 ns | 21.9 ns | 160mA | 8V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | 6Ohm | -50V | 2 P-Channel (Dual) | 50.54pF @ 25V | 6 Ω @ 100mA, 4V | 1.2V @ 250μA | 0.58nC @ 4V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| PMDXB600UNELZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmdxb600unelz-datasheets-0962.pdf | 6-XFDFN Exposed Pad | 6 | 4 Weeks | IEC-60134 | 380mW | NO LEAD | 6 | 2 | R-PDSO-N6 | 600mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 380mW | 0.6A | 0.62Ohm | 2 N-Channel (Dual) | 21.3pF @ 10V | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 0.7nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4200DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4200dyt1ge3-datasheets-0744.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 13 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | 8 | 2 | Dual | 30 | 2W | 2 | 10ns | 8 ns | 7.3A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.8W | 8A | 25V | 2 N-Channel (Dual) | 415pF @ 13V | 25m Ω @ 7.3A, 10V | 2.2V @ 250μA | 8A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI1023CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1023cxt1ge3-datasheets-1220.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 220mW | FLAT | 260 | 6 | 30 | 220mW | 2 | Other Transistors | 9 ns | 10ns | 8 ns | 10 ns | 450mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.45A | 1.038Ohm | 2 P-Channel (Dual) | 45pF @ 10V | 756m Ω @ 350mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| EFC4619R-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/onsemiconductor-efc4619rtr-datasheets-1235.pdf | 4-XFBGA, FCBGA | Lead Free | 23 Weeks | 4 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | Halogen Free | 1.6W | FET General Purpose Power | 340 ns | 440ns | 22.4 μs | 24.4 μs | 6A | 12V | 24V | METAL-OXIDE SEMICONDUCTOR | 6A | 23mOhm | 2 N-Channel (Dual) | 21.7nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN32D2LV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn32d2lv7-datasheets-1061.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | 6 | 16 Weeks | 3.005049mg | No SVHC | yes | EAR99 | No | e3 | Matte Tin (Sn) | 400mW | FLAT | 260 | DMN32D2LV | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | R-PDSO-F6 | 400mA | 10V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.4A | 30V | 2 N-Channel (Dual) | 39pF @ 3V | 1.2 Ω @ 100mA, 4V | 1.2V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| DMN63D8LDWQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/diodesincorporated-dmn63d8ldwq7-datasheets-1175.pdf | 6-TSSOP, SC-88, SOT-363 | 15 Weeks | 300mW | SOT-363 | 22pF | 220mA | 30V | 300mW | 2 N-Channel (Dual) | 22pF @ 25V | 2.8Ohm @ 250mA, 10V | 1.5V @ 250μA | 220mA | 0.87nC @ 10V | Standard | 2.8 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM6K31T2R | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-em6k31t2r-datasheets-1247.pdf | SOT-563, SOT-666 | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 120mW | FLAT | 260 | *K31 | 6 | 2 | 10 | 2 | FET General Purpose Power | 3.5 ns | 5ns | 28 ns | 18 ns | 250mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 150mW | 60V | 2 N-Channel (Dual) | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SQ1912EH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq1912eht1ge3-datasheets-1230.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | EAR99 | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 0.8A | 0.28Ohm | 12 pF | 2 N-Channel (Dual) | 75pF @ 10V | 280m Ω @ 1.2A, 4.5V | 1.5V @ 250μA | 800mA Tc | 1.15nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P41FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | unknown | 150mW | SSM6P41 | 720mA | 20V | 150mW | 2 P-Channel (Dual) | 110pF @ 10V | 300m Ω @ 400mA, 4.5V | 1V @ 1mA | 1.76nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1016X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1016xt1ge3-datasheets-1326.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 700mOhm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | DUAL | FLAT | 260 | SI1016 | 6 | 40 | 250mW | 2 | Other Transistors | 485mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.485A | 20V | N and P-Channel | 700m Ω @ 600mA, 4.5V | 1V @ 250μA | 485mA 370mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| TT8M3TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-tt8m3tr-datasheets-1348.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | yes | EAR99 | e2 | TIN COPPER | 1W | DUAL | 260 | 8 | 10 | 2 | Other Transistors | Not Qualified | R-PDSO-F8 | 2.4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2.5A | 0.09Ohm | N and P-Channel | 260pF @ 10V | 72m Ω @ 2.5A, 4.5V | 1V @ 1mA | 2.5A 2.4A | 3.6nC @ 4.5V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||
| DMN62D0UT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 6-TSSOP, SC-88, SOT-363 | 14 Weeks | SOT-363 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L36FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 6 | 16 Weeks | unknown | 150mW | DUAL | FLAT | NOT SPECIFIED | SSM6L36 | NOT SPECIFIED | 2 | R-PDSO-F6 | 330mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.5A | 0.85Ohm | N and P-Channel | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA 330mA | 1.23nC @ 4V | Logic Level Gate |
