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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI5935CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5935cdct1e3-datasheets-1877.pdf | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 14 Weeks | 84.99187mg | No SVHC | 100MOhm | 8 | yes | EAR99 | Tin | No | e4 | Silver (Ag) | 3.1W | C BEND | 260 | SI5935 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 10 ns | 32ns | 6 ns | 25 ns | 3.1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 4A | 2 P-Channel (Dual) | 455pF @ 10V | 100m Ω @ 3.1A, 4.5V | 1V @ 250μA | 4A | 11nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||
| SI5935CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5935cdct1e3-datasheets-1877.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | C BEND | 260 | SI5935 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 10 ns | 32ns | 32 ns | 25 ns | 3.1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.1Ohm | -20V | 2 P-Channel (Dual) | 455pF @ 10V | 100m Ω @ 3.1A, 4.5V | 1V @ 250μA | 4A | 11nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||
| NTLJD3115PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntljd3115pt1g-datasheets-1885.pdf | -20V | -4.1A | 6-WDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 9 Weeks | 100MOhm | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 710mW | C BEND | 260 | NTLJD3115P | 6 | Dual | 40 | 1.5W | 2 | Other Transistors | 6 ns | 15ns | 15 ns | 19.8 ns | 3.3A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20V | 2 P-Channel (Dual) | 531pF @ 10V | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 2.3A | 6.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SP8K3TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8k3tb-datasheets-1889.pdf | 30V | 3.5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | Tin/Copper (Sn/Cu) | 2W | GULL WING | 260 | *K3 | 8 | 10 | 2 | FET General Purpose Power | Not Qualified | 10ns | 7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7A | 0.035Ohm | 2 N-Channel (Dual) | 600pF @ 10V | 24m Ω @ 7A, 10V | 2.5V @ 1mA | 11.8nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| MCQ4503-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/microcommercialco-mcq4503tp-datasheets-1916.pdf | 8-SOIC (0.154, 3.90mm Width) | 22 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.4W | N and P-Channel | 1380pF @ 25V | 36m Ω @ 6A, 10V | 3V @ 250μA | 6.3A 8.6A | 20nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8J11TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | yes | EAR99 | e2 | TIN COPPER | 550mW | 260 | 8 | 10 | 2 | Other Transistors | R-PDSO-F8 | 3.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 550mW | 12A | 0.043Ohm | 2 P-Channel (Dual) | 2600pF @ 6V | 43m Ω @ 3.5A, 4.5V | 1V @ 1mA | 22nC @ 4.5V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UT6MA2TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-ut6ma2tcr-datasheets-1958.pdf | 8-PowerUDFN | 6 | 16 Weeks | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 4A | 12A | 0.08Ohm | 6.4 mJ | N and P-Channel | 180pF 305pF @ 15V | 46m Ω @ 4A, 10V, 70m Ω @ 4A, 10V | 2.5V @ 1mA | 4A Ta | 4.3nC, 6.7nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UP0497900L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2004 | /files/panasonicelectroniccomponents-up0497900l-datasheets-1389.pdf | 100mA | SOT-563, SOT-666 | Lead Free | 125mW | SSMINI6-F1 | 100mA | 50V 30V | 125mW | N and P-Channel | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA | Logic Level Gate | 12 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOC2804 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | 4-XFDFN | 16 Weeks | 4 | 700mW | 4-AlphaDFN (1.57x1.57) | 700mW | 2 N-Channel (Dual) Common Drain | 9.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8657-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/onsemiconductor-ech8657tlh-datasheets-1978.pdf | 8-SMD, Flat Lead | Lead Free | 2 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 1.5W | 8 | Dual | 6 ns | 11ns | 9 ns | 17 ns | 4.5A | 20V | 35V | 2 N-Channel (Dual) | 230pF @ 20V | 59m Ω @ 2A, 10V | 4.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMRDM3575 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmrdm3575trpbfree-datasheets-1945.pdf | SOT-963 | 22 Weeks | YES | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.125W | 20V | METAL-OXIDE SEMICONDUCTOR | 125mW | 0.16A | N and P-Channel | 9pF @ 15V | 3 Ω @ 100mA, 4.5V | 1V @ 250μA | 160mA 140mA | 0.46nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| US6M1TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-us6m1tr-datasheets-1997.pdf | 1.4A | 6-SMD, Flat Leads | 2mm | 770μm | 1.7mm | Lead Free | 6 | 16 Weeks | No SVHC | 280MOhm | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 1W | 260 | 6M1 | 6 | Dual | 10 | 1W | 2 | Other Transistors | 8ns | 10 ns | 25 ns | 1A | -12V | 30V | SILICON | SWITCHING | N-CHANNEL | 30V 20V | METAL-OXIDE SEMICONDUCTOR | -20V | N and P-Channel | 70pF @ 10V | 2.5 V | 240m Ω @ 1.4A, 10V | 2.5V @ 1mA | 1.4A 1A | 2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| US6M2GTR | ROHM Semiconductor | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-us6m2gtr-datasheets-2048.pdf | 6-SMD, Flat Leads | 16 Weeks | 30V 20V | 1W | N and P-Channel | 80pF @ 10V 150pF @ 10V | 240m Ω @ 1.5A, 4.5V, 390m Ω @ 1A, 4.5V | 1.5V @ 1mA, 2V @ 1mA | 1.5A 1A | 2.2nC @ 4.5V, 2.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008CBKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008cbkv115-datasheets-1328.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | LOW THRESHOLD | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 500mW | 0.4A | N and P-Channel | 50pF @ 15V | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 400mA 220mA | 0.68nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6664-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/onsemiconductor-mch6664tlw-datasheets-1842.pdf | 6-SMD, Flat Leads | 2mm | 850μm | 1.6mm | Lead Free | 7 Weeks | 7.512624mg | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | 800mW | NOT SPECIFIED | Dual | NOT SPECIFIED | 800mW | 2 | 4 ns | 3.3ns | 5.4 ns | 12 ns | 1.5A | 20V | 30V | -2.6V | 2 P-Channel (Dual) | 82pF @ 10V | 325m Ω @ 800mA, 10V | 2.6V @ 1mA | 2.2nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMN61D8LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn61d8lvt7-datasheets-1664.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | 820mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 630mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 820mW | 0.63A | 2.4Ohm | 2 N-Channel (Dual) | 12.9pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N57NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 12 Weeks | 6 | unknown | 1W | Dual | 4A | 12V | 30V | 30V | 2 N-Channel (Dual) | 310pF @ 10V | 46m Ω @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EFC6605R-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-efc6605rtr-datasheets-1315.pdf | 6-SMD, No Lead | Lead Free | 7 Weeks | 65.99769mg | 6 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | 1.6W | 2 | FET General Purpose Power | 154 ns | 678ns | 60.8 μs | 44.4 μs | 10A | 10V | 20V | METAL-OXIDE SEMICONDUCTOR | 13.3mOhm | 2 N-Channel (Dual) | 19.8nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002BKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002bkv115-datasheets-1286.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 1.6Ohm | 6 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 350mW | FLAT | 260 | 6 | Dual | 40 | 525mW | 2 | 5 ns | 6ns | 7 ns | 12 ns | 340mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.34A | 60V | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 0.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| TT8K11TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-tt8k11tcr-datasheets-1639.pdf | 8-SMD, Flat Lead | 8 | 10 Weeks | EAR99 | not_compliant | 1W | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | 3A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1W | 3A | 0.109Ohm | 2 N-Channel (Dual) | 140pF @ 10V | 71m Ω @ 3A, 10V | 2.5V @ 1A | 2.5nC @ 5V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN61D8LVTQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn61d8lvtq7-datasheets-1657.pdf | SOT-23-6 Thin, TSOT-23-6 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | 820mW | NOT SPECIFIED | NOT SPECIFIED | 630mA | 60V | 820mW | 2 N-Channel (Dual) | 12.9pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3035LWN-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn3035lwn7-datasheets-1620.pdf | 8-PowerVDFN | 6 | 14 Weeks | 8 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 770mW | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | 5.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 770mW | 0.035Ohm | 2 N-Channel (Dual) | 399pF @ 15V | 35m Ω @ 4.8A, 10V | 2V @ 250μA | 9.9nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTGD3148NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-ntgd3148nt1g-datasheets-1634.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 15 Weeks | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | 900mW | GULL WING | NOT SPECIFIED | NTGD3148N | 6 | Dual | NOT SPECIFIED | 1.1W | 2 | FET General Purpose Power | Not Qualified | 11.2ns | 1.6 ns | 12.8 ns | 3A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 3A | 0.07Ohm | 20V | 2 N-Channel (Dual) | 300pF @ 10V | 70m Ω @ 3.5A, 4.5V | 1.5V @ 250μA | 3.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| FDG6335N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdg6335n-datasheets-1704.pdf | 20V | 700mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 300MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 300mW | GULL WING | Dual | 300mW | 2 | FET General Purpose Power | 150°C | 5 ns | 7ns | 7 ns | 9 ns | 700mA | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.1V | 0.7A | 20V | 2 N-Channel (Dual) | 113pF @ 10V | 300m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 1.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| CPH6636R-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-cph6636rtlw-datasheets-1661.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 7 Weeks | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | 900mW | 65 ns | 300ns | 98 μs | 22 μs | 6A | 12V | 24V | 24V | 2 N-Channel (Dual) Common Drain | 20m Ω @ 3A, 4.5V | 3nC @ 4.5V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2041LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmn2041lsd13-datasheets-1826.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 15 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.16W | GULL WING | 260 | DMN2041LSD | 8 | 40 | 1.16W | 2 | FET General Purpose Power | 4.69 ns | 13.19ns | 6.43 ns | 22.1 ns | 7.63A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 7.6A | 30A | 2 N-Channel (Dual) | 550pF @ 10V | 28m Ω @ 6A, 4.5V | 1.2V @ 250μA | 15.6nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| EMH2418R-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-emh2418rtlh-datasheets-1391.pdf | 8-SMD, Flat Lead | Lead Free | 9 Weeks | 8 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | 1.3W | NOT SPECIFIED | 2 | NOT SPECIFIED | 120 ns | 170ns | 22.6 μs | 17.5 μs | 9A | 12V | 24V | 2 N-Channel (Dual) Common Drain | 15m Ω @ 4A, 4.5V | 1.3V @ 1mA | 4.4nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2014LHAB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn2014lhab7-datasheets-1834.pdf | 6-UFDFN Exposed Pad | 3.05mm | 600μm | 2.05mm | 14 Weeks | 7 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 800mW | 260 | 30 | 6.9 ns | 15.5ns | 12 ns | 40.9 ns | 9.3A | 12V | 20V | 2 N-Channel (Dual) Common Drain | 1550pF @ 10V | 13m Ω @ 4A, 4.5V | 1.1V @ 250μA | 9A | 16nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP210DUDJ-7 | Diodes Incorporated | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp210dudj7-datasheets-1582.pdf | SOT-963 | 6 | 19 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 330mW | FLAT | 260 | 6 | Dual | 40 | 330mW | 2 | Other Transistors | 7.7 ns | 19.3ns | 31.5 ns | 25.9 ns | 200mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.14A | 5Ohm | -20V | 2 P-Channel (Dual) | 27.44pF @ 15V | 5.5 Ω @ 100mA, 4.5V | 1.15V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| TT8J13TCR | ROHM Semiconductor | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-tt8j13tcr-datasheets-1593.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | yes | EAR99 | 1W | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | Other Transistors | R-PDSO-F8 | 2.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 1W | 5A | 0.062Ohm | 2 P-Channel (Dual) | 2000pF @ 6V | 62m Ω @ 2.5A, 4.5V | 1V @ 1mA | 16nC @ 4.5V | Logic Level Gate, 1.5V Drive |
