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VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
- Manufacturer: Vishay Siliconix
- NO: 880-SI1028X-T1-GE3
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 3686
- Description: VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V(Kg)
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| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 650m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Turn-Off Delay Time | 9 ns |
| Continuous Drain Current (ID) | 480mA |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 220mW |
| Terminal Form | FLAT |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 220mW |
| Turn On Delay Time | 8 ns |
| FET Type | 2 N-Channel (Dual) |
