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FDS9953A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS9953A
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 1174
- Description: FDS9953A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 130MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | -2.9A |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 4.5 ns |
| Power - Max | 900mW |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 130m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 185pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 2 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 2.9mA |
| Threshold Voltage | -1.8V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 10A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.8 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDS9953A Description
This P-channel MOSFET is a rugged gate version of advanced PowerTritch technology. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS9953A Features
-2.9 A, -30 V
RDS(on) = 130 mΩ@ VGS = -10 V
RDS(on) = 200 mΩ @ VGS = -4.5 V
Low gate charge (2.5nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS9953A Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection
