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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DMP2200UDW-13 | Diodes Incorporated | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp2200udw13-datasheets-0928.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | 450mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 900mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 450mW | 0.9A | 0.26Ohm | 2 P-Channel (Dual) | 184pF @ 10V | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 2.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN3AM832TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-zxmn3am832ta-datasheets-0984.pdf | 30V | 3A | 3mm | 1mm | 2mm | Lead Free | 8 | 299.994654mg | 120mOhm | 8 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | 1.13W | DUAL | FLAT | 260 | 10 | 2 | 40 | 3W | 2 | FET General Purpose Power | Not Qualified | 190pF | 1.7 ns | 2.3ns | 2.9 ns | 6.6 ns | 3.7A | 20V | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 180mOhm | 30V | 120 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTJD4152PT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntjd4152pt1g-datasheets-3403.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 11 Weeks | EAR99 | e3 | Tin (Sn) | YES | 272mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 880mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 272mW | 0.88A | 0.26Ohm | 2 P-Channel (Dual) | 155pF @ 20V | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 2.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4822SSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmg4822ssdq13-datasheets-0118.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.42W Ta | 2 N-Channel (Dual) | 478.9pF @ 16V | 21m Ω @ 8.5A, 10V | 3V @ 250μA | 10A Ta | 5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EFC4626R-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-efc4626rtr-datasheets-0919.pdf | 4-XFBGA | Lead Free | 10 Weeks | 4 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 1.4W | NOT SPECIFIED | 2 | NOT SPECIFIED | FET General Purpose Power | 20 ns | 350ns | 38.4 μs | 22 μs | 10V | 24V | METAL-OXIDE SEMICONDUCTOR | 5A | 37.5mOhm | 2 N-Channel (Dual) Common Drain | 7.5nC @ 4.5V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf916dtt1ge3-datasheets-0522.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.4W Ta 26.6W Tc 4W Ta 60W Tc | 2 N-Channel (Dual) | 1060pF @ 15V 4320pF @ 15V | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 23A Ta 40A Tc | 22nC @ 10V, 95nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002BFE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 1.6mm | 550μm | 1.2mm | 16 Weeks | 150mW | 2 | 200mA | 10V | 60V | 60V | 2 N-Channel (Dual) | 17pF @ 25V | 2.1 Ω @ 500mA, 10V | 3.1V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002PV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002pv115-datasheets-0807.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 330mW | FLAT | 6 | 390mW | 2 | 3 ns | 4ns | 5 ns | 10 ns | 350mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 330mW | 0.35A | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 0.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1034CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1034cxt1ge3-datasheets-0871.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 6 | EAR99 | No | e3 | MATTE TIN | 220mW | FLAT | 260 | 6 | 30 | 220mW | 2 | FET General Purpose Power | 11 ns | 16ns | 11 ns | 26 ns | 610mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 43pF @ 10V | 396m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 2nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF23MR12W1M1B11BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | Not Applicable | ROHS3 Compliant | /files/infineontechnologies-df23mr12w1m1b11bpsa1-datasheets-0695.pdf | Module | 16 Weeks | 1200V | 20mW | 2 N-Channel (Dual) | 1840pF @ 800V | 45m Ω @ 25A, 15V (Typ) | 5.55V @ 10mA | 25A Tj | 62nC @ 15V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN5010VAK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn5l06vk7-datasheets-3385.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | 6 | 7 Weeks | 3.005049mg | No SVHC | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Powers | Not Qualified | 280mA | 12V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | 3Ohm | 5 pF | 50V | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 50mA, 5V | 1V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UT6J3TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2017 | 6-PowerUDFN | 10 Weeks | yes | 20V | 2W | 2 P-Channel (Dual) | 2000pF @ 10V | 85m Ω @ 3A, 4.5V | 1V @ 1mA | 3A | 8.5nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ348DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz348dtt1ge3-datasheets-0284.pdf | 8-PowerWDFN | 14 Weeks | 8-Power33 (3x3) | 30V | 3.7W Ta 16.7W Tc | 2 N-Channel (Dual) | 820pF @ 15V | 7.12mOhm @ 15A, 10V | 2.4V @ 250μA | 18A Ta 30A Tc | 18.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN63D0LT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-523-3 | 16 Weeks | 2.012816mg | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS1D2N03DSD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/onsemiconductor-fdms1d2n03dsd-datasheets-0618.pdf | 8-PowerWDFN | 23 Weeks | yes | not_compliant | e3 | Tin (Sn) | 30V | 2.1W Ta 26W Tc 2.3W Ta 42W Tc | 2 N-Channel (Dual) Asymmetrical | 1410pF @ 15V 4860pF @ 15V | 3.25m Ω @ 19A, 10V, 0.97m Ω @ 37A, 10V | 2.5V @ 320μA, 3V @ 1mA | 19A Ta 70A Tc 37A Ta 164A Tc | 33nC @ 10V, 117nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5852NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5852nlt1g-datasheets-0509.pdf | 8-PowerTDFN | Lead Free | 6 | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | 3.2W | FLAT | 8 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-F6 | 12 ns | 8ns | 5 ns | 27 ns | 44A | 20V | SILICON | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 15A | 2 N-Channel (Dual) | 1800pF @ 25V | 6.9m Ω @ 20A, 10V | 2.4V @ 250μA | 15A | 36nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SI1028X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1028xt1ge3-datasheets-0746.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.7mm | 6 | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 220mW | FLAT | Dual | 220mW | 2 | 8 ns | 9 ns | 480mA | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 2 N-Channel (Dual) | 16pF @ 15V | 650m Ω @ 500mA, 10V | 2.5V @ 250μA | 2nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4937EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/vishaysiliconix-sq4937eyt1ge3-datasheets-0291.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 1 | 8-SOIC | 6 ns | 8ns | 8 ns | 15 ns | 5A | 20V | 30V | 3.3W | 2 P-Channel (Dual) | 480pF @ 25V | 75mOhm @ 3.9A, 10V | 2.5V @ 250μA | 5A Tc | 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UP0487C00L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2004 | /files/panasonicelectroniccomponents-up0487c00l-datasheets-0728.pdf | 20V | 100mA | SOT-563, SOT-666 | Lead Free | 125mW | SSMINI6-F1 | 10pF | 100mA | 20V | 125mW | 2 N-Channel (Dual) | 10pF @ 3V | 4Ohm @ 10mA, 4V | 1.3V @ 50μA | 100mA | Logic Level Gate | 4 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD6H840NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-nvmfd6h840nlt1g-datasheets-0561.pdf | 8-PowerTDFN | 48 Weeks | yes | 80V | 2 N-Channel (Dual) | 2002pF @ 40V | 6.9m Ω @ 20A, 10V | 2V @ 96μA | 14A Ta 74A Tc | 32nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN5L06DMKQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn5l06dmkq7-datasheets-0653.pdf | SOT-23-6 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 400mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 305mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 400mW | 0.305A | 3Ohm | 5 pF | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 50mA, 5V | 1V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD86350Q5DT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | 1.5mm | ROHS3 Compliant | 8-PowerLDFN | 6mm | 5mm | 9 | 6 Weeks | yes | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | CSD86350 | SWITCHING REGULATOR | R-PDSO-N8 | 25V | 13W Ta | 12V | 22V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 2 N-Channel (Half Bridge) | 1870pF 4000pF @ 12.5V | 5m Ω @ 25A, 5V, 1.1m Ω @ 25A, 5V | 2.1V @ 250μA, 1.6V @ 250μA | 40A Ta | 10.7nC, 25nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002VA-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/diodesincorporated-2n7002va7-datasheets-0648.pdf | 60V | 280mA | SOT-563 | 1.6mm | 600μm | 1.2mm | Exempt | 6 | 8 Weeks | 3.005049mg | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 150mW | FLAT | 260 | 6 | 2 | Dual | 40 | 150mW | 2 | FET General Purpose Power | 50pF | 20 ns | 20 ns | 280mA | 20V | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 13.5Ohm | 5 pF | 7.5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C446NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2018 | /files/onsemiconductor-ntmfd5c446nlt1g-datasheets-0615.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.5W Ta 125W Tc | 2 N-Channel (Dual) | 3170pF @ 25V | 2.65m Ω @ 20A, 10V | 2.2V @ 90μA | 25A Ta 145A Tc | 54nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8J66FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 2 P-Channel (Dual) | 18.5m Ω @ 9A, 10V | 2.5V @ 1mA | 9A Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISF00DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf00dnt1ge3-datasheets-0434.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 30V | 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2700pF @ 15V | 5mOhm @ 10A, 10V | 2.1V @ 250μA | 60A Tc | 53nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC9430L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmc9430lf085-datasheets-0450.pdf | 8-PowerWDFN | 25 Weeks | 196mg | ACTIVE (Last Updated: 2 days ago) | yes | Dual | 40V | 11.4W | 2 N-Channel (Dual) | 984pF @ 20V | 8m Ω @ 12A, 10V | 3V @ 250μA | 12A | 22nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C680NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-ntmfd5c680nlt1g-datasheets-0533.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3W Ta 19W Tc | 2 N-Channel (Dual) | 350pF @ 25V | 28m Ω @ 5A, 10V | 2.2V @ 13μA | 7.5A Ta 26A Tc | 5nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDML7610S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdml7610s-datasheets-0485.pdf | 8-PowerWDFN | 3mm | 750μm | 4.5mm | 6 | 23 Weeks | 300mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Gold | No | 2.2W | Dual | 2.2W | 2 | FET General Purpose Power | R-PDSO-N6 | 31 ns | 17A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 800mW 900mW | 60A | 40A | 0.0075Ohm | 30V | 2 N-Channel (Dual) | 1750pF @ 15V | 1.8 V | 7.5m Ω @ 12A, 10V | 3V @ 250μA | 12A 17A | 28nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| TC6215TG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microchiptechnology-tc6215tgg-datasheets-0497.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.65mm | 3.8mm | 8 | 6 Weeks | 84.99187mg | 8 | EAR99 | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | TC621 | 2 | Dual | 40 | 2 | Not Qualified | 2.5 ns | 2.3ns | 11.3 ns | 17.2 ns | 36A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | 5Ohm | -150V | N and P-Channel | 120pF @ 25V | 4 Ω @ 2A, 10V | 2V @ 1mA | Standard |
