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ContactSI4532DY
SI4532DY datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SI4532DY
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 8002
- Description: SI4532DY datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Weight | 230.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 65MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 3.9A |
| Base Part Number | SI4532D |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 18 ns |
| Power - Max | 900mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 3.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A 3.5A |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Rise Time | 8ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 3.9A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Nominal Vgs | 3 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 16 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
SI4532DY Description
These double N-channel and P-channel enhanced mode power field effect transistors are produced using on Semiconductor's PRPROPRORT, high cell density, and DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
SI4532DY Features
N-Channel 3.9A, 30V.RDS(ON) = 0.065? @VGS = 10V
RDS(ON) = 0.095? @VGS = 4.5V.
P-Channel -3.5A,-30V.RDS(ON)= 0.085? @VGS = -10V
RDS(ON)= 0.190 ? @VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount
package.
SI4532DY Applications
laptop power management
other battery-powered circuits
