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FDS6898AZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6898AZ
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 8053
- Description: FDS6898AZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 14MOhm |
| Additional Feature | ESD PROTECTED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 9.4A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 10 ns |
| Power - Max | 900mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 14m Ω @ 9.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1821pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| Rise Time | 15ns |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 9.4A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDS6898AZ Description
These N-channel logic level MOSFET use Fairchild Semiconductor's advanced Powerlrannch process tailored to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6898AZ Features
·9.4A20 V Ros(ON)=14mΩ@Vgs=4.5V
Rps(on)=18mΩ@Vgs=2.5V
·Low gate charge(16 nC typical)
.ESD protection diode(note 3)
.High performance trench technology for extremely low RosON)
High power and current handling capability
FDS6898AZ Applications
low-voltage applications
battery-powered applications
