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Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET
- Manufacturer: Vishay Siliconix
- NO: 880-SQ4532AEY-T1_GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9137
- Description: Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.3W |
| FET Type | N and P-Channel |
| Rds On (Max) @ Id, Vgs | 31m Ω @ 4.9A, 10V, 70m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 535pF @ 15V 528pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A Tc 5.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V, 10.2nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7.3A |
| Drain-source On Resistance-Max | 0.031Ohm |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 175°C |
| FET Feature | Standard |
| Feedback Cap-Max (Crss) | 53 pF |
| Height | 1.75mm |
| RoHS Status | RoHS Compliant |
